An image sensor has a photocathode window assembly, an anode assembly, and a malleable metal seal. The photocathode window assembly has a photocathode layer. The anode assembly includes a silicon substrate that has an electron sensitive surface. The malleable metal seal bonds the photocathode window assembly and the silicon substrate to each other. A vacuum gap separates the photocathode layer from the electron sensitive surface. A first electrical connection and a second electrical connection are for a voltage bias of the photocathode layer relative to the electron sensitive surface.

Aspects of the present disclosure describe an atomic oven including a cathode, an anode that comprises a source material, and a power supply that provides a voltage between the cathode and the anode, wherein applying the voltage causes multiple electrons from the cathode to ablate the source material from the anode or locally heat the anode to cause source material to evaporate from the anode and, in both case, to produce a stream of ablated or evaporated particles that passes through an opening in the cathode.

Aspects of the present disclosure describe an atomic oven including a cathode, an anode that comprises a source material, and a power supply that provides a voltage between the cathode and the anode, wherein applying the voltage causes multiple electrons from the cathode to ablate the source material from the anode or locally heat the anode to cause source material to evaporate from the anode and, in both case, to produce a stream of ablated or evaporated particles that passes through an opening in the cathode.

This electron emitting element includes a lower electrode, a surface electrode facing the lower electrode, a resistance layer arranged between the lower electrode and the surface electrode, and an insulating layer arranged between the lower electrode and the surface electrode. The resistance layer is an insulating resin layer containing conductive fine particles in a dispersed state. The insulating layer has a peripheral region for defining the electron emission region, and an emission control region which is arranged so as to overlap the electron emission region defined by the peripheral region. The emission control region is configured by a line-shaped insulating layer, a plurality of dot-shaped insulating layers, or both a line-shaped insulating layer and a plurality of dot-shaped insulating layers. The percentage of an area that the emission control region represents within an area of an electron emission region defined by the peripheral region is 2% or more and 60% or less.

This electron emitting element includes a lower electrode, a surface electrode facing the lower electrode, a resistance layer arranged between the lower electrode and the surface electrode, and an insulating layer arranged between the lower electrode and the surface electrode. The resistance layer is an insulating resin layer containing conductive fine particles in a dispersed state. The insulating layer has a peripheral region for defining the electron emission region, and an emission control region which is arranged so as to overlap the electron emission region defined by the peripheral region. The emission control region is configured by a line-shaped insulating layer, a plurality of dot-shaped insulating layers, or both a line-shaped insulating layer and a plurality of dot-shaped insulating layers. The percentage of an area that the emission control region represents within an area of an electron emission region defined by the peripheral region is 2% or more and 60% or less.

[Object] To provide an electron source that is lightweight, simple in configuration, and capable of suppressing characteristic degradation or recovering characteristics without causing an increase in power consumption. [Solving Means] A CNT electron source includes: a CNT emitter 32 for emitting electrons; a gate electrode 33 for extracting electrons from the CNT emitter 32; and a gate power supply connection switching relay 37a and a CNT emitter grounding switching relay 37b that cause the gate electrode 33 to emit electrons to irradiate the CNT emitter with electrons.

[Object] To provide an electron source that is lightweight, simple in configuration, and capable of suppressing characteristic degradation or recovering characteristics without causing an increase in power consumption. [Solving Means] A CNT electron source includes: a CNT emitter 32 for emitting electrons; a gate electrode 33 for extracting electrons from the CNT emitter 32; and a gate power supply connection switching relay 37a and a CNT emitter grounding switching relay 37b that cause the gate electrode 33 to emit electrons to irradiate the CNT emitter with electrons.

This electron emitting element includes a lower electrode, a surface electrode facing the lower electrode, a resistance layer arranged between the lower electrode and the surface electrode, and an insulating layer arranged between the lower electrode and the surface electrode. The resistance layer is an insulating resin layer containing conductive fine particles in a dispersed state. The insulating layer has a peripheral region for defining the electron emission region, and an emission control region which is arranged so as to overlap the electron emission region defined by the peripheral region. The emission control region is configured by a line-shaped insulating layer, a plurality of dot-shaped insulating layers, or both a line-shaped insulating layer and a plurality of dot-shaped insulating layers. The percentage of an area that the emission control region represents within an area of an electron emission region defined by the peripheral region is 2% or more and 60% or less.

This electron emitting element includes a lower electrode, a surface electrode facing the lower electrode, a resistance layer arranged between the lower electrode and the surface electrode, and an insulating layer arranged between the lower electrode and the surface electrode. The resistance layer is an insulating resin layer containing conductive fine particles in a dispersed state. The insulating layer has a peripheral region for defining the electron emission region, and an emission control region which is arranged so as to overlap the electron emission region defined by the peripheral region. The emission control region is configured by a line-shaped insulating layer, a plurality of dot-shaped insulating layers, or both a line-shaped insulating layer and a plurality of dot-shaped insulating layers. The percentage of an area that the emission control region represents within an area of an electron emission region defined by the peripheral region is 2% or more and 60% or less.

Aspects of the present disclosure describe an atomic oven including a cathode, an anode that comprises a source material, and a power supply that provides a voltage between the cathode and the anode, wherein applying the voltage causes multiple electrons from the cathode to ablate the source material from the anode or locally heat the anode to cause source material to evaporate from the anode and, in both case, to produce a stream of ablated or evaporated particles that passes through an opening in the cathode.