There is provided a charged particle beam system in which a detector can be placed in an appropriate analysis position. The charged particle beam system (100) includes: a charged particle source (11) for producing charged particles; a sample holder (20) for holding a sample (S); a detector (40) for detecting, in the analysis position, a signal produced from the sample (S) by impingement of the charged particles on the sample (S); a drive mechanism (42) for moving the detector (40) into the analysis position; and a controller (52) for controlling the drive mechanism (42). The controller (52) performs the steps of: obtaining information about the type of the sample holder (20); determining the analysis position on the basis of the obtained information about the type of the sample holder (20); and controlling the drive mechanism (42) to move the detector (40) into the determined analysis position.

A charged particle beam device capable of removing a foreign matter adhered to an electric field-correcting electrode arranged in an outer peripheral portion of a measurement sample is provided. The invention is directed to a charged particle beam device including a sample stage provided with the measurement sample and an electric field-correcting electrode correcting an electric field in the vicinity of the outer peripheral portion of the measurement sample and in which the measurement sample is measured by being irradiated with a charged particle beam, wherein a foreign-matter removal control unit controls a power source connected to the electric field-correcting electrode such that an absolute value of a voltage to be applied to the electric field-correcting electrode is equal to or more than an absolute value of a voltage to be applied to the electric field-correcting electrode when the measurement sample is measured.

A charged particle beam specimen inspection system is described. The system includes an emitter for emitting at least one charged particle beam, a specimen support table configured for supporting the specimen, an objective lens for focusing the at least one charged particle beam, a charge control electrode provided between the objective lens and the specimen support table, wherein the charge control electrode has at least one aperture opening for the at least one charged particle beam, and a flood gun configured to emit further charged particles for charging of the specimen, wherein the charge control electrode has a flood gun aperture opening.

A workpiece mounting system comprising a chuck and a base is disclosed. The emissivity of the base is increased to allow more heat transfer from the chuck to the base. In some embodiments, the emissivity of the base may be controllable so that for ion beams with lower power levels, the emissivity remains low, enabling the chuck to reach the desired temperature quickly. For ion beams with higher power levels, the emissivity may increase to allow more heat transfer to the base, allowing the chuck to maintain the desired temperature. High emissivity coatings may be applied to the top surface of the base. In other embodiments, a set of movable shields may be disposed between the chuck and the base. The position of the shields may be a function of the power level of the incoming ion beam.

A non-invasive semiconductor technique for measuring dielectric/semiconductor interface trap density can be performed by charging the dielectric by creating charges on the top surface of the dielectric layer over the wafer using Scanning Electron Microscope (SEM) charging. This charging can induce an accumulated, a depleted and/or an inverted semiconductor surface. The states of the semiconductor surface can subsequently be measured, identified, and/or quantified using Electric Field Induced Second Harmonic generation (EFISH). From the measured/acquired EFISH versus SEM charge curve, the interface state density (D.sub.it) can be extracted. A large working distance provides the ability to create charge and measure the Second Harmonic Generation (SHG) at the same semiconductor surface spot without the needing to move the wafer.

Surface imaging apparatuses, surface analysis apparatuses, methods based on detection of secondary electrons or secondary ions that include a spatially scanned and DC or pulsed primary excitation source resulting in secondary electrons or secondary ions which are detected and provide the modulated signal for imaging of the sample; and dual polarity flood beams to effect neutralization of surface charge and surface potential variation.

The purpose of the present invention is to provide a charged particle beam device that can specify irradiation conditions for primary charged particles that can obtain a desired charged state without adjusting the acceleration voltage. The charged particle beam device according to the present invention specifies the irradiation conditions for a charged particle beam in which the charged state of a sample is switched between a positive charge and a negative charge, and adjusts the irradiation conditions according to the relationship between the specified irradiation conditions and the irradiation conditions when an observation image of the sample has been acquired (see FIG. 8).

A method of operating a particle beam system comprises determining values of operating parameters of the particle beam system, and operating the particle beam system with the determined values of the operating parameters, and also recording a particle-microscopic image of a sample via the particle beam system. The operating parameters can represent at least a magnitude of a flow of a gas fed to the sample for charge compensation, a current of a particle beam directed at the sample for recording the image, a kinetic energy of the particles of the particle beam upon impinging on the sample, a scanning speed of the particle beam over the sample for recording the image, and a magnification of the recorded image.

Support arrangement for supporting a radiation projection system in a substrate processing apparatus, the support arrangement comprising: a support body for supporting the radiation projection system; electrical wiring for supplying voltages to components within the radiation projection system and/or for supplying control data for modulation of radiation to be projected onto a target surface by the radiation projection system; optical fibers, for supplying control data for modulation of radiation to be projected onto a target surface by the radiation projection system, and a cooling arrangement comprising one or more fluid conduits for cooling the radiation projection system; the electrical wiring, the optical fibers, and the cooling arrangement being at least partly accommodated in and/or supported by the support body.

Support arrangement for supporting a radiation projection system in a substrate processing apparatus, the support arrangement comprising: a support body for supporting the radiation projection system; electrical wiring for supplying voltages to components within the radiation projection system and/or for supplying control data for modulation of radiation to be projected onto a target surface by the radiation projection system; optical fibers, for supplying control data for modulation of radiation to be projected onto a target surface by the radiation projection system, and a cooling arrangement comprising one or more fluid conduits for cooling the radiation projection system; the electrical wiring, the optical fibers, and the cooling arrangement being at least partly accommodated in and/or supported by the support body.