An apparatus for analyzing and/or processing a sample with a particle beam, comprising: a providing unit for providing the particle beam; a shielding element for shielding an electric field (E) generated by charges (Q) accumulated on the sample, wherein the shielding element has a through opening for the particle beam to pass through towards the sample; a detecting unit configured to detect an actual position of the shielding element; and an adjusting unit for adjusting the shielding element from the actual position into a target position.

Provided is an electron microscope for generating an observation image of a sample by using an electron beam in order to obtain a scanning electron microscope image by low angle backscattered electrons, which are backscattered electrons emitted at a low angle with respect to a sample surface, even for an electron microscope including an objective lens that leaks a magnetic field to a sample. The electron microscope includes: an electron source configured to irradiate the sample with the electron beam; an objective lens configured to focus the electron beam by a leakage magnetic field which is a magnetic field leaked toward the sample; a detector configured to detect a third electron which is an electron emitted when a low angle backscattered electron is caused to collide with the sample by the leakage magnetic field, the low angle backscattered electron being a backscattered electron emitted at a low angle with respect to a surface of the sample; and a compensation electrode or a compensation magnetic pole provided between the sample and the detector and configured to control a trajectory of the third electron.

Methods for using electron diffraction holography to investigate a sample, according to the present disclosure include the initial steps of emitting a plurality of electrons toward the sample, forming the plurality of electrons into a first electron beam and a second electron beam, and modifying the focal properties of at least one of the two beams such that the two beams have different focal planes. Once the two beams have different focal planes, the methods include focusing the first electron beam such that it has a focal plane at or near the sample, and focusing the second electron beam so that it is incident on the sample, and has a focal plane in the diffraction plane. An interference pattern of the first electron beam and the diffracted second electron beam is then detected in the diffraction plane, and then used to generate a diffraction holograph.

Methods for using electron diffraction holography to investigate a sample, according to the present disclosure include the initial steps of emitting a plurality of electrons toward the sample, forming the plurality of electrons into a first electron beam and a second electron beam, and modifying the focal properties of at least one of the two beams such that the two beams have different focal planes. Once the two beams have different focal planes, the methods include focusing the first electron beam such that it has a focal plane at or near the sample, and focusing the second electron beam so that it is incident on the sample, and has a focal plane in the diffraction plane. An interference pattern of the first electron beam and the diffracted second electron beam is then detected in the diffraction plane, and then used to generate a diffraction holograph.

Computer-implemented methods for controlling a charged particle microscopy system include estimating a drift of a stage of the charged particle microscopy system based on an image sequence, and automatically adjusting a stage settling wait duration based on the drift estimate. Charged particle microscopy systems include an imaging system, a movement stage, and a processor and memory configured with computer-executable instructions that, when executed, cause the processor to estimate a stage settling duration of the movement stage based on an image sequence obtained with the imaging system, and automatically adjust a stage settling wait duration for the movement stage based on the stage settling duration.

Computer-implemented methods for controlling a charged particle microscopy system include estimating a drift of a stage of the charged particle microscopy system based on an image sequence, and automatically adjusting a stage settling wait duration based on the drift estimate. Charged particle microscopy systems include an imaging system, a movement stage, and a processor and memory configured with computer-executable instructions that, when executed, cause the processor to estimate a stage settling duration of the movement stage based on an image sequence obtained with the imaging system, and automatically adjust a stage settling wait duration for the movement stage based on the stage settling duration.

Provided is a charged particle beam device capable of reducing scattering of a foreign substance collected by a foreign substance collecting unit. The charged particle beam device includes: a sample chamber in which a sample is to be disposed; and a charged particle beam source configured to irradiate the sample with a charged particle beam. The charged particle beam device further includes: a foreign substance attachment/detachment unit from or to which a foreign substance is to detach or attach; and a foreign substance collecting unit provided in the sample chamber and configured to collect a foreign substance dropped from the foreign substance attachment/detachment unit. An opening through which the foreign substance passes is provided in an upper end portion of the foreign substance collecting unit. An area of the opening is smaller than a horizontal cross-sectional area of an internal space of the foreign substance collecting unit.

The disclosure relates to a method for examining a sample in a scanning transmission charged particle microscope. The method comprises the steps of providing a scanning transmission charged particle microscope, having an illuminator and a scanning unit. The method comprises the steps of providing a desired dose for at least a first sample location of the plurality of sample locations; and determining, using a controller of the microscope, a first set of parameter settings for the illuminator and the scanning unit for substantially achieving the desired dose at the first sample location.

A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending nward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage.

Apparatus and methods for adjusting beam condition of charged particles are disclosed. According to certain embodiments, the apparatus includes one or more first multipole lenses displaced above an aperture, the one or more first multipole lenses being configured to adjust a beam current of a charged-particle beam passing through the aperture. The apparatus also includes one or more second multipole lenses displaced below the aperture, the one or more second multipole lenses being configured to adjust at least one of a spot size and a spot shape of the beam.