A particle beam apparatus is used for imaging, processing and/or analyzing an object. A computer program product may be used to facilitate imaging, processing and/or analyzing the object. A magnification may be chosen from a first magnification range of the particle beam apparatus by driving a first amplifier unit and a second amplifier unit. If it is established that there are prerequisites which would actually result in the particle beam apparatus being switched to a different magnification from a second magnification range, the switching is avoided by feeding an analog amplifier signal from an amplifier unit to a scanning unit of the particle beam apparatus, guiding the particle beam over the object using the scanning unit, and imaging, processing and/or analyzing the object with the particle beam.

In an electron beam device provided with two columns including an irradiation optical system and an imaging optical system, a photoelectron image for use in adjusting the irradiation optical system is made sharper. The electron beam device includes: an irradiation optical system which irradiates a sample placed on a stage with an electron beam; a light irradiation unit 50 which irradiates the sample with light containing ultraviolet rays; a sample voltage control unit 44 which applies a negative voltage to the sample so that, before the electron beam reaches the sample, the electron orbit inverts; and an imaging optical system which acquires a mirror electron image by forming an image of mirror electrons reflected by application of the negative voltage. In the electron beam device, the imaging optical system includes a sensor 32 which obtains a mirror electron image and a stray light suppression part 27 which is provided between the sensor and the stage 31 and which suppresses reaching the sensor of the light emitted from the light irradiation unit.

A method of setting a parameter of a charged particle beam device, for shortening the time required to adjust an ABCC parameter. An inverse conversion processing unit generates a simulator input signal corresponding to an electron emitted from a sample. A simulation detector uses an arithmetic model that simulates a detector and executes arithmetic processing on the simulator input signal in a state in which characteristic information is reflected in an arithmetic parameter. A simulated image conversion unit executes arithmetic processing corresponding to an image conversion unit and converts a signal from the simulation detector into a simulated image. An ABCC search unit searches for an ABCC parameter with respect to the simulation detector so that an evaluation value obtained from the simulated image becomes a specified reference value, and outputs the ABCC parameter as a search result to an ABCC control unit of the actual machine.

A semiconductor analysis system includes a machining device that machines a semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates acquisition conditions of the transmission electron microscope image based on an evaluation result of the thin film sample, and outputs the updated acquisition conditions to the transmission electron microscope device

Embodiments of the present disclosure provide a grid structure. The grid structure includes a carrier and a support column; wherein the support column is located on the carrier, the support column has a top surface for supporting a sample; and the support column has a groove, the groove extends along a direction from the top surface to the carrier, and a groove wall of the groove is connected to the top surface.

Embodiments of the present disclosure provide a grid structure. The grid structure includes a carrier and a support column; wherein the support column is located on the carrier, the support column has a top surface for supporting a sample; and the support column has a groove, the groove extends along a direction from the top surface to the carrier, and a groove wall of the groove is connected to the top surface.

The present invention relates to a monochromator device. The monochromator device includes a first radiofrequency cavity positioned to receive an output beam from an electron source. A second radiofrequency cavity is positioned to receive the output beam from the first radiofrequency cavity. The first radiofrequency cavity and the second radiofrequency cavity are configured to, in combination, in combination, correct one or more energy deviations in time and space of the output beam.

The present invention relates to a monochromator device. The monochromator device includes a first radiofrequency cavity positioned to receive an output beam from an electron source. A second radiofrequency cavity is positioned to receive the output beam from the first radiofrequency cavity. The first radiofrequency cavity and the second radiofrequency cavity are configured to, in combination, in combination, correct one or more energy deviations in time and space of the output beam.

A lamella 10 including an analysis portion 11 and a cutout portion 12 separated from the analysis portion 11 is produced. When a plurality of the lamellae 10 are transported to a lamella grid 20, the plurality of lamellae 10 are supported by a support portion 22 protruding from a surface of a substrate 21, and are mounted adjacent to each other in a Z direction. At this time, the cutout portion 12 prevents the analysis portion 11 from damage.

A lamella 10 including an analysis portion 11 and a cutout portion 12 separated from the analysis portion 11 is produced. When a plurality of the lamellae 10 are transported to a lamella grid 20, the plurality of lamellae 10 are supported by a support portion 22 protruding from a surface of a substrate 21, and are mounted adjacent to each other in a Z direction. At this time, the cutout portion 12 prevents the analysis portion 11 from damage.