A MEMS/NEMS actuator based on a phase change material is described in which the volumetric change observed when the phase change material changes from a crystalline phase to an amorphous phase is used to effectuate motion in the device. The phase change material may be changed from crystalline phase to amorphous phase by heating with a heater or by passing current directly through the phase change material, and thereafter quenched quickly by dissipating heat into a substrate. The phase change material may be changed from the amorphous phase to a crystalline phase by heating at a lower temperature. An application of the actuator is described to fabricate a phase change nano relay in which the volumetric expansion of the actuator is used to push a contact across an airgap to bring it into contact with a source/drain.

A microelectromechanical device, in particular a non-volatile memory module or a relay, comprising: a mobile body including a top region and a bottom region; top electrodes facing the top region; and bottom electrodes, facing the bottom region. The mobile body is, in a resting condition, at a distance from the electrodes. The latter can be biased for generating a movement of the mobile body for causing a direct contact of the top region with the top electrodes and, in a different operating condition, a direct contact of the bottom region with the bottom electrodes. In the absence of biasing, molecular-attraction forces maintain in stable mutual contact the top region and the top electrodes or, alternatively, the bottom region and the bottom electrodes.

Amorphous tungsten nitride compounds, products, and methods of manufacture, as well as devices incorporating the same are disclosed herein. An example electro-mechanical device includes a first gate, a first drain, and a source having a completely amorphous metal tungsten nitride film cantilever. The cantilever extends from an anchor of the source transversely to the first gate and the first drain.

An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale electromechanical switch features a semiconducting cantilever that extends from a portion of the substrate into a cavity. The cantilever flexes in response to a voltage applied to the transistor gate thus forming a conducting channel underneath the gate. When the device is off, the cantilever returns to its resting position. Such motion of the cantilever breaks the circuit, restoring a void underneath the gate that blocks current flow, thus solving the problem of leakage. Fabrication of the nano-electromechanical switch is compatible with existing CMOS transistor fabrication processes. By doping the cantilever and using a back bias and a metallic cantilever tip, sensitivity of the switch can be further improved. A footprint of the nano-electromechanical switch can be as small as 0.10.1 m.sup.2.

A microelectromechanical device, in particular a non-volatile memory module or a relay, comprising: a mobile body including a top region and a bottom region; top electrodes facing the top region; and bottom electrodes, facing the bottom region. The mobile body is, in a resting condition, at a distance from the electrodes. The latter can be biased for generating a movement of the mobile body for causing a direct contact of the top region with the top electrodes and, in a different operating condition, a direct contact of the bottom region with the bottom electrodes. In the absence of biasing, molecular-attraction forces maintain in stable mutual contact the top region and the top electrodes or, alternatively, the bottom region and the bottom electrodes.

Techniques, systems, and devices are described for implementing for implementing computation devices and artificial neurons based on nanoelectromechanical (NEMS) systems. In one aspect, a nanoelectromechanical system (NEMS) based computing element includes: a substrate; two electrodes configured as a first beam structure and a second beam structure positioned in close proximity with each other without contact, wherein the first beam structure is fixed to the substrate and the second beam structure is attached to the substrate while being free to bend under electrostatic force. The first beam structure is kept at a constant voltage while the other voltage varies based on an input signal applied to the NEMS based computing element.

There is disclosed a device and method for fabricating such a device. The device includes cavities formed in a substrate. A laminated membrane is mounted to the substrate and spans the cavities. The laminated membrane includes a layer of a flexible material, typically a polymer, and a layer of a two-dimensional material that is typically graphene.

Convergent nanofabrication and nanoassembly methods are disclosed. Molecules and/or nanostructures are bound to supported binding tools and manipulated to bond together in desired locations and orientations to yield desired precise structures. Methods for precise fabrication of materials including diamond, graphene, nanotube, -SiC (and precise modifications thereof, e.g. color centers for quantum computation and information processing and storage), halite structured materials including MgO, MgS, TiC, VN, ScN, precisely Mn doped ScN, NbN, HfC, TaC, Hf.sub.xTa.sub.yC, and metals, and graphenoid structures for photovoltaic devices are disclosed. Systems disclosed performing these methods can fabricate systems with similar capabilities, enabling allo- or self-replication, and have capabilities including: conversion and storage of energy; obtainment and processing of matter from abundant environmental sources including on other planets and fabrication of desired articles using same; converting wind power (esp. high altitude wind) to electricity with concurrent capture of CO.sub.2 and conversion thereof to useful feedstocks e.g. by reaction with CH.sub.4 from oceanic methane clathrates; growth of algae crops including food. Fabrication of arbitrarily long carbon nanotubes enable construction of orbital elevators.

Nanoelectromechanical systems (NEMS) devices/switches and methods for implementing and fabricating the same with conducting contacts are provided. A nanoelectromechanical system (NEMS) switch can include a substrate; a source cantilever formed over the substrate and configured to move relative to the substrate; a drain electrode and at least one gate electrode formed over the substrate; wherein the source cantilever, drain and gate electrodes comprises a metal layer affixed to a support layer, at least a portion of the metal layer at the contact area extending past the support layer; and an interlayer sandwiched between the support layer and substrate.

A device structure includes a two-dimensional array of memory cells embedded in a memory-level dielectric layer and overlying a substrate; first access lines electrically connected to a respective row of memory cells within the two-dimensional array; and a first decoder circuit including first cantilever nanoelectromechanical devices that overlie the two-dimensional array of memory cells, are embedded in upper dielectric material layers, and have output nodes that are electrically connected to a respective first access line selected from the first access lines.