Patent classifications
H01J37/02
Reentrant Gas System for Charged Particle Microscope
Disclosed herein are apparatuses and systems for reentrant fluid delivery techniques. An example system includes at least a fluid delivery conduit extending between first and second electrical potentials, wherein the fluid delivery conduit is formed into a tilted helical so that a fluid flowing through the fluid delivery conduit experiences an electric field reversal through each winding of the fluid delivery conduit.
Reentrant Gas System for Charged Particle Microscope
Disclosed herein are apparatuses and systems for reentrant fluid delivery techniques. An example system includes at least a fluid delivery conduit extending between first and second electrical potentials, wherein the fluid delivery conduit is formed into a tilted helical so that a fluid flowing through the fluid delivery conduit experiences an electric field reversal through each winding of the fluid delivery conduit.
WAFER EDGE INSPECTION OF CHARGED PARTICLE INSPECTION SYSTEM
An improved system is disclosed for wafer outer portion inspection in a charged particle beam system, such as a scanning electron microscope (SEM). The system uses multiple conductive rings around the wafer to correct an e-field distortion occurring at the wafer outer portion. The rings are applied with different complimentary voltages in order achieve a precise compensation of the e-field distortion.
Systems and methods of hysteresis compensation
To compensate for hysteresis in an actuator, a path between a first position and a second position can be selected, and a drive signal can be applied to an actuator element that includes a hysteresis-compensated portion to move an object along the selected path.
SYSTEMS AND METHODS FOR VOLTAGE CONTRAST DEFECT DETECTION
Systems and methods of providing a probe spot in multiple modes of operation of a charged-particle beam apparatus are disclosed. The method may comprise activating a charged-particle source to generate a primary charged-particle beam and selecting between a first mode and a second mode of operation of the charged-particle beam apparatus. In the flooding mode, the condenser lens may focus at least a first portion of the primary charged-particle beam passing through an aperture of the aperture plate to form a second portion of the primary charged-particle beam, and substantially all of the second portion is used to flood a surface of a sample. In the inspection mode, the condenser lens may focus a first portion of the primary charged-particle beam such that the aperture of the aperture plate blocks off peripheral charged-particles to form the second portion of the primary charged-particle beam used to inspect the sample surface.
CHARGED PARTICLE BEAM DEVICE
To provide a charged particle beam device including a booster electrode and an object lens that generates a magnetic field in a vicinity of a sample, and capable of preventing ion discharge, an insulator is disposed between a magnetic field lens and the booster electrode. A tip of the insulator protrudes to a tip side of an upper magnetic path from a tip of a lower magnetic path of the magnetic field lens. The tip on a lower side of the insulator is above the lower magnetic path, and a non-magnetic metal electrode is embedded between the upper magnetic path and the lower magnetic path.
SYSTEMS AND METHODS OF HYSTERESIS COMPENSATION
A positioning system can include a drive unit having an actuator element and a control system. The actuator element can include a piezoelectric material. The control system can be configured to select a path between a first position and a second position, identify at least one change of direction of the actuator element along the selected path, generate a hysteresis-compensated drive signal based at least in part on the change in direction, and apply the hysteresis-compensated drive signal to the actuator element to move an object along the path.
Dual XY variable aperture in an ion implantation system
An aperture diaphragm capable of varying the size of an aperture in two dimensions is disclosed. The aperture diaphragm may be utilized in an ion implantation system, such as between the mass analyzer and the acceleration column. In this way, the aperture diaphragm may be used to control at least one parameter of the ion beam. These parameters may include angular spread in the height direction, angular spread in the width direction, beam current or cross-sectional area. Various embodiments of the aperture diaphragm are shown. In certain embodiments, the size of the aperture in the height and width directions may be independently controlled, while in other embodiments, the ratio between height and width is constant.
BEAM MANIPULATION OF ADVANCED CHARGE CONTROLLER MODULE IN A CHARGED PARTICLE SYSTEM
A system and a method for manipulating a beam of an Advanced Charge Controller module in different planes in an e-beam system are provided. Some embodiments of the system include a lens system configured to manipulate a beam in the tangential plane and the sagittal plane such that the beam spot is projected onto the wafer with high luminous energy. Some embodiments of the system include a lens system comprising at least two cylindrical lens.
SYSTEMS AND METHODS OF CLAMP COMPENSATION
A method of producing a compensation signal to compensate for misalignment of a drive unit clamp element can include applying a clamp element drive signal to a drive unit clamp element to engage a mover element, determining a first displacement of the mover element, and determining a first compensation signal based at least in part on the first displacement. The method can further comprise applying the first compensation signal to the drive unit shear elements and the clamp element drive signal to the drive unit clamp element and determining a second displacement of the mover element. If the second displacement is less than a preselected threshold, the first compensation signal can be combined with an initial shear element drive signal to produce a modified shear element drive signal. If the second displacement is greater than the preselected threshold, a second compensation signal can be determined.