H01J37/02

MULTI-COLUMN SCANNING ELECTRON MICROSCOPY SYSTEM

A multi-column scanning electron microscopy (SEM) system includes a column assembly, where the column assembly includes a first substrate array assembly and at least a second substrate array assembly. The system also includes a source assembly, the source assembly including two or more illumination sources configured to generate two or more electron beams and two or more sets of a plurality of positioners configured to adjust a position of a particular illumination source of the two or more illumination sources in a plurality of directions. The system also includes a stage configured to secure a sample, where the column assembly directs at least a portion of the two or more electron beams onto a portion of the sample.

Method of controlling an implanter operating in plasma immersion

A method of controlling an implanter operating in plasma immersion, the method including the steps of: an implantation stage (1) during which the plasma AP is ignited and the substrate is negatively biased S; a neutralization stage (2) during which the plasma AP is ignited and the substrate has a positive or zero bias S applied thereto; a suppression stage (3) during which the plasma AP is extinguished; and an expulsion stage (4) for expelling negatively charged particles from the substrate and during which the plasma AP is extinguished. The method is remarkable in that the duration of the expulsion stage is longer than 5 s. The invention also provides a power supply for biasing an implanter.

INSPECTION METHOD AND INSPECTION APPARATUS
20210043417 · 2021-02-11 · ·

An inspection method of an embodiment includes: positively charging a substrate on which a pattern is formed by irradiating the substrate with a first electron beam; generating a secondary electron on a surface of the substrate by irradiating the substrate with a second electron beam; detecting the generated secondary electron; and inspecting the pattern based on the detected secondary electron, in which when the substrate is irradiated with the first electron beam, the first electron beam is made incident on the substrate at an incident angle different from an incident angle of the second electron beam with respect to the substrate, while positions of an emission source of the first electron beam and the substrate are being moved relatively.

CHARGED PARTICLE BEAM APPARATUS
20210066045 · 2021-03-04 · ·

A charged particle beam apparatus has a chamber configured to accommodate a sample with. An inside of the chamber is decompressed. A tube having an opening is disposed in the chamber, and introduces a mixed gas having a plurality of types of gases, in a direction towards the sample. A first beam generator emits a charged particle beam toward at least one of a region between an opening of the tube and the sample, or a region of the sample against which the mixed gas collides. A mixed gas generator provides the mixed gas to the tube. The opening of the tube has an elongated shape in a cross section in a direction substantially perpendicular to a flow direction of the mixed gas.

Radiation analysis apparatus

A radiation analysis apparatus includes an excitation source unit irradiating an object, for which the radiation analysis apparatus analyzes property or a structure, with a first radiation, a radiation detection unit including three or more radiation detectors that detect a second radiation generated from the object irradiated with the first radiation, a radiation focusing unit disposed between the object and the radiation detection unit, and focusing the second radiation, a position changing unit changing a relative positional relationship between the radiation focusing unit and the radiation detection unit, and a control unit controlling the position changing unit to change the positional relationship, based on first information which is stored in a storage unit and indicates an intensity distribution of the second radiation emitted from the radiation focusing unit and second information indicating a distribution based on a detection count of the second radiation detected by each of the radiation detectors.

Vehicle cabin inspection system and method
10900911 · 2021-01-26 · ·

An inspection system (100) having: a source (101) configured to generate inspection radiation (40); a collimator (103) configured to collimate the inspection radiation into an inspection beam (41) configured to irradiate a section of a vehicle (20); a filter (102) located between the source and the collimator, the filter having at least a cargo configuration and an attenuation configuration; and a controller (104) configured to control the configuration of the filter, such that the filter is in the cargo configuration when the inspection beam irradiates a container (23), and in the attenuation configuration when the inspection beam irradiates a cabin (21).

Charged-particle beam device

A charged-particle beam device wherein suppressing the effects of static build-up is compatible with executing high-throughput measurements and examination. The charged-particle beam device equipped with an electrostatic chuck (803), includes an electrometer (11) for measuring the electric potential of the electrostatic chuck, a charge removing device (805) for removing charge from the electrostatic chuck, and a control device (806) for controlling the charge removing device in such a manner that the charge removal by the charge removing device is executed after reaching a certain number of processed samples irradiated by the charged particle beam, or after a predetermined processing time. When the result of the electric potential measurement by the electrometer does not meet a predetermined condition, the control device executes at least one among increasing and decreasing the number processed or the processing time.

Processing apparatus and processing method
10896858 · 2021-01-19 · ·

Disclosed is a processing method for performing a processing corresponding to a processing gas in a plurality of processing containers which are connected to a gas supply source, and at least some of which have different lengths of pipes to the gas supply source. The processing method includes simultaneously supplying the processing gas from the gas supply source to the plurality of processing containers, and individually supplying the processing gas from the gas supply source to the plurality of processing containers or to some of the plurality of processing containers.

FLOOD COLUMN AND CHARGED PARTICLE APPARATUS

Disclosed herein is a flood column for projecting a charged particle flooding beam along a beam path towards a sample to flood the sample with charged particles prior to assessment of the flooded sample using an assessment column, the flood column comprising: an anchor body arranged along the beam path; a lens arrangement arranged in a down-beam part of the flood column; and a lens support arranged between the anchor body and the lens arrangement; wherein the lens support is configured to position the lens arrangement and the anchor body relative to each other; the lens support comprises an electrical insulator; and the lens support is in the direct line of sight of at least a portion of the beam path in the down-beam part.

Charged particle beam device

A charged particle beam device capable of removing a foreign matter adhered to an electric field-correcting electrode arranged in an outer peripheral portion of a measurement sample is provided. The invention is directed to a charged particle beam device including a sample stage provided with the measurement sample and an electric field-correcting electrode correcting an electric field in the vicinity of the outer peripheral portion of the measurement sample and in which the measurement sample is measured by being irradiated with a charged particle beam, wherein a foreign-matter removal control unit controls a power source connected to the electric field-correcting electrode such that an absolute value of a voltage to be applied to the electric field-correcting electrode is equal to or more than an absolute value of a voltage to be applied to the electric field-correcting electrode when the measurement sample is measured.