A vacuum transistor includes a substrate and a first terminal formed on the substrate. A piezoelectric element has a second terminal formed on the piezoelectric element, wherein the piezoelectric element is provided over the first terminal to provide a gap between the first terminal and the second terminal. The gap is adjusted in accordance with an electrical field on the piezoelectric element.

Disclosed embodiments include vacuum electronics devices and methods of fabricating a vacuum electronics device. In a non-limiting embodiment, a vacuum electronics device includes: an electrode; a plurality of grid supports disposed on the electrode, each of the plurality of grid supports having a first width; and a plurality of grid lines, each of the plurality of grid lines being supported on an associated one of the plurality of grid supports, each of the plurality of grid lines having a second width that is wider than the first width.

Disclosed embodiments include vacuum electronics devices and methods of fabricating a vacuum electronics device. In a non-limiting embodiment, a vacuum electronics device includes: an electrode; a plurality of grid supports disposed on the electrode, each of the plurality of grid supports having a first width; and a plurality of grid lines, each of the plurality of grid lines being supported on an associated one of the plurality of grid supports, each of the plurality of grid lines having a second width that is wider than the first width.

A vacuum transistor includes a substrate and a first terminal formed on the substrate. A piezoelectric element has a second terminal formed on the piezoelectric element, wherein the piezoelectric element is provided over the first terminal to provide a gap between the first terminal and the second terminal. The gap is adjusted in accordance with an electrical field on the piezoelectric element.

A vacuum transistor includes a substrate and a first terminal formed on the substrate. A piezoelectric element has a second terminal formed on the piezoelectric element, wherein the piezoelectric element is provided over the first terminal to provide a gap between the first terminal and the second terminal. The gap is adjusted in accordance with an electrical field on the piezoelectric element.

A vacuum transistor includes a substrate and a first terminal formed on the substrate. A piezoelectric element has a second terminal formed on the piezoelectric element, wherein the piezoelectric element is provided over the first terminal to provide a gap between the first terminal and the second terminal. The gap is adjusted in accordance with an electrical field on the piezoelectric element.

A vacuum transistor includes a substrate and a first terminal formed on the substrate. A piezoelectric element has a second terminal formed on the piezoelectric element, wherein the piezoelectric element is provided over the first terminal to provide a gap between the first terminal and the second terminal. The gap is adjusted in accordance with an electrical field on the piezoelectric element.

Disclosed embodiments include vacuum electronics devices and methods of fabricating a vacuum electronics device. In a non-limiting embodiment, a vacuum electronics device includes: an electrode; a plurality of grid supports disposed on the electrode, each of the plurality of grid supports having a first width; and a plurality of grid lines, each of the plurality of grid lines being supported on an associated one of the plurality of grid supports, each of the plurality of grid lines having a second width that is wider than the first width.

Disclosed embodiments include vacuum electronics devices and methods of fabricating a vacuum electronics device. In a non-limiting embodiment, a vacuum electronics device includes: an electrode; a plurality of grid supports disposed on the electrode, each of the plurality of grid supports having a first width; and a plurality of grid lines, each of the plurality of grid lines being supported on an associated one of the plurality of grid supports, each of the plurality of grid lines having a second width that is wider than the first width.

A laminated body is provided in a circumferential shape with a gap formed in a part of a circumferential direction on a semiconductor layer. In the laminated body, a first insulating layer, a gate layer, a second insulating layer, and a drain layer are layered in this order from the semiconductor layer side. An impurity diffusion layer is formed on a surface of the semiconductor layer, and a backside electrode on a backside surface. The impurity diffusion layer extends from a position in contact with side walls in a channel space to an outside of the laminated body through a region corresponding to the gap on the surface of the semiconductor layer. A portion of the impurity diffusion layer beyond the laminated body is a contact region to which a wiring for applying a predetermined voltage is connected. A cover layer made of an insulating material is formed in an upper portion and a periphery of the annular portion including the laminated body and the gap.