A device and method for measuring amplitude of a scanning mirror are disclosed. The device includes a light source (20) for outputting an optical signal; a diaphragm (21) for modifying size and shape of a light spot of the optical signal output by the light source (20); a scanning mirror retainer for placing a scanning mirror (22) to be measured, the scanning mirror, after being retained, being able to periodically reflect the optical signal; a photoelectric sensor (23) including three or more sensing elements and configured to detect and collect the optical signal reflected by the scanning mirror (22); and a signal acquisition and processing unit (24) for processing a signal collected by the photoelectric sensor (23) to derive an amplitude of the scanning mirror (22). Therefore, it is possible to characterize the scanning mirror (22) before the scanning mirror (22) is used, determining performance of the scanning mirror (22).

The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate. The method comprising a process chamber being provided that is operatively connected to a plasma source. The substrate is provided on a substrate support that is provided within the process chamber. An electrical bias source is provided that is operatively connected to an aperture plate that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate. The method comprising a process chamber being provided that is operatively connected to a plasma source. The substrate is provided on a substrate support that is provided within the process chamber. An electrical bias source is provided that is operatively connected to an aperture plate that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

An ion guiding device includes ring electrodes with a same size disposed in parallel; wherein a connection line of centers of the ring electrodes is defined as an axis, a normal of a plane where any of the ring electrodes is located and a tangent line of the axis at a center of the ring electrode form an included angle being a range of (0, 90) degrees; a radio-frequency voltage source, for applying an out-phase radio-frequency voltage on a neighboring ring electrode along the axis, so that ions are confined inside the ring electrode during a transmission process; and a direct-current voltage source, applying a direct-current voltage with an amplitude changing along the axis on the ring electrode, so that the ions are transmitted along the axis and focused to a position closer to an inner surface of the ring electrode along a direction of the normal.

An ion guiding device includes ring electrodes with a same size disposed in parallel; wherein a connection line of centers of the ring electrodes is defined as an axis, a normal of a plane where any of the ring electrodes is located and a tangent line of the axis at a center of the ring electrode form an included angle being a range of (0, 90) degrees; a radio-frequency voltage source, for applying an out-phase radio-frequency voltage on a neighboring ring electrode along the axis, so that ions are confined inside the ring electrode during a transmission process; and a direct-current voltage source, applying a direct-current voltage with an amplitude changing along the axis on the ring electrode, so that the ions are transmitted along the axis and focused to a position closer to an inner surface of the ring electrode along a direction of the normal.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction and having a pitch. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The second column of openings has the pitch. A scan direction of the BAA is along a second direction, orthogonal to the first direction.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction and having a pitch. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The second column of openings has the pitch. A scan direction of the BAA is along a second direction, orthogonal to the first direction.

An electron gun includes: a cathode, which has a cathode holder and a cathode body; and a Wehnelt cylinder. The cathode holder receives the cathode body and the Wehnelt cylinder is suitable for bundling free electrons, which can escape from the cathode body toward the Wehnelt cylinder, to form an electron beam. The Wehnelt cylinder is interlockingly arranged, at least in some parts along a first inner surface facing the cathode holder, on an outer surface of the cathode holder and at least partly extends around the cathode holder.

Controlling total emission current of an electron emitting construct in an x-ray emitting device by providing a cathode, providing multiple active areas each active area having a gated cone electron source, including multiple emitter tips arranged in an array, a gate electrode, and a gate interconnect lead connected to the gate electrode, providing an x-ray emitting construct comprising an anode, the anode being an x-ray target, situating the x-ray emitting construct facing the active areas face each other, selecting a set of active areas, and activating selected active areas by conductively connecting a voltage source to their associated the gate electrode interconnect lead.

Controlling total emission current of an electron emitting construct in an x-ray emitting device by providing a cathode, providing multiple active areas each active area having a gated cone electron source, including multiple emitter tips arranged in an array, a gate electrode, and a gate interconnect lead connected to the gate electrode, providing an x-ray emitting construct comprising an anode, the anode being an x-ray target, situating the x-ray emitting construct facing the active areas face each other, selecting a set of active areas, and activating selected active areas by conductively connecting a voltage source to their associated the gate electrode interconnect lead.