Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.

Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.

A method for fabricating structures includes on a substrate includes providing the substrate having a substrate surface, and generating nanostructures or microstructures on the substrate surface at least in part by exposing the substrate surface to thermal particles from a thermal particle source while irradiating the substrate surface with an ion beam. The generated nanostructures or microstructures have a smaller surface area than the area of incidence of the ion beam or a beam generated by the thermal particle source. The method also includes obtaining a measurement of a characteristic of the substrate surface and adjusting at least one of the thermal particle source and the ion beam based on the measurement.

Provided herein are approaches for angle control of neutral reactive species ion beams. In one approach, a workpiece processing apparatus may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, and an extraction plate coupled to the chamber housing. The extraction plate may include a plurality of channels for delivering one or more radical beams to a workpiece, wherein each of the plurality of channels has a lengthwise axis oriented at a non-zero angle relative to a perpendicular extending from a main surface of the workpiece, wherein each channel of the plurality of channels has a channel length and a channel width, and wherein the channel width varies along the channel length.

The present disclosure provides several methods for processing a substrate within a shutterless ion beam etching (IBE) system or shutterless ion assist ion beam deposition (IBD) system while preventing electrostatic damage to the substrate. In the IBE, at an etch completion, the ion energy to the ion source is reduced to less than 20 electron volts while at least one of the devices of the plurality of devices on the top surface of the substrate is exposed to a portion of the ion beam. In the IBD, at a deposition ion assist completion, the ion energy from the second ion source is reduced to less than 20 electron volts while at least one of the devices of the plurality of devices on the top surface of the substrate is exposed to the second ion beam.

A structure for performing analysis includes a first opening formed on a back side of a substrate and passing through the substrate, a second opening connected with a bottom of the first opening and penetrating into a first dielectric layer formed on a front side of the substrate, a first conductive layer formed on a sidewall of the second opening and a contact element in the first dielectric layer, and a second conductive layer formed on a second dielectric layer. The first conductive layer contacts the second conductive layer electrically.

A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.

An electrostatic beam transfer lens for a multi-beam apparatus that includes a series of multiple, successive electrodes, such that an aperture bore of each electrode is aligned along an electron gun axis and is configured to allow multiple beams to pass therethrough. The first electrode in the series is a cylindrical electrode configured to receive the multiple beams at an entrance plane. The first electrode has a bore length and a bore diameter such that a ratio of bore diameter/bore length<0.3. The shape of the first electrode defines the electrostatic field penetration to the entrance plane of the first electrode to prevent lens focusing fields of the electrostatic beam transfer lens from extending through the first electrode and beyond the entrance plane, thus providing a uniform, flat electric field at the entrance area of the electrostatic transfer lens.

The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.

Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.