A scanning electron microscope having a charged particle device that processes a specimen using a charged particle beam, the scanning electron microscope includes: an electron source; a secondary-electron detector that detects secondary electrons generated from the specimen; a backscattered-electron detector that is disposed closer to the electron source than a detection surface of the secondary-electron detector to detect backscattered electrons generated from the specimen; a shielding plate for shielding a detection surface of the backscattered-electron detector; and a moving mechanism that moves the shielding plate. In a state where the shielding plate is moved by the moving mechanism so as to shield the detection surface of the backscattered-electron detector, the shielding plate is located between the detection surface of the backscattered-electron detector and the detection surface of the secondary-electron detector.

A device for discharging an electrostatic chuck located within a vacuum chamber, the device includes a plasma distribution unit that is configured to receive plasma from an external plasma source that is located outside the vacuum chamber, and perform a distribution of the plasma within the vacuum chamber that discharges the electrostatic chuck. The device also includes a controller for controlling the distribution of the plasma; wherein the distribution of the plasma occurs during a plasma distribution period that is shorter than a duration of a plasma based cleaning process of the electrostatic chuck.

A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support arm is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.

A composite beam apparatus includes an electron beam column for irradiating an electron beam onto a sample, a focused ion beam column for irradiating a focused ion beam onto the sample to form a cross section, and a neutral particle beam column having an acceleration voltage set lower than that of the focused ion beam column for irradiating a neutral particle beam onto the sample to perform finish processing of the cross section. The electron beam column, the focused ion beam column, and the neutral particle beam column are arranged such that the beams of the columns cross each other at an irradiation point. A controller controls the electron beam column to irradiate and scan the electron beam on the sample during cross section processing by the focused ion beam column and during finish processing by the neutral particle beam column. The composite beam apparatus is capable of suppressing the influence of charge build-up, or electric field or magnetic field leakage from an electron beam column, when subjecting a sample to cross-section processing with a focused ion beam and then performing finishing processing with another beam.

A method for examining a specimen surface with a probe of a scanning probe microscope, the specimen surface having an electrical potential distribution. The method includes (a) determining the electrical potential distribution of at least one first partial region of the specimen surface; and (b) modifying the electrical potential distribution in the at least one first partial region of the specimen surface and/or modifying an electrical potential of the probe of the scanning probe microscope before scanning at least one second partial region of the specimen surface.

Disclosed is a processing method for performing a processing corresponding to a processing gas in a plurality of processing containers which are connected to a gas supply source, and at least some of which have different lengths of pipes to the gas supply source. The processing method includes simultaneously supplying the processing gas from the gas supply source to the plurality of processing containers, and individually supplying the processing gas from the gas supply source to the plurality of processing containers or to some of the plurality of processing containers.

An automated workpiece processing system including at least one workpiece processing unit, a workpiece holder configured to removably hold a batch of workpieces therein, each workpiece embodying workpiece identifying indicia where the workpiece identifying indicia is a physical representation of a sample held on a respective workpiece, and to interface with the at least one automated workpiece processing unit, and a controller including a memory having a data structure therein that effects, with the workpiece identifying indicia, batch process tracking of each workpiece in the batch of workpieces through the at least one automated workpiece processing unit in a predetermined batch workpiece processing sequence.

The disclosure relates to systems and method for processing images. The method includes selecting a predetermined reference structure, the predetermined reference structure having a known feature size/shape. The method also includes obtaining a reference image of the predetermined reference structure, and capturing a calibration image of the predetermined reference structure using an observation device. The calibration image includes a plurality of features. Additionally, the method includes identifying at least one portion of the plurality of features of the calibration image that include a feature size/shape substantially similar to the known feature size and shape of the predetermined reference structure. Finally, the method includes combining the identified portion of the plurality of features of the calibration image to form a stacked feature image, and determining a point spread function (PSF) of the observation device by comparing the obtained reference image with the stacked feature image.

The disclosure relates to systems and method for processing images. The method includes selecting a predetermined reference structure, the predetermined reference structure having a known feature size/shape. The method also includes obtaining a reference image of the predetermined reference structure, and capturing a calibration image of the predetermined reference structure using an observation device. The calibration image includes a plurality of features. Additionally, the method includes identifying at least one portion of the plurality of features of the calibration image that include a feature size/shape substantially similar to the known feature size and shape of the predetermined reference structure. Finally, the method includes combining the identified portion of the plurality of features of the calibration image to form a stacked feature image, and determining a point spread function (PSF) of the observation device by comparing the obtained reference image with the stacked feature image.

An edge ring is configured to be raised and lowered relative to a pedestal, via one or more lift pins, in a processing chamber of a substrate processing system. The edge ring includes an upper surface, an annular inner diameter, an annular outer diameter, a lower surface, and at least one feature arranged in the lower surface of the edge ring. At least one inner surface of the at least one feature is sloped.