An electrical device for electrically measuring a sample during electron microscope imaging includes: a chip through which a slit is defined, the chip having at least one peripheral edge, the slit having an open end at the at least one peripheral edge; an electrically conductive first contact on the chip; and an electrically conductive second contact on the chip; wherein the slit is at least partially positioned between the first contacts and second contact. An electrically conductive first wire may extend along the chip electrically connected to the first contact; and an electrically conductive second wire may extend along the chip electrically connected to the second contact. The first wire and second wire may diverge from each other in extending along the chip away from the slit.

A magnetic material observation method in accordance with the present invention includes: an irradiating step including irradiating a region of a sample with an excitation beam and thereby allowing a magnetic element contained in the sample to radiate a characteristic X-ray; a detecting step including detecting intensities of a right-handed circularly polarized component and a left-handed circularly polarized component contained in the characteristic X-ray; and a calculating step including calculating the difference between the intensity of the right-handed circularly polarized component and the intensity of the left-handed circularly polarized component. Reference to such a difference enables precise measurement of the direction or magnitude of magnetization without strict limitations as to the sample.

This cross-section observation device bombards an object with a charged particle beam to repeatedly expose cross-sections of the object, bombards at least some of the cross-sections from among the plurality of the exposed cross-sections with a charged particle beam to acquire cross-sectional image information describing each of the at least some of the cross-sections, generates for each of these cross-sections a cross-sectional image described by the cross-sectional image information acquired, and generates a three-dimensional image in which the generated cross-sectional images are stacked together. This cross-section observation device displays a first three-dimensional image along with a second three-dimensional image, the first three-dimensional image being a three-dimensional image from the stacking of first cross-sectional images, which are cross-sectional images of the cross-sections described by the corresponding cross-sectional image information acquired on the basis of a first condition, and the second three-dimensional image being a three-dimensional image from the stacking of second cross-sectional images, which are cross-sectional images of the cross-sections described by the corresponding cross-sectional image information acquired on the basis of a second condition.

The disclosure relates to a dimension measurement apparatus that reduces time required for dimension measurement and eliminates errors caused by an operator. Therefore, the dimension measurement apparatus uses a first image recognition model that extracts a boundary line between a processed structure and a background over the entire cross-sectional image and/or a boundary line of an interface between different kinds of materials, and a second image recognition that output information for dividing the boundary line extending over the entire cross-sectional image obtained from the first image recognition model for each unit pattern constituting a repetitive pattern, obtains coordinates of a plurality of feature points defined in advance for each unit pattern, and measures a dimension defined as a distance between two predetermined points of the plurality of feature points.

The disclosure relates to a dimension measurement apparatus that reduces time required for dimension measurement and eliminates errors caused by an operator. Therefore, the dimension measurement apparatus uses a first image recognition model that extracts a boundary line between a processed structure and a background over the entire cross-sectional image and/or a boundary line of an interface between different kinds of materials, and a second image recognition that output information for dividing the boundary line extending over the entire cross-sectional image obtained from the first image recognition model for each unit pattern constituting a repetitive pattern, obtains coordinates of a plurality of feature points defined in advance for each unit pattern, and measures a dimension defined as a distance between two predetermined points of the plurality of feature points.

A sensor may be used to measure a degree of tilt of a sample. The sensor may include an apparatus having a light source, first, second, and third optical elements, a lens, and an aperture. The first optical element may supply light from the light source toward the sample, and may supply light input into the first optical element from the sample toward the second optical element. The second optical element may supply light toward first and second sensing elements. An aperture may be arranged on a focal plane of the lens. A light beam incident on the first sensing element may be a reference beam.

A semiconductor analysis system includes a machining device that machines semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates machining conditions based on an evaluation result of the thin film sample, and outputs the updated machining conditions to the machining device.

Provided is a charged particle beam system capable of reducing the force applied to a sample when a chuck device grips the sample. The charged particle beam system is typified by an electron microscope including a sample chamber, a sample exchange chamber connected to the sample chamber, a sample container capable of being removably attached in the sample exchange chamber, and a transport device for transporting the sample between the sample container and the sample exchange chamber. The transport device includes the chuck device for gripping the sample, a drive mechanism for moving the chuck device in a given direction, a mechanical driver for actuating the chuck device, and a power transmission mechanism for transmitting power of the mechanical driver to the chuck device. The power transmission mechanism includes a shaft and a resilient member that elastically deforms when a force in the given direction is applied to the shaft.

The present invention relates to a scanning electron microscope configured to scan a workpiece, such as a wafer, mask, panel, or substrate, with an electron beam to generate an image of the workpiece. The scanning electron microscope includes a deflector (17, 18) configured to deflect the electron beam to scan a target region (T) on the workpiece (W) with the electron beam, and a deflection controller (22) configured to apply to the deflectors (17, 18) a scanning voltage that causes the electron beam to scan the target region (T) and an offset voltage that shifts the electron beam from an optical axial center (O) to the target region (T).

Provided is a charged particle beam system capable of preventing the data acquisition time from increasing. A control method for the system is also provided. The charged particle beam system includes: a beam blanker for blanking a charged particle beam; a sample stage on which a sample is tiltably held and thus can assume a tilt angle; a blanking controller for controlling the blanking of the charged particle beam and causing a pulsed beam having a duty ratio to be directed at the sample; and a tilt controller for controlling the tilt angle of the sample. The blanking controller sets the duty ratio of the pulsed beam based on the tilt angle of the sample.