The present disclosure may provide a field emission device with an enhanced beam convergence. For this, the device may include a gate structure disposed between a cathode electrode and an anode electrode, wherein the gate structure includes a gate electrode and an atomic layer sheet disposed on the gate electrode, the gate electrode facing an emitter and having at least one aperture formed therein.

The present disclosure may provide a field emission device with an enhanced beam convergence. For this, the device may include a gate structure disposed between a cathode electrode and an anode electrode, wherein the gate structure includes a gate electrode and an atomic layer sheet disposed on the gate electrode, the gate electrode facing an emitter and having at least one aperture formed therein.

A field emission device is configured with a grid that includes nanotubes or nanowires. In one embodiment a cathode, an anode, and a nanotube or nanowire grid are responsive to inputs to produce a potential barrier between the grid and at least one of the cathode and the anode such that a set of electrons from the cathode can tunnel through the potential barrier to produce a net current at the anode.

A field emission device is configured with a grid that includes nanotubes or nanowires. In one embodiment a cathode, an anode, and a nanotube or nanowire grid are responsive to inputs to produce a potential barrier between the grid and at least one of the cathode and the anode such that a set of electrons from the cathode can tunnel through the potential barrier to produce a net current at the anode.