A field emitter array (FEA) vacuum transistor is disclosed which includes a substrate and a plurality of nanorods formed of a first polarity dopant on the substrate.

Disclosed is an x-ray tube including a hybrid electron emission source, which uses, as an electron emission source, a cathode including both a field electron emission source and a thermal electron emission source. An x-ray tube includes an electron emission source emitting an electron beam, and a target part including a target material that emits an x-ray as the emitted electron beam collides with the target part, wherein the electron emission source includes a thermal electron emission source and a field electron emission source, and emits the electron beam by selectively using at least one of the thermal electron emission source and the field electron emission source.

Disclosed is an x-ray tube including a hybrid electron emission source, which uses, as an electron emission source, a cathode including both a field electron emission source and a thermal electron emission source. An x-ray tube includes an electron emission source emitting an electron beam, and a target part including a target material that emits an x-ray as the emitted electron beam collides with the target part, wherein the electron emission source includes a thermal electron emission source and a field electron emission source, and emits the electron beam by selectively using at least one of the thermal electron emission source and the field electron emission source.

A field emitter array (FEA) vacuum transistor is disclosed which includes a substrate and a plurality of nanorods formed of a first polarity dopant on the substrate.

A field emitter array (FEA) vacuum transistor is disclosed which includes a substrate and a plurality of nanorods formed of a first polarity dopant on the substrate.

A vacuum tube for amplifier circuit includes: a light incidence window that transmits signal light; a photoelectric conversion unit that converts the signal light transmitted through the light incidence window into photoelectrons; an output unit that has an anode, on which the photoelectrons are incident, and outputs a signal corresponding to the incident photoelectrons; and a grid electrode that is disposed in a path of the photoelectrons from the photoelectric conversion unit to the anode and controls the amount of photoelectrons incident on the anode.

A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60 with respect to a perpendicular to the surface of device.

A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60 with respect to a perpendicular to the surface of device.

Disclosed is an x-ray tube including a hybrid electron emission source, which uses, as an electron emission source, a cathode including both a field electron emission source and a thermal electron emission source. An x-ray tube includes an electron emission source emitting an electron beam, and a target part including a target material that emits an x-ray as the emitted electron beam collides with the target part, wherein the electron emission source includes a thermal electron emission source and a field electron emission source, and emits the electron beam by selectively using at least one of the thermal electron emission source and the field electron emission source.

A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60 with respect to a perpendicular to the surface of device.