A wiring module to be attached to a plurality of power elements which store or generate power includes a bus bar connecting the power elements to each other or connecting the power element and a load to each other, an abnormality detection element detecting an abnormality of the power element, and an insulating protector holding the bus bar and the abnormality detection element. The insulating protector is integrally provided with a first holding shaft portion and a second holding shaft portion which position and hold the bus bar by fitting the bus bar there onto, and an element holding portion which position and hold the abnormality detection element by fitting the abnormality detection element there into.

A circuit breaker system is provided; the circuit breaker system comprises of a transformer, a capacitor, a pulse generator, a EBWF fuse and a VCB, the circuit breaker system can interrupt rated load current, overload current, surge load current and short-circuit load current within 100 microseconds. The on-state voltage drop of the circuit breaker system is below 0.1V. The circuit breaker system interrupts load current by injecting a non-resonant pulse current to reduce the current between the contacts of the VCB, and circuit breaker system interrupts higher load current by detonating the EBWF fuse to force an open-circuit. The EBWF fuse comprises a detonator in the low terminal and a contacting bellows in the upper terminal. The EBWF fuse can be engaged and dis-engaged by a fuse holder system.

An electronic device includes an input, an output, a metal fuse, a resistor, a heat control transistor, and a heat controller. The metal fuse is coupled between the input and the output. The resistor is coupled between the metal fuse and the heat control transistor. The heat control transistor is coupled between the resistor and a reference terminal of the electronic device, and the heat controller is configured to control a heater current of the heat control transistor.

A circuit protection device including a positive temperature coefficient (PTC) device and a backup fuse electrically connected in series with one another, the backup fuse comprising a quantity of solder disposed on a dielectric chip and having a melting temperature that is higher than a trip temperature of the PTC device, wherein the a surface of the dielectric chip exhibits a de-wetting characteristic relative to the solder such that, when the solder is melted, the solder draws away from the surface to create a galvanic opening in the backup fuse.

A circuit breaker device includes a bimetallic overcurrent protection element which is configured to be placed in series with an integrated replaceable fuse. The replaceable fuse may be faster-acting than the bimetallic overcurrent protection element, and may be higher-rated than the bimetallic overcurrent protection element. The circuit breaker device may include an electrically isolated terminal stud having a height sufficient to retain the replaceable fuse thereon, the electrically isolated terminal stud not directly connected to the bimetallic overcurrent protection element, so that current can only flow through the bimetallic overcurrent protection element when a replaceable fuse comprising an intact fuse element is supported on the electrically isolated terminal stud.

In examples, a package comprises a semiconductor die having a device side and a bond pad on the device side, a conductive terminal exposed to an exterior of the package, and an electrical fuse. The electrical fuse comprises a conductive ball coupled to the bond pad, and a bond wire coupled to the conductive terminal. The bond wire is stitch-bonded to the conductive ball.

In examples, a package comprises a semiconductor die having a device side and a bond pad on the device side, a conductive terminal exposed to an exterior of the package, and an electrical fuse. The electrical fuse comprises a conductive ball coupled to the bond pad, and a bond wire coupled to the conductive terminal. The bond wire is stitch-bonded to the conductive ball.

A circuit breaker system is provided; the circuit breaker system comprises of a transformer, a capacitor, a pulse generator, a EBWF fuse and a VCB, the circuit breaker system can interrupt rated load current, overload current, surge load current and short-circuit load current within 100 microseconds. The on-state voltage drop of the circuit breaker system is below 0.1V. The circuit breaker system interrupts load current by injecting a non-resonant pulse current to reduce the current between the contacts of the VCB, and circuit breaker system interrupts higher load current by detonating the EBWF fuse to force an open-circuit. The EBWF fuse comprises a detonator in the low terminal and a contacting bellows in the upper terminal. The EBWF fuse can be engaged and dis-engaged by a fuse holder system.

This description relates generally to semiconductor devices. A semiconductor device can include first and second conductive layers that can be positioned over a substrate, and at least one dielectric layer between the first and second conductive layers. The at least one dielectric layer can be positioned over at least a portion of the second conductive layer, and the first conductive layer can be positioned over a portion of the least one dielectric layer. The semiconductor device can further include a third conductive layer that can be positioned over the substrate and can be conductively connected to the second conductive layer and the substrate. The third conductive layer includes a fusible link.

A solid-state fuse device includes a switch a gate driver connected to the switch and configured to transition the switch from a closed state to an open state when at least one of an overcurrent measurement exceeds a predetermined overcurrent threshold or a voltage drop across the switch exceeds a predetermined saturation voltage threshold.