A method of preparing a sample for microstructure diagnostics on a sample body by material-ablating processing, and subsequently producing an examination region on the sample portion, the examination region including a target region to be examined, the method including producing a terracing zone including the target region on at least one surface of the sample portion, wherein at least one notch with flanks extending obliquely in relation to the surface is produced next to the target region by material-ablating beam processing to produce the terracing zone, and ablating material from the surface of the sample portion in the region of the terracing zone by an ion beam, which is radiated under grazing incidence onto the surface obliquely to the direction of extent of the notch such that the target region lies behind the notch in the incoming radiation direction of the ion beam and, as a result of the terracing in the region behind the notch, the surface is recessed substantially parallel to the original height of the surface by way of ion beam processing.

The present disclosure relates to an ion implantation amount adjustment device that includes: an adjuster configured to turn on or off an ion outlet of the ion implantation apparatus; and an actuator configured to control movement of the adjuster to adjust an opening degree of the ion outlet.

A charged particle beam system is disclosed, comprising: a charged particle beam generator for generating a beam of charged particles; a charged particle optical column arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; a source for providing a cleaning agent; a conduit connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element;
wherein the charged particle optical element comprises: a charged particle transmitting aperture for transmitting and/or influencing the beam of charged particles, and at least one vent hole for providing a flow path between a first side and a second side of the charged particle optical element,
wherein the vent hole has a cross section which is larger than a cross section of the charged particle transmitting aperture.

Further, a method for preventing or removing contamination in the charged particle transmitting apertures is disclosed, comprising the step of introducing the cleaning agent while the beam generator is active.

A charged particle beam system is disclosed, comprising: a charged particle beam generator for generating a beam of charged particles; a charged particle optical column arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; a source for providing a cleaning agent; a conduit connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element;
wherein the charged particle optical element comprises: a charged particle transmitting aperture for transmitting and/or influencing the beam of charged particles, and at least one vent hole for providing a flow path between a first side and a second side of the charged particle optical element,
wherein the vent hole has a cross section which is larger than a cross section of the charged particle transmitting aperture.

Further, a method for preventing or removing contamination in the charged particle transmitting apertures is disclosed, comprising the step of introducing the cleaning agent while the beam generator is active.

Disclosed herein is a method comprising: depositing a first amount of electric charges into a region of a sample, during a first time period; depositing a second amount of electric charges into the region, during a second time period; while scanning a probe spot generated on the sample by a beam of charged particles, recording from the probe spot signals representing interactions of the beam of charged particles and the sample; wherein an average rate of deposition during the first time period and an average rate of deposition during the second time period are different.

The present invention provides a semiconductor evaluation device for fabricating a suitable reference pattern utilized in comparison tests. The semiconductor evaluation device and computer program extract a process window in a more accurate range based on a two-dimensional evaluation of the pattern. In order to achieve the above described objects, the present invention includes a semiconductor evaluation device that measures the dimensions of the pattern formed over the sample based on a signal obtained by way of a charged particle beam device, selects a pattern whose dimensional measurement results satisfy specified conditions or exposure conditions when the pattern is formed, and forms synthesized contour data, by synthesizing contour data obtained from images of an identically shaped pattern in design data, and also a pattern formed under the selected exposure conditions or a pattern having a positional relation that is already known relative to the selected pattern.

The present invention provides a semiconductor evaluation device for fabricating a suitable reference pattern utilized in comparison tests. The semiconductor evaluation device and computer program extract a process window in a more accurate range based on a two-dimensional evaluation of the pattern. In order to achieve the above described objects, the present invention includes a semiconductor evaluation device that measures the dimensions of the pattern formed over the sample based on a signal obtained by way of a charged particle beam device, selects a pattern whose dimensional measurement results satisfy specified conditions or exposure conditions when the pattern is formed, and forms synthesized contour data, by synthesizing contour data obtained from images of an identically shaped pattern in design data, and also a pattern formed under the selected exposure conditions or a pattern having a positional relation that is already known relative to the selected pattern.

There is provided an ion source device including a pair of first electrodes for emitting an electron, a second electrode that defines a region in which the electron is enclosed and to which raw material source gas is supplied, between the pair of first electrodes, and that has a hole portion through which an ion generated by collision between the electron and the material gas is extruded, an extraction electrode disposed apart from the second electrode along an extraction direction of the ion extracted from the second electrode so that a potential difference is formed between the second electrode and the extraction electrode, and an intermediate electrode disposed between the second electrode and the extraction electrode. A first potential difference between the second electrode and the intermediate electrode is greater than a second potential difference between the second electrode and the extraction electrode.

To provide a charged particle beam apparatus. The charged particle beam apparatus includes: a stage on which a sample is placed; a cleaner configured to remove a contaminant on the sample; and a stage control unit configured to adjust a relative positional relationship between the cleaner and the sample by moving the stage during use of the cleaner.

The present invention relates to a surface treatment apparatus for cleaning or treating (micro etching, etc.) a surface of a TEM sample (substrate) by converting plasma ions into a neutral beam and a separator including an RF cathode connected to an RF supply unit and accelerating ions by self bias is disposed between a plasma generating chamber and a neutral chamber and the ions generated in the plasma generating chamber are converted into a neutral beam through a separator and accelerated and irradiated to a neutral chamber to enable surface treatment without damaging a sample.