A thin film liquid cell suitable for transmission electron microscopy at room temperature is fabricated as follows. A thin film floating on a liquid is prepared. A droplet of the liquid with the thin film floating thereon is transferred to a support by means of a loop. The loop carries the droplet and the droplet carries the thin film during this transfer. Sufficient liquid from the droplet on the support is removed to form the thin film liquid cell.

Disclosed in the embodiments of the present invention is an electron microscope, comprising: an electron source, which is configured to generate an electron beam; a first beam conduit, which is configured to accelerate the electron beam; a second beam conduit, which is configured to accelerate the electron beam; a first detector, which is disposed between the first beam conduit and the second beam conduit and configured to receive secondary electrons generated by the electron beam acting on a sample to be tested; and a control electrode, which is disposed between the first detector and an optical axis of the electron beam and configured to change the direction of movement of backscattered electrons and the secondary electrons generated by the electron beam acting on said sample. By means of the electron microscope provided by the embodiments of the present invention, secondary electrons generated by a pure electron beam acting on a sample to be tested can be detected.

Provided is a sample image observation device including an SEM and a control system configured to control the SEM. An observation region of a sample is divided into a plurality of sections, and restoration processing is performed on an image which is acquired by irradiating each section with a sparse electron beam, based on scanning characteristics in the section. A reduction in quality of a restored image due to a beam irradiation position deviation caused by a scanning response is prevented and restoration with high accuracy and high throughput under a condition for preventing sample damage is possible.

A metrology system is disclosed. In one embodiment, the metrology system includes a controller communicatively coupled to a reference metrology tool and an optical metrology tool, the controller including one or more processors configured to: generate a geometric model for determining a profile of a test HAR structure from metrology data from a reference metrology tool; generate a material model for determining one or more material parameters of a test HAR structure from metrology data from the optical metrology tool; form a composite model from the geometric model and the material model; measure at least one additional test HAR structure with the optical metrology tool; and determine a profile of the at least one additional test HAR structure based on the composite model and metrology data from the optical metrology tool associated with the at least one HAR test structure.

A scanning electron microscopy (SEM) system is disclosed. The SEM system includes an electron source configured to generate an electron beam and a set of electron optics configured to scan the electron beam across the sample and focus electrons scattered by the sample onto one or more imaging planes. The SEM system includes a first detector module positioned at the one or more imaging planes, wherein the first detector module includes a multipixel solid-state sensor configured to convert scattered particles, such as electrons and/or x-rays, from the sample into a set of equivalent signal charges. The multipixel solid-state sensor is connected to two or more Application Specific Integrated Circuits (ASICs) configured to process the set of signal charges from one or more pixels of the sensor.

A method for inspecting a sample by means of a multi-beam charged particle inspection apparatus, and an apparatus for performing this method are provided. The multi-beam charged particle inspection apparatus is configured to project an array of charged particle beamlets within an exposure area on the sample. The apparatus includes a detection system for detecting X-Rays and/or cathodoluminescent light from the exposure area emitted by the sample due to an interaction of the array of charged particle beamlets with the sample. The method includes the steps of projecting the array of charged particle beamlets within the exposure area on the sample, and monitoring a combined emission of X-Rays and/or cathodoluminescent light from the interaction of substantially all charged particle beamlets of the array of charged particle beamlets with the sample.

A system and method for defect inspection using voltage contrast in a charged particle system are provided. Some embodiments of the system and method include positioning the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area; positioning the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and comparing the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.

A system and method for defect inspection using voltage contrast in a charged particle system are provided. Some embodiments of the system and method include positioning the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area; positioning the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and comparing the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.

Provided is a sample loading method of loading a cooled sample into a sample exchange chamber of a charged particle beam apparatus includes: attaching the sample container in which a sample and liquid nitrogen are accommodated to the sample exchange chamber via a gate valve; evacuating a space between a liquid surface of the liquid nitrogen and the gate valve in a state in which the gate valve is closed; discharging the liquid nitrogen in the sample container after the space between the liquid surface of the liquid nitrogen and the gate valve has been evacuated; evacuating a space in the sample container after the liquid nitrogen in the sample container has been discharged; and opening the gate valve after the space in the sample container has been evacuated.

Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.