The disclosure relates to systems and method for processing images. The method includes selecting a predetermined reference structure, the predetermined reference structure having a known feature size/shape. The method also includes obtaining a reference image of the predetermined reference structure, and capturing a calibration image of the predetermined reference structure using an observation device. The calibration image includes a plurality of features. Additionally, the method includes identifying at least one portion of the plurality of features of the calibration image that include a feature size/shape substantially similar to the known feature size and shape of the predetermined reference structure. Finally, the method includes combining the identified portion of the plurality of features of the calibration image to form a stacked feature image, and determining a point spread function (PSF) of the observation device by comparing the obtained reference image with the stacked feature image.

The disclosure relates to systems and method for processing images. The method includes selecting a predetermined reference structure, the predetermined reference structure having a known feature size/shape. The method also includes obtaining a reference image of the predetermined reference structure, and capturing a calibration image of the predetermined reference structure using an observation device. The calibration image includes a plurality of features. Additionally, the method includes identifying at least one portion of the plurality of features of the calibration image that include a feature size/shape substantially similar to the known feature size and shape of the predetermined reference structure. Finally, the method includes combining the identified portion of the plurality of features of the calibration image to form a stacked feature image, and determining a point spread function (PSF) of the observation device by comparing the obtained reference image with the stacked feature image.

An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

A charged particle beam system is disclosed, comprising: a charged particle beam generator for generating a beam of charged particles; a charged particle optical column arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; a source for providing a cleaning agent; a conduit connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element;

wherein the charged particle optical element comprises: a charged particle transmitting aperture for transmitting and/or influencing the beam of charged particles, and at least one vent hole for providing a flow path between a first side and a second side of the charged particle optical element,

wherein the vent hole has a cross section which is larger than a cross section of the charged particle transmitting aperture.

Further, a method for preventing or removing contamination in the charged particle transmitting apertures is disclosed, comprising the step of introducing the cleaning agent while the beam generator is active.

An apparatus for treating a substrate includes a process chamber that performs a liquid treatment process by dispensing a treatment liquid onto the substrate, and components provided in the process chamber. A surface of at least one of the components is formed of a material containing an ion-implanted fluorine resin.

A system and method associated with a charge drain coating are disclosed. The charge drain coating may be applied to surfaces of an electron-optical device to drain electrons that come into contact with the charge drain coating so that the performance of the electron-optical device will not be hindered by electron charge build-up. The charge drain coating may include a doping material that coalesces into clusters that are embedded within a high dielectric insulating material. The charge drain coating may be deposited onto the inner surfaces of lenslets of the electron-optical device.

There is provided a charged particle beam system in which a detector can be placed in an appropriate analysis position. The charged particle beam system (100) includes: a charged particle source (11) for producing charged particles; a sample holder (20) for holding a sample (S); a detector (40) for detecting, in the analysis position, a signal produced from the sample (S) by impingement of the charged particles on the sample (S); a drive mechanism (42) for moving the detector (40) into the analysis position; and a controller (52) for controlling the drive mechanism (42). The controller (52) performs the steps of: obtaining information about the type of the sample holder (20); determining the analysis position on the basis of the obtained information about the type of the sample holder (20); and controlling the drive mechanism (42) to move the detector (40) into the determined analysis position.

A high voltage feedthrough assembly (100) for providing an electric potential in a vacuum environment comprises a flange connector (10) being adapted for a connection with a vacuum vessel (201), wherein the flange connector (10) has an inner side (11) facing to the vacuum vessel (201) and an outer side (12) facing to an environment of the vacuum vessel 201, a vacuumtight insulator tube (20) having a longitudinal extension with a first end (21) facing to the flange connector (10) and a second end (22) being adapted for projecting into the vacuum vessel (201), and an electrode device (30) coupled to the second end (22) of the insulator tube (20), wherein the electrode device (30) has a front electrode (31), including a photocathode or a field emitter tip and facing to the vacuum vessel (201) and a cable adapter (32) for receiving a high-voltage cable (214), wherein a flexible tube connector (40) is provided for a vacuum-tight coupling of the insulator tube (20) with the flange connector (10), and a manipulator device (50) is connected with the insulator tube (20) for adjusting a geometrical arrangement of the insulator tube (20) relative to the flange connector (10). Furthermore, an electron diffraction or imaging apparatus (transmission electron microscope, TEM) 200 for static and/or time-resolved diffraction, including (nano-) crystallography, and real space imaging for structural investigations including the high voltage feedthrough assembly (100) and a method of manipulating an electrode device (30) in a vacuum environment are described.

A multi-positional valve is used to control the destination of gas flows from multiple gas sources. In one valve position the gases flow to an isolated vacuum system where the flow rate and mixture can be adjusted prior to introduction into a sample vacuum chamber. In another valve position the pre-mixed gases flow from the isolated vacuum chamber and through a needle into the sample vacuum chamber.