The present disclosure discloses a transmission electron microscope in-situ chip and a preparation method thereof. The transmission electron microscope in-situ chip includes a transmission electron microscope high-resolution in-situ gas phase heating chip, a transmission electron microscope high-resolution in-situ liquid phase heating chip and a transmission electron microscope in-situ electrothermal coupling chip. The transmission electron microscope high-resolution in-situ gas phase heating chip and the transmission electron microscope high-resolution in-situ liquid phase heating chip are respectively suitable for gas samples and liquid samples, and the transmission electron microscope in-situ electrothermal coupling chip realizes the multi-functional embodiment of electrothermal coupling. The three transmission electron microscope in-situ chips have the advantages of high resolution and low sample drift rate.

The present disclosure discloses a transmission electron microscope in-situ chip and a preparation method thereof. The transmission electron microscope in-situ chip includes a transmission electron microscope high-resolution in-situ gas phase heating chip, a transmission electron microscope high-resolution in-situ liquid phase heating chip and a transmission electron microscope in-situ electrothermal coupling chip. The transmission electron microscope high-resolution in-situ gas phase heating chip and the transmission electron microscope high-resolution in-situ liquid phase heating chip are respectively suitable for gas samples and liquid samples, and the transmission electron microscope in-situ electrothermal coupling chip realizes the multi-functional embodiment of electrothermal coupling. The three transmission electron microscope in-situ chips have the advantages of high resolution and low sample drift rate.

There is provided a technique capable of shortening a photographing time and obtaining a more accurate photographed image when photographing a sample SAM using a charged particle beam device 1. The charged particle beam device 1 includes an electron gun 3, an objective lens 6, a stage 8, detectors 10 and 11, an integrated control unit C0, a photographing function, and an autofocus function. Each of a plurality of photographing visual fields is focused in a focus value calculation visual field 64 adjacent to a designated visual field 61 designated as a photographing target among the plurality of photographing visual fields, and a focus value calculated in the focus value calculation visual field 64 is used for calculating focus values of each of the plurality of photographing visual fields.

Systems and methods for image enhancement are disclosed. A method for enhancing an image may include receiving records of a performance metric for beams of the multi-beam system in an imaging process, each record associated with a beam. The method may also include determining whether an abnormality of a beam occurs based on a baseline value determined using a portion of the records. The method may further include providing an abnormality indication in response to the determination that the abnormality has occurred.

A ponderomotive phase plate, also called a laser phase plate or standing wave optical phase plate, has a first minor and a second minor that define an optical cavity. An electron beam passes through a focal spot of the optical cavity. A laser with variable polarization angle of laser light is coupled to the optical cavity. A standing wave of polarized laser light, with an anti-node at the focal spot of the optical cavity, causes variable modulation of the electron beam. The variable modulation of the electron beam is controllable by the variable polarization angle of the laser light. In a transmission electron microscope, an image plane receives the electron beam modulated by the standing wave optical phase plate. An image formed at the image plane is based on the variable polarization angle of the polarized laser light.

Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.

An electron beam apparatus is provided. The apparatus comprises an e-beam source configured to generate an electron beam, a first part configured to support a substrate, the first part comprising an object table for supporting the substrate, the first part further comprising a short stroke actuator system for actuating the object table relative to the e-beam source, the short stroke actuator system comprising a short stroke forcer. The apparatus further comprises a second part configured to movably support the first part and a long stroke actuator system configured to actuate movement of the first part with respect to the second part, the long stroke actuator system comprising a long stroke forcer, wherein the short stroke forcer and/or the long stroke forcer is configured to be switched off while the electron beam is projected onto the substrate.

Methods include providing a multi-pillar sample including at least a first pillar and a second pillar parallel with the first pillar, directing a charged particle beam to the first pillar, imaging the first pillar at a plurality of rotational positions by rotating the multi-pillar sample about a first pillar axis of the first pillar, directing the charged particle beam to the second pillar, and imaging the second pillar at a plurality of rotational positions by rotating the multi-pillar sample about a second pillar axis of the second pillar. Related apparatus for performing disclosed methods are disclosed. Multi-pillar samples are also disclosed.

Two types of operational parameters are used in a particle beam microscope. First parameters influence the image quality, and have settings that are alterable by a user in view of obtaining a better image quality. Second parameters characterize the mode of operation, and the image quality becomes poorer when these change. A mode of operation of the particle beam microscope includes: registering of settings of the first parameters and the second parameters, which the user undertakes in a period of time; analysing a plurality of recorded settings of the first parameters and of the second parameters; determining settings of the first parameters which are advantageous in view of the image quality on the basis of the current settings of the second parameters; and setting the determined advantageous settings of the first parameters.

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.