Patent classifications
H01J27/02
LIQUID METAL ION SOURCE
A liquid metal ion source, in particular an ion thruster for propulsion of a spacecraft, comprises a reservoir for the liquid metal, an emitter penetrating a front wall of the reservoir for drawing liquid metal from the reservoir and emitting ions of the liquid metal, and an extractor supported with respect to the reservoir and facing the emitter for extracting and accelerating the ions from the emitter, wherein the reservoir is provided with advancing means for creating an electromagnetic field within the liquid metal in the reservoir to exert a force on the liquid metal in a direction towards the emitter.
Ion gun and vacuum processing apparatus
An ion gun according to one embodiment of the present invention has an anode, a cathode having a first portion and a second portion that face the anode, and a magnet that creates a spatial magnetic field between the first portion and the second portion. An annular gap including a curved portion is provided between the first portion and the second portion of the cathode. The magnet creates lines of magnetic field having the bottom inside with respect to the sectional center line of the gap between the first portion and the second portion of the curved portion.
Variable thickness ion source extraction plate
An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.
Ion source with multiple bias electrodes
An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, and a repeller is near the second end. A generally U-shaped first bias electrode is on a first side of the extraction aperture within the chamber volume. A generally U-shaped second bias electrode is on a second side of the extraction aperture within the chamber volume, where the first and second bias electrodes are separated by a first distance proximate to the extraction aperture and a second distance distal from the extraction aperture. An electrode power supply provides a first and second positive voltage to the first and second bias electrodes, where the first and second positive voltages differ by a predetermined bias differential.
ION BEAM PROCESSING APPARATUS, ELECTRODE ASSEMBLY, AND METHOD OF CLEANING ELECTRODE ASSEMBLY
Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.
CHARGED PARTICLE BEAM SOURCE, SURFACE PROCESSING APPARATUS AND SURFACE PROCESSING METHOD
A charged particle beam source for a surface processing apparatus is disclosed. The charged particle beam source comprises: a plasma chamber; a plasma generation unit adapted to convert an input gas within the plasma chamber into a plasma containing charged particles; and a grid assembly adjacent an opening of the plasma chamber. The grid assembly comprises one or more grids each having a plurality of apertures therethrough, the one or more grids being electrically biased in use so as to accelerate charged particles from the plasma through the grid(s) to thereby output a charged particle beam, the major axis of which is substantially perpendicular to the plane of the grid assembly. The transmissivity of the or each grid to the charged particles is defined by the relative proportion of aperture area to non-aperture area, and at least one of the grids has a transmissivity which varies across the grid along a first direction, the transmissivity being lower adjacent a first extremity of the grid than adjacent a second extremity of the grid opposite the first extremity, the first direction lying parallel to the plane of the grid assembly, such that in use the charged particle beam output by the source has a non-uniform charged particle current density profile in a plane parallel to the plane of the grid assembly which varies along the first direction, the charged particle current density being lower adjacent a first edge of the beam than adjacent a second edge of the beam opposite the first edge.
APPARATUS AND METHOD FOR IONIZING AN ANALYTE, AND APPARATUS AND METHOD FOR ANALYZING AN IONIZED ANALYTE
The present invention discloses an ionization apparatus 10 for ionizing an analyte S, comprising an inlet E, an outlet A, a first electrode 1, a second electrode 2 and a dielectric element 3. The first electrode 1, the second electrode 2 and the dielectric element 3 are arranged relative to one another such that, by applying an electric voltage between the first electrode 1 and the second electrode 2, a dielectric barrier discharge is establishable in a discharge area 5 in the ionization apparatus 10. The first and second electrodes 1, 2 are arranged such that they are displaceable or movable relative to each other.
Dynamic electron impact ion source
An ion source can include a magnetic field generator configured to generate a magnetic field in a direction parallel to a direction of the electron beam and coincident with the electron beam. However, this magnetic field can also influence the path of ionized sample constituents as they pass through and exit the ion source. An ion source can include an electric field generator to compensate for this effect. As an example, the electric field generator can be configured to generate an electric field within the ion source chamber, such that an additional force is imparted on the ionized sample constituents, opposite in direction and substantially equal in magnitude to the force imparted on the ionized sample constituents by the magnetic field.
SYSTEMS, DEVICES, AND METHODS FOR ION BEAM MODULATION
Embodiments of systems, devices, and methods relate to an ion beam source system. An ion source is configured to provide a negative ion beam to a tandem accelerator system downstream of the ion source, and a modulator system connected to an extraction electrode of the ion source is configured to bias the extraction electrode for a duration sufficient to maintain acceleration voltage stability of the tandem accelerator system.
Apparatus and system including extraction optics having movable blockers
Disclosed herein are approaches for adjusting extraction slits of an extraction plate using a set of adjustable beam blockers. In one approach, an ion extraction optics may include an extraction plate including a first opening and a second opening, and a first beam blocker extending over the first opening and a second beam blocker extending over the second opening. Each of the first and second beam blockers may include an inner slit defined by a first distance between an inner edge and the extraction plate, and an outer slit defined by a second distance between an outer edge and the extraction plate, wherein the first and second beam blockers are movable to vary at least one of the first distance and the second distance. As a result, extraction through the inner and outer slits of ion beamlets characterized by similar mean angles may be achieved.