Provided is an inspection apparatus including: an irradiation source irradiating a first pattern formed on an inspection target object with an electron beam; a detection circuit acquiring a first inspection image generated from the first pattern by irradiation; a filter circuit performing smoothing using a local region having a first size in a direction parallel to a first outline included in the first inspection image and a second size smaller than the first size in a direction perpendicular to the first outline and acquiring a second inspection image including a second outline generated by the smoothing; and a comparison circuit comparing the second inspection image with a predetermined reference image.

Provided is a sample loading method of loading a cooled sample into a sample exchange chamber of a charged particle beam apparatus includes: attaching the sample container in which a sample and liquid nitrogen are accommodated to the sample exchange chamber via a gate valve; evacuating a space between a liquid surface of the liquid nitrogen and the gate valve in a state in which the gate valve is closed; discharging the liquid nitrogen in the sample container after the space between the liquid surface of the liquid nitrogen and the gate valve has been evacuated; evacuating a space in the sample container after the liquid nitrogen in the sample container has been discharged; and opening the gate valve after the space in the sample container has been evacuated.

Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.

Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.

An apparatus for generating electron radiation comprises a wire-shaped hot cathode that is much more extensive in a longitudinal direction than in a transverse direction. Electron radiation emerges from the hot cathode that, due to the elongated shape of the hot cathode, exhibits an elongated, line-shaped cross section perpendicular to its direction of propagation, where the extension in longitudinal direction of the line is significantly greater than in transverse direction of the line. The apparatus further comprises a cathode electrode and an anode. A voltage for accelerating the electrons emitted from the hot cathode is applied between the cathode electrode and the anode. The hot cathode is arranged to be spaced apart from the cathode electrode such that electrons that are accelerated to the anode are emitted from the hot cathode in each of the transverse directions.

An apparatus for generating electron radiation comprises a wire-shaped hot cathode that is much more extensive in a longitudinal direction than in a transverse direction. Electron radiation emerges from the hot cathode that, due to the elongated shape of the hot cathode, exhibits an elongated, line-shaped cross section perpendicular to its direction of propagation, where the extension in longitudinal direction of the line is significantly greater than in transverse direction of the line. The apparatus further comprises a cathode electrode and an anode. A voltage for accelerating the electrons emitted from the hot cathode is applied between the cathode electrode and the anode. The hot cathode is arranged to be spaced apart from the cathode electrode such that electrons that are accelerated to the anode are emitted from the hot cathode in each of the transverse directions.

A specimen machining device includes an ion source which irradiates a specimen with an ion beam, a first rotating body (specimen holder) that holds the specimen and is rotatable about a first axis serving as a rotation axis, and a second rotating body on which the first rotating body is disposed and which is rotatable about a second axis serving as a rotation axis different from the first axis. The specimen machining device irradiates the specimen with the ion beam while moving the specimen by the rotation of the first rotating body and the rotation of the second rotating body.

A specimen machining device includes an ion source which irradiates a specimen with an ion beam, a first rotating body (specimen holder) that holds the specimen and is rotatable about a first axis serving as a rotation axis, and a second rotating body on which the first rotating body is disposed and which is rotatable about a second axis serving as a rotation axis different from the first axis. The specimen machining device irradiates the specimen with the ion beam while moving the specimen by the rotation of the first rotating body and the rotation of the second rotating body.

Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.

Provided is an ion implanter including an ion source that generates ions, an extraction unit that generates an ion beam by extracting the ions from the ion source and accelerating the ions, a linear acceleration unit that accelerates the ion beam extracted and accelerated by the extraction unit, an electrostatic acceleration/deceleration unit that accelerates or decelerates the ion beam emitted from the linear acceleration unit, and an implantation processing chamber in which implantation process is performed by irradiating a workpiece with the ion beam emitted from the electrostatic acceleration/deceleration unit.