A calibration method for calibrating the position error in the point of interest induced from the stage of the defect inspection tool is achieved by controlling the deflectors directly. The position error in the point of interest is obtained from the design layout database.

Provided is a method of evaluating carbon concentration of a silicon sample, which includes: forming an oxide film on at least a part of a surface of an evaluation-target silicon sample; irradiating a particle beam onto a surface of the oxide film; irradiating excitation light having energy larger than a band gap of silicon onto the surface of the oxide film, onto which the particle beam has been irradiated; measuring intensity of photoluminescence emitted from the evaluation-target silicon sample irradiated with the excitation and evaluating carbon concentration of the evaluation-target silicon sample on the basis of the measured intensity of photoluminescence, wherein the photoluminescence is band-edge luminescence of silicon.

A method for depth controlled ion milling, the method may include (a) ion milling a calibrated area and a target area; wherein the ion milling comprises exposing an interior of the calibrated area to provide an exposed interior of the calibrated area; wherein the target area comprises a buried region of interest that is positioned at a certain depth; wherein the calibrated area comprises a certain layer that is positioned at the certain depth; wherein the certain layer is visually distinguishable from another layer of the calibrated area that is precedes the certain layer; (ii) monitoring a progress of the milling by viewing the exposed interior of the calibrated area; and (iii) controlling of the ion milling based on an outcome of the monitoring.

A beam position monitor is provided, for measuring a position of a beam of charged particles passing through a chamber, the beam position monitor including a first magnetic field sensor and a second magnetic field sensor configured to be installed in the chamber on either side of the beam of charged particles, each magnetic field sensor including a conductive loop, the conductive loop of the first magnetic field sensor and the conductive loop of the second magnetic field sensor being configured to have inductances different from one another. A measurement system and a particle accelerator are also provided.

A secondary storage container is a member which surrounds a primary storage container. A vaporized coolant generated in a primary storage space flows into and is stored in the secondary storage container. Radiant heat is blocked by the secondary storage container in a cooled state. Heat transferred to the primary storage container is reduced by a heat conducting path including the secondary storage container.

Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.

Linear fiducials including notches or chevrons with known angles relative to each other are formed such that each branch of a chevron appears in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired.

The present disclosure proposes a crossover-forming deflector array of an electro-optical system for directing a plurality of electron beams onto an electron detection device. The crossover-forming deflector array includes a plurality of crossover-forming deflectors positioned at or at least near an image plane of a set of one or more electro-optical lenses of the electro-optical system, wherein each crossover-forming deflector is aligned with a corresponding electron beam of the plurality of electron beams.

Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.

In one embodiment, a multi-charged-particle-beam writing apparatus includes a shaping aperture array plate including a plurality of first apertures through which a charged particle beam passes to form multiple beams, a movable stage on which a writing target substrate is placed, an inspection aperture plate disposed on the stage, the inspection aperture plate including a second aperture through which one of the multiple beams passes, a current detector detecting a current of the beam that has passed through the second aperture of the inspection aperture plate, a deflector deflecting the multiple beams, the deflector controlling deflection of one of the multiple beams such that the one beam is located at a predetermined position in a region including the second aperture and a surrounding region of the second aperture, and a calculator obtaining a beam position based on the beam current detected by the current detector.