A system and corresponding method for electron cryomicroscopy, comprising: a field-emission gun for generating an electron beam, the field-emission gun being energized, in use, to generate a 80 keV to 120 keV electron beam which is emitted into a vacuum enclosure and towards a specimen holder; the vacuum enclosure containing, at least in part: an objective lens for focusing an image of the specimen, the objective lens being disposed in the path of the electron beam and having a chromatic aberration coefficient, Cc, selected to achieve a resolution value better than a desired amount; the specimen holder for holding a specimen, the specimen holder being disposed in the path of the electron beam; a cryostage for cooling a specimen; a cryo-shield for surrounding a specimen and reducing an ice contamination rate of the specimen; and a direct electron detector comprising an array of pixels, each pixel capable of detecting an incident electron that has passed through a sample and struck the pixel.

There is provided a sample support capable of easily placing a sample into position. The sample support is used such that a sample floating on the surface of water is scooped and held. The sample support has: a first region on which the sample is to be placed; and a second region of higher wettability than the first region.

There is provided a sample support capable of easily placing a sample into position. The sample support is used such that a sample floating on the surface of water is scooped and held. The sample support has: a first region on which the sample is to be placed; and a second region of higher wettability than the first region.

Disclosed herein are electron microscopes with improved imaging. An example electron microscope at least includes an illumination system, for directing a beam of electrons to irradiate a specimen, an elongate beam conduit, through which the beam of electrons is directed; a multipole lens assembly configured as an aberration corrector, and a detector for detecting radiation emanating from the specimen in response to said irradiation, wherein at least a portion of said elongate beam conduit extends at least through said aberration corrector and has a composite structure comprising intermixed electrically insulating material and electrically conductive material, wherein the elongate beam conduit has an electrical conductivity σ and a thickness t, with σt<0.1 Ω.sup.−1.

The present invention provides a transparent electroconductive layer-equipped cover element having a pressure-sensitive adhesive sheet preliminarily laminated thereto, wherein the pressure-sensitive adhesive sheet comprises a pressure-sensitive adhesive layer in which a refractive index adjustment zone having a refractive index greater than that of a base pressure-sensitive adhesive material thereof is formed over a given range from a surface of the pressure-sensitive adhesive layer in a thickness direction thereof, whereby: in a lamination process of a customer which is a supply destination of the transparent electroconductive layer-equipped cover element, it becomes possible to eliminate a need to distinguish between obverse and reverse sides of the pressure-sensitive adhesive sheet itself; and, when the transparent electroconductive layer-equipped cover element is bonded to an optical element through the pressure-sensitive adhesive layer, it becomes possible to suppress internal reflection in a laminate formed of these optical elements.

A device for measuring electron orbital angular momentum states in an electron microscope includes the following components aligned sequentially in the following order along an electron beam axis: a phase unwrapper (U) that is a first electrostatic refractive optical element comprising an electrode and a conductive plate, where the electrode is aligned perpendicular to the conductive plate; a first electron lens system (L1); a phase corrector (C) that is a second electrostatic refractive optical element comprising an array of electrodes with alternating electrostatic bias; and a second electron lens system (L2). The phase unwrapper may be a needle electrode or knife edge electrode.

Electron-optical devices and associated methods are disclosed. In one arrangement, an electron-optical device projects a multi-beam of sub-beams of charged particles to a sample. A plurality of plates are provided in which are defined respective aperture arrays. The plates comprise an objective lens array configured to project the sub-beams towards the sample. The aperture arrays defined in at least two of the plates each have a geometrical characteristic configured to apply a perturbation to a corresponding target property of the sub-beams. A controller controls potentials applied to the plates having the geometrical characteristics such that the applied perturbations together substantially compensate for a variation in the target property over a range of a parameter of the device.

A sample cartridge carrier apparatus is coupled with a focused ion beam processing apparatus (FIB processing apparatus). A guide mechanism is configured to guide a series of movements of a sample cartridge holder to allow a sample cartridge to be held by a carrier base on a sub stage. Sub cooling equipment is configured to cool the sample cartridge via the sub stage. A carrier mechanism carries the carrier base between the sub stage and a main stage.

The present disclosure is related to a Schottky thermal field emission (TFE) source for emitting an electron beam. Exemplary embodiments can provide the acquisition of high-resolution emission images of Schottky TFE source and compute usable beam current and brightness based on experimentally developed usable current criteria. Advantages of these exemplary embodiments include: (1) obtaining usable beam current and brightness of a Schottky TFE source can be important with reference to Schottky TFE development and quality inspection, and (2) optimizing Schottky TFE operation modes so as to maximize Schottky TFE usable beam current and brightness can enable operation of multi-beam electron optical tools.

In order to allow detecting backscattered electrons (BSEs) generated from the bottom of a hole for determining whether a hole with a super high aspect ratio is opened or for inspecting and measuring the ratio of the top diameter to the bottom diameter of a hole, which are typified in 3D-NAND processes of opening a hole, a primary electron beam accelerated at a high accelerating voltage is applied to a sample. Backscattered electrons (BSEs) at a low angle (e.g. a zenith angle of five degrees or more) are detected. Thus, the bottom of a hole is observed using “penetrating BSEs” having been emitted from the bottom of the hole and penetrated the side wall. Using the characteristics in which a penetrating distance is relatively prolonged through a deep hole and the amount of penetrating BSEs is decreased to cause a dark image, a calibration curve expressing the relationship between a hole depth and the brightness is given to measure the hole depth.