Patent classifications
H01J37/30
Time-dependent defect inspection apparatus
An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.
Time-dependent defect inspection apparatus
An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.
STAGE APPARATUS AND CHARGED PARTICLE BEAM APPARATUS INCLUDING STAGE APPARATUS
A stage apparatus includes a lower stage that moves in a Y-axis direction, an upper stage that floats from the lower stage and moves at least in an X-axis direction orthogonal to the Y-axis direction, a heat exchanger that cools a Y table of the lower stage with a refrigerant, and a control device that controls an inclination of the lower stage with reference to the Y table cooled by the heat exchanger.
Substrate processing apparatus
A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.
ANTI-BREAKDOWN ION SOURCE DISCHARGE APPARATUS
An anti-breakdown ion source discharge apparatus includes a discharge chamber, a coil support, an upper insulation fixing block, a discharge component and an ion source chamber. The discharge component includes a radio-frequency coil, a lower conductive connector and an upper conductive connector. The radio-frequency coil is fixed on a coil support base; the coil support base is clamped on an inner wall of the bottom of the ion source base; the coil support is along the circumference of the coil support base; the radio-frequency coil passes through the coil support; the upper conductive connector passes by the radio-frequency coil and the coil support base from the outside of the radio-frequency coil and extends into the bottom of the discharge chamber; and the upper insulation fixing block is sleeved over the upper conductive connector and is fixed on the inner wall of the bottom of the ion source chamber.
HEAT TRANSFER PLATE AND WRITING APPARATUS
A heat transfer plate according to the present embodiment includes a first heat transfer unit transferring heat generated in a member mounted on the first heat transfer unit, the heat being generated due to shaping or controlling of a beam generated by a light source in a decompressed atmosphere, a second heat transfer unit provided around the first heat transfer unit, and a plurality of third heat transfer units making the first heat transfer unit movable with respect to the second heat transfer unit, the plurality of third heat transfer units connecting the first and second heat transfer units.
Electron exit window foil
An electron exit window foil for use with a high performance electron beam generator operating in a corrosive environment is provided. The electron exit window foil comprises a sandwich structure having a film of Ti, a first layer of a material having a higher thermal conductivity than Ti, and a flexible second layer of a material being able to protect said film from said corrosive environment, wherein the second layer is facing the corrosive environment.
Annular cooling fluid passage for magnets
A magnet having an annular coolant fluid passage is generally described. Various examples provide a magnet including a first magnet and a second magnet disposed around an ion beam coupler with an aperture there through. The first and second magnets each including a metal core having a cavity therein, one or more conductive wire wraps disposed around the metal core, and an annular core element configured to be inserted into the cavity, wherein an annular coolant fluid passage is formed between the cavity and the annular core element. Furthermore, the annular core element may have a first diameter and a middle section having a second diameter, the second diameter being less than the first diameter. Other embodiments are disclosed and claimed.
Surface processing apparatus
A surface processing apparatus is an apparatus which performs surface processing on an inspection object 20 by irradiating the inspection object with an electron beam. A surface processing apparatus includes: an electron source 10 (including lens system that controls beam shape of electron beam) which generates an electron beam; a stage 30 on which an inspection object 20 to be irradiated with the electron beam is set; and an optical microscope 110 for checking a position to be irradiated with the electron beam. The current value of the electron beam which irradiates the inspection object 20 is set at 10 nA to 100 A.
MICROSCOPY FEEDBACK FOR IMPROVED MILLING ACCURACY
Methods and apparatus are disclosed for integration of image-based metrology into a milling workflow. A first ion beam milling operation is performed to an edge at a distance from a final target position on a sample. An SEM image of the sample is used to determine a distance between the milled edge and a reference structure on the sample. Based on the determined distance, the ion beam is adjusted to perform a second milling operation to shift the milled edge to the final target position. Extensions to iterative procedures are disclosed. Various geometric configurations and corrections are disclosed. Manufacturing and analytic applications are disclosed in a variety of fields, including read-write head manufacture and TEM sample preparation. Other combinations of imaging and milling tools can be used.