An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductors. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Methods of forming a microelectromechanical device are disclosed. In some embodiments, a first layer is deposited on a backplane having at least two electrodes. One or more electrical contacts over the first layer are formed. Forming the one or more electrical contacts includes: depositing a first ruthenium layer over the first layer, depositing a titanium nitride layer over the first ruthenium layer, depositing a second ruthenium layer over the titanium nitride layer, etching the second ruthenium layer with a first etchant, etching the titanium nitride layer with a second etchant different than the first etchant; and etching the first ruthenium layer with the first etchant. Additionally, a beam is formed above one or more electrical contacts, the beam being spaced from the one or more electrical contacts and a top electrode is formed above the beam. A seal layer above the beam to enclose the beam in a cavity.

The disclosure is directed to microelectromechanical system (MEMS) switches with multiple pull-down electrodes between terminal electrodes to limit off-state capacitance. In exemplary aspects disclosed herein, a plurality of pull-down electrodes are positioned between the input terminal electrode and the output terminal electrode. The plurality of pull-down electrodes are offset from each other to limit off-state capacitance between the input terminal electrode and the output terminal electrode. The separation between the pull-down electrodes disrupts the off-state capacitive path between the input terminal electrode and the output terminal electrode, thereby further insulating the contacts from each other. Limiting off-state capacitance reduces on-state electrical loss and increases off-state electrical isolation for improved performance.

A switch in an electronic device includes a substrate, a first signal line, a second signal line, and a ground bridge. The first signal line is on the substrate and extends in a first direction. The second signal line is on the substrate and is spaced apart from the first signal line in a first direction parallel with the first signal line to branch the wireless communication signal at a first point and a second point of the first signal line. The ground bridge is at least partially movable in a space between the first signal line and the second signal line. A first capacitor is between a first point of the first signal line and one end of the second signal line, and a second capacitor is between a second point of the first signal line and the other end of the second signal line.

A microelectromechanical system (MEMS) switch includes a movable beam suspended over a first set of conductive contacts and a second set of conductive contacts. Actuation of the MEMS switch occurs in two stages. During actuation of the MEMS switch, the movable beam is brought into contact with the first set of conductive contacts in a first stage of actuation. A first conduction path is created when the movable beam contacts the first set of conductive contacts. Continued actuation of the MEMS switch causes the movable beam to contact the second set of conductive contacts in a second stage of actuation. A second conduction path is created when the movable beam contacts the second set of conductive contacts.

Various embodiments of the teachings herein include an electronic module. The module may include: an electrical circuit; a first MEMS switch having a first control contact with a first switching threshold voltage; and a second MEMS switch having a second control contact with a second switching threshold voltage different than the first. The first control contact and the second MEMS switch are linked to the electrical circuit.

The present invention includes a method of creating electrical air gap low loss low cost RF mechanically and thermally stabilized interdigitated resonate filter in photo definable glass ceramic substrate. Where a ground plane may be used to adjacent to or below the RF filter in order to prevent parasitic electronic signals, RF signals, differential voltage build up and floating grounds from disrupting and degrading the performance of isolated electronic devices by the fabrication of electrical isolation and ground plane structures on a photo-definable glass substrate.

A method of manufacturing a MEMS device, wherein the MEMS device has a cavity in which a beam will move to change the capacitance of the device. After most of the device build-up has occurred, sacrificial material is removed to free the beam within the MEMS device cavity. Thereafter, exposed ruthenium contacts are etched back with an etchant comprising chlorine to remove the top surface of both the top and bottom contacts. Due to this etch back process, low contact resistance can be achieved with less susceptibility to stiction events. Stiction performance can be further improved by conditioning the ruthenium contacts in a fluorine based plasma. The fluorine based plasma process, or fluorine treatment, can be performed prior to or after etch-back process of the ruthenium contacts.

A method of manufacturing a MEMS device. The MEMS device has a cavity in which a beam will move to change the capacitance of the device. After most of the device build-up has occurred, sacrificial material is removed to free the beam within the MEMS device cavity. Thereafter, exposed ruthenium contacts are exposed to fluorine to either: dope exposed ruthenium and reduce surface adhesive forces, form fluorinated Self-Assembled Monolayers on the exposed ruthenium surfaces, deposit a nanometer passivating film on exposed ruthenium, or alter surface roughness of the ruthenium. Due to the fluorine treatment, low resistance, durable contacts are present, and the contacts are less susceptible to stiction events.