Disclosed embodiments include vacuum electronics devices and methods of fabricating a vacuum electronics device. In a non-limiting embodiment, a vacuum electronics device includes: an electrode; a first film layer disposed on the electrode about a periphery of the electrode; and a second film layer disposed on the first film layer, the second film layer including a plurality of electrically conductive grid lines patterned therein that are supported only at the periphery of the electrode by the first film layer.

A wire bonded triode for amplification of electromagnetic signals that includes an electron emitter (cathode), control grid, and an electron collector (anode) and having one or more wire bonded structures. A method of making a triode for amplification of electromagnetic signals that includes wirebonding one or more wires to form a wire bonded structure corresponding with one or more of an anode, grid and/or cathode element.

A wire bonded triode for amplification of electromagnetic signals that includes an electron emitter (cathode), control grid, and an electron collector (anode) and having one or more wire bonded structures. A method of making a triode for amplification of electromagnetic signals that includes wirebonding one or more wires to form a wire bonded structure corresponding with one or more of an anode, grid and/or cathode element.

A field emission cathode device and formation method involves a rotating field emission cathode including a field emission material deposited on a surface thereof, the field emission cathode rotating about an axis and being electrically connected to ground, and a planar gate electrode extending parallel to the surface of the rotating field emission cathode and defining a gap therebetween. A gate voltage source is electrically connected to the gate electrode and is arranged to interact therewith to generate an electric field, with the electric field inducing a portion of the surface of the rotating field emission cathode adjacent to the gate electrode to emit electrons from the field emission material toward and through the gate electrode.

A field emission cathode device and formation method involves a rotating field emission cathode including a field emission material deposited on a surface thereof, the field emission cathode rotating about an axis and being electrically connected to ground, and a planar gate electrode extending parallel to the surface of the rotating field emission cathode and defining a gap therebetween. A gate voltage source is electrically connected to the gate electrode and is arranged to interact therewith to generate an electric field, with the electric field inducing a portion of the surface of the rotating field emission cathode adjacent to the gate electrode to emit electrons from the field emission material toward and through the gate electrode.

Disclosed embodiments include vacuum electronics devices and methods of fabricating a vacuum electronics device. In a non-limiting embodiment, a vacuum electronics device includes: an electrode; a plurality of grid supports disposed on the electrode, each of the plurality of grid supports having a first width; and a plurality of grid lines, each of the plurality of grid lines being supported on an associated one of the plurality of grid supports, each of the plurality of grid lines having a second width that is wider than the first width.

Disclosed embodiments include vacuum electronics devices and methods of fabricating a vacuum electronics device. In a non-limiting embodiment, a vacuum electronics device includes: an electrode; a first film layer disposed on the electrode about a periphery of the electrode; and a second film layer disposed on the first film layer, the second film layer including a plurality of electrically conductive grid lines patterned therein that are supported only at the periphery of the electrode by the first film layer.

An ion filter used for an electron multiplier includes an insulating substrate; a first conductive layer formed on one main surface of the substrate; and a second conductive layer formed on another main surface of the substrate. The ion filter has a plurality of through-holes formed along a thickness direction of the substrate. The one main surface of the substrate is disposed at a downstream side in a moving direction of electrons in a chamber of the electron multiplier and the other main surface of the substrate is disposed at an upstream side in the moving direction of electrons in the chamber of the electron multiplier. A first thickness of the first conductive layer formed on the one main surface of the substrate is thicker than a second thickness of the second conductive layer on the other main surface of the substrate.

An ion filter used for an electron multiplier includes an insulating substrate; a first conductive layer formed on one main surface of the substrate; and a second conductive layer formed on another main surface of the substrate. The ion filter has a plurality of through-holes formed along a thickness direction of the substrate. The one main surface of the substrate is disposed at a downstream side in a moving direction of electrons in a chamber of the electron multiplier and the other main surface of the substrate is disposed at an upstream side in the moving direction of electrons in the chamber of the electron multiplier. A first thickness of the first conductive layer formed on the one main surface of the substrate is thicker than a second thickness of the second conductive layer on the other main surface of the substrate.

Some embodiments of vacuum electronics call for a grid that is fabricated in close proximity to an electrode, where, for example, the grid and electrode are separated by nanometers or microns. Methods and apparatus for fabricating a nanoscale vacuum grid and electrode structure are described herein.