H01J3/40

METHOD OF TESTING ELECTRODE CIRCUITRY OF A DEVICE FOR CONTROLLING TRAPPED IONS

A method of testing electrode circuitry of a device for controlling trapped ions is described. The method includes: applying a test voltage across a first terminal of the device and a second terminal of the device; and measuring a quantity indicative of a quality and/or an integrity of an electrical connection between the first terminal and the second terminal.

METHOD OF TESTING ELECTRODE CIRCUITRY OF A DEVICE FOR CONTROLLING TRAPPED IONS

A method of testing electrode circuitry of a device for controlling trapped ions is described. The method includes: applying a test voltage across a first terminal of the device and a second terminal of the device; and measuring a quantity indicative of a quality and/or an integrity of an electrical connection between the first terminal and the second terminal.

Particle transfer blocking device and lithography device using electron layer in vacuum system
12400822 · 2025-08-26 · ·

The present invention relates to a device designed to prevent fine particles produced in a vacuum system from being adsorbed to a semiconductor substrate and a sample or prevent the fine particles from being adsorbed to a mask in a lithography device using the vacuum system and, more specifically, to an extreme ultraviolet lithography device not using a membrane type pellicle. An embodiment of a particle transfer blocking device according to the present invention comprises: a vacuum chamber in which an accommodation part is formed; and a barrier module which is provided in the vacuum chamber and divides the accommodation part of the chamber into a first region and a second region, wherein the barrier module is not a physical barrier but an electrical potential barrier serving to prevent predetermined particles located in the first region from transferring to the second region.

Particle transfer blocking device and lithography device using electron layer in vacuum system
12400822 · 2025-08-26 · ·

The present invention relates to a device designed to prevent fine particles produced in a vacuum system from being adsorbed to a semiconductor substrate and a sample or prevent the fine particles from being adsorbed to a mask in a lithography device using the vacuum system and, more specifically, to an extreme ultraviolet lithography device not using a membrane type pellicle. An embodiment of a particle transfer blocking device according to the present invention comprises: a vacuum chamber in which an accommodation part is formed; and a barrier module which is provided in the vacuum chamber and divides the accommodation part of the chamber into a first region and a second region, wherein the barrier module is not a physical barrier but an electrical potential barrier serving to prevent predetermined particles located in the first region from transferring to the second region.

SYSTEM AND METHOD FOR IDENTIFYING, SELECTING AND PURIFYING PARTICLES
20250339819 · 2025-11-06 ·

A method for purifying particles generates charged particles from a sample, measures at least at least one of masses, charge magnitudes, and mobilities of the generated charged particles, and selectively passes to a collection surface of a particle collection target for collection on the collection surface each of the measured charged particles having at least one of (a) a measured mass equal to a selected mass or within a selected range of particle masses, (b) a measured charge magnitude equal to a selected charge magnitude or within a selected range of charge magnitudes, and (c) a measured mobility equal to a selected mobility or range of mobilities.

SYSTEM AND METHOD FOR IDENTIFYING, SELECTING AND PURIFYING PARTICLES
20250339819 · 2025-11-06 ·

A method for purifying particles generates charged particles from a sample, measures at least at least one of masses, charge magnitudes, and mobilities of the generated charged particles, and selectively passes to a collection surface of a particle collection target for collection on the collection surface each of the measured charged particles having at least one of (a) a measured mass equal to a selected mass or within a selected range of particle masses, (b) a measured charge magnitude equal to a selected charge magnitude or within a selected range of charge magnitudes, and (c) a measured mobility equal to a selected mobility or range of mobilities.

Ion guide electrode configurations for polarity-independent ion containment
12451315 · 2025-10-21 · ·

An ion guide includes a first arrangement of electrodes on a first surface, a second arrangement of electrodes on a second surface, and an ion containment space in a gap therebetween. The first arrangement includes first electrodes and second electrodes. Each first electrode includes a first main portion and a first edge portion. The first edge portion is wider than the first main portion. The second arrangement includes third electrodes and fourth electrodes. Each fourth electrode includes a fourth main portion and a fourth edge portion. The fourth edge portion is wider than the fourth main portion. The first edge portions are positioned opposite the fourth edge portions. The first electrodes and the third electrodes are configured to receive first RF voltages and the second electrodes and the fourth electrodes are configured to receive second RF voltages that are phase-shifted with respect to the first RF voltages.

Ion guide electrode configurations for polarity-independent ion containment
12451315 · 2025-10-21 · ·

An ion guide includes a first arrangement of electrodes on a first surface, a second arrangement of electrodes on a second surface, and an ion containment space in a gap therebetween. The first arrangement includes first electrodes and second electrodes. Each first electrode includes a first main portion and a first edge portion. The first edge portion is wider than the first main portion. The second arrangement includes third electrodes and fourth electrodes. Each fourth electrode includes a fourth main portion and a fourth edge portion. The fourth edge portion is wider than the fourth main portion. The first edge portions are positioned opposite the fourth edge portions. The first electrodes and the third electrodes are configured to receive first RF voltages and the second electrodes and the fourth electrodes are configured to receive second RF voltages that are phase-shifted with respect to the first RF voltages.

Mounted planar filament
12592355 · 2026-03-31 · ·

A filament assembly 10 for an x-ray tube 20 can include a planar filament 11 electrically-coupled between and substantially-encircled by a pair of collector plates C1 and C2. The pair of collector plates C1 and C2 can support the planar filament 11 so that it does not twist or warp and align the filament assembly 10 within a cathode cup 33. The pair of collector plates C1 and C2 can block electrons emitted from a back side of the filament. Without the collector plates C1 and C2, back side electrons can change direction by about 180, hit the target, and distort a target electron spot. Each collector plate C1 or C2 can include holes H1 and H2. These holes H1 and H2 can aid in alignment of the collector plates C1 and C2 with electrodes 31 and electrode 32, can allow welding at a lower temperature, and can facilitate weld inspection.

Mounted planar filament
12592355 · 2026-03-31 · ·

A filament assembly 10 for an x-ray tube 20 can include a planar filament 11 electrically-coupled between and substantially-encircled by a pair of collector plates C1 and C2. The pair of collector plates C1 and C2 can support the planar filament 11 so that it does not twist or warp and align the filament assembly 10 within a cathode cup 33. The pair of collector plates C1 and C2 can block electrons emitted from a back side of the filament. Without the collector plates C1 and C2, back side electrons can change direction by about 180, hit the target, and distort a target electron spot. Each collector plate C1 or C2 can include holes H1 and H2. These holes H1 and H2 can aid in alignment of the collector plates C1 and C2 with electrodes 31 and electrode 32, can allow welding at a lower temperature, and can facilitate weld inspection.