An etching method is performed in a state where a substrate is placed on a substrate support provided in a chamber of a plasma processing apparatus. In the etching method, radio-frequency power is supplied to generate plasma from a gas in the chamber. Subsequently, a negative DC voltage is applied to a lower electrode of the substrate support during the supplying of the radio-frequency power to etch the substrate with positive ions from plasma. Subsequently, the applying of the negative DC voltage to the lower electrode and the supplying of the radio-frequency power are stopped to generate negative ions. Subsequently, a positive DC voltage is applied to the lower electrode in a state where the supply of the radio-frequency power is stopped to supply the negative ions to the substrate.

A focused ion beam system has a differentially-pumped vacuum unit and a focused ion beam column, comprising: a vacuum pad, of a porous material, with a suction surface exposed in a way that surrounds the outer edge of a substrate to be processed; a substrate support on which the substrate and vacuum pad are placed, and a vacuum pump for vacuum evacuation using the vacuum pad. The system provides an arrangement in which, while a head of the differentially-pumped vacuum unit partially falls out of the outer edge of the substrate, the suction surface allows an input of air evacuated from a region between the suction surface and the head, and the processing area on a substrate is expanded by allowing the processing with an ion beam to be performed even in the vicinity of the peripheral substrate surface without requiring a large vacuum chamber.

Methods for using a dual beam microscope system to simultaneously process a sample and image the processed portions of the sample, according to the present disclosure include the initial steps of emitting a plurality of electrons toward the sample, splitting the plurality of electrons into two electron beams, and then modifying the focal properties of at least one of the electron beams such that the two electron beams have different focal planes. Once the two beams have different focal planes, the first electron beam is focused such that it acts as a STEM beam. The STEM beam is then used to process a region of the sample to induce a physical change (e.g., perform milling, deposition, charge adjustment, phase change, etc.). The second electron beam is focused to act as a TEM beam to perform imaging of the region of the sample being processed.

Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a method of forming a pattern for a semiconductor structure includes forming a pattern of parallel lines above a substrate. The method also includes aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool. The e-beam tool includes a column having a blanker aperture array (BAA) with a staggered pair of columns of openings along an array direction orthogonal to the scan direction. The method also includes forming a pattern of cuts or vias in or above the pattern of parallel lines to provide line breaks for the pattern of parallel lines by scanning the substrate along the scan direction. A cumulative current through the column has a non-zero and substantially uniform cumulative current value throughout the scanning.

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

Methods include directing a group of ions through a separation region of an ion manipulation apparatus, separating the group of ions in the separation region based on ion mobility, selecting a subset of the group of ions based on a dependence between ion mobility and ion arrival time of the separated ions at a deposition switch of the ion manipulation apparatus, and depositing the selected subset of ions on a substrate. Related systems and ion manipulation apparatus are disclosed. Also disclosed are methods and system that provide concurrent ion accumulation and ion separation in coupled and switchable electrode regions using traveling wave electric fields.

A method of evaluating a region of a sample that includes two or more sub-regions adjacent to each other that have different milling rates. The method can include: scanning a focused ion beam over the region during a single scan frame such that the ion beam is scanned over a first sub-region of the region having a first milling rate at a first scan rate and then scanned over a second sub-region of the region having a second milling rate at a second scan rate, where the second milling rate is faster than the first milling rate and second scan rate is faster than the first scan rate; and repeating the scanning process a plurality of times to etch the region to a desired depth.

It is provided a method for obtaining an energy spectrum of a focused ion beam when a Bragg peak chamber is used to measure an integrated depth dose, IDD. The method comprises the steps of: simulating doses of a set of nominally mono energetic focused ion beams; determining a lateral extension of a Bragg peak chamber to evaluate; calculating a set of theoretic component IDD curves, CIDDs, by laterally integrating the dose of the simulated set of the nominally mono energetic focused ion beams, over the lateral extension of the Bragg peak chamber; storing calculated CIDDs; obtaining a measured IDD of a focused ion beam with a nominal energy using the Bragg peak chamber; and performing a fit of a linear combination of CIDDs to the measured IDD, to determine an energy spectrum for the focused ion beam with the nominal beam energy.

An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal.