RFID devices are provided for use in combination with a food item or other temperature-sensitive item. The RFID devices include an RFID chip and an antenna electrically coupled to the RFID chip, along with a temperature-sensitive member. The temperature-sensitive member is configured to be in a first condition below a selected temperature and a second condition above the selected temperature to signify that the RFID device and associated food item or other temperature-sensitive item have been exposed to a temperature above the selected temperature. The temperature-sensitive member may be incorporated into the antenna to render the antenna at least partially inoperative above the selected temperature. The temperature-sensitive member may instead be configured to exhibit different colors below and above the selected temperature, or a single RFID device may include both types of temperature-sensitive members. Such RFID devices may also incorporate tamper-resistant features and/or accommodate human- and/or machine-readable printed symbols.

A phase change material switch device is provided. The phase change material switch device includes a phase change material, a first electrode electrically coupled to the phase change material, and at least one heater thermally coupled to the phase change material. An equalization device is configured to provide an impedance coupling between the first electrode and the phase change material. The impedance coupling varies over the phase change material.

A phase change material switch device is provided. The phase change material switch device includes a phase change material, a first electrode electrically coupled to the phase change material, and at least one heater thermally coupled to the phase change material. An equalization device is configured to provide an impedance coupling between the first electrode and the phase change material. The impedance coupling varies over the phase change material.

The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

Zero power wireless sensors, devices, and systems are used for crop water content monitoring. The sensors consume no power while monitoring for the presence of dry crop conditions. Infrared reflectance from plants is measured and when selected spectral conditions are met, a circuit is closed, activating an alarm, an RFID tag, or a radio transmitter. The deployed sensors consume no power while monitoring, reducing or eliminating the need to change batteries.

The present disclosure relates to a technical field of cells, and discloses a protection device and a battery. The protection device includes: a first connecting member; a second connecting member; a first element; and an elastic sheet. When the elastic sheet has a temperature lower than a first temperature, the elastic sheet is connected to at least one of the first connecting member and the second connecting member; when the temperature of the elastic sheet is equal to the first temperature, the elastic sheet is deformed to allow the first connecting member, the second connecting member, the elastic sheet and the first element to form a series circuit. When the protection device is not triggered, the temperature of the elastic sheet is lower than the first temperature, and the elastic sheet is connected to at least one of the first connecting member and the second connecting member.

The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

A linear detector element includes an outer sheath having a first end and a second end, one or more shape memory responsive elements within the outer sheath and between the first end and the second end and first and second conductive wires passing through at least a portion of the outer sheath and through the one or more shape memory responsive elements. The one more shape memory responsive elements include a shape memory actuator surrounding the first and second conductive wires and that has an expanded size and a contracted size and that is sized and arranged such that when the shape memory actuator is in the contracted state the first and second conductive wires contact one another and when the shape memory actuator is in the expanded state the first and second conductive wires do not contact one another.

A temperature-dependent switch comprises a first stationary contact, a second stationary contact, and a temperature-dependent switching mechanism having a movable contact member. In its first switching position, the switching mechanism presses the contact member against the first contact and thereby produces an electrically conductive connection between the two contacts. In its second switching position, the switching mechanism keeps the contact member spaced apart from the first contact. The temperature-dependent switching mechanism further comprises first and second temperature-dependent snap-action parts which switch from geometric low-temperature configurations to geometric high-temperature configurations when exceeding first and second switching temperatures, respectively, and switch back when subsequently falling below first and second reset temperatures, respectively. Switching the first and/or the second snap-action part from its geometric low-temperature configuration to its geometric high-temperature configuration brings the switching mechanism from its first switching position to its second switching position.