A device for an MeV-based ion beam analysis of a sample includes a vacuum measurement chamber, having at least one detector and a sample observation unit, a vacuum system for generating a vacuum within the vacuum measurement chamber, and an ion beam tube and a focusing system for focusing an ion beam. The device further includes a sample transfer system, comprising a sample manipulator including a sample holder for receiving at least one sample. The device additionally includes an in-coupling system for the vacuum-tight connection of the ion beam tube to the measurement chamber, which comprises an ion beam vacuum feedthrough, at least one receiver for a detector, a receiver for receiving the sample observation unit, and a receiver for receiving the sample transfer system. The in-coupling system represents a direct mechanical connection between the components that are the ion lens system, detector and sample observation unit.

Disclosed herein is a method for cross-section processing and observation, and apparatus therefore, the method including: performing a position information obtaining process of observing the entirety of a sample by using an optical microscope or an electron microscope, and of obtaining three-dimensional position coordinate information of a particular observation target object included in the sample; performing a cross-section processing process of irradiating a particular region in which the object is present by using a focused ion beam based on the information, and of exposing a cross section of the region; performing a cross-section image obtaining process of irradiating the cross section by using an electron beam, and of obtaining a cross-section image of a predetermined size region including the object; and performing a three-dimensional image obtaining process of repeating the cross-section processing process and the cross-section image obtaining process at predetermined intervals in a predetermined direction, and of obtaining a three-dimensional image from obtained multiple cross-section images.

Disclosed herein is a method for cross-section processing and observation, and apparatus therefore, the method including: performing a position information obtaining process of observing the entirety of a sample by using an optical microscope or an electron microscope, and of obtaining three-dimensional position coordinate information of a particular observation target object included in the sample; performing a cross-section processing process of irradiating a particular region in which the object is present by using a focused ion beam based on the information, and of exposing a cross section of the region; performing a cross-section image obtaining process of irradiating the cross section by using an electron beam, and of obtaining a cross-section image of a predetermined size region including the object; and performing a three-dimensional image obtaining process of repeating the cross-section processing process and the cross-section image obtaining process at predetermined intervals in a predetermined direction, and of obtaining a three-dimensional image from obtained multiple cross-section images.

The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.

An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements.

A method for generating an ion beam in an ion implantation process is provided. The method includes supplying a working gas into a first portion of an arc chamber which is separated from a second portion of the arc chamber by an intermediate plate. The method further includes guiding the working gas into the second portion of the arc chamber via a plurality of gas outlets formed at two opposite edges of the intermediate plate. The method also includes generating an ion beam from the working gas in the second portion of the arc chamber.

The system described herein relates to a particle beam apparatus for analyzing and/or for processing an object and to a method for operating a particle beam apparatus. The particle beam apparatus is designed for example as an electron beam apparatus and/or an ion beam apparatus. The particle beam apparatus comprises a beam deflection device, for example an objective lens, which is provided with a first coil and a second coil. The first coil is operated with a first coil current. The second coil is operated with a second coil current. The first coil current and/or the second coil current may always be controlled in such a way that the sum of the first coil current and the second coil current (the summation current) or the difference between the first coil current and the second coil current (the difference current) is controlled to a setpoint value.

The present invention realizes a composite charged particle beam apparatus capable of suppressing a leakage magnetic field from a pole piece forming an objective lens of an SEM with a simple structure. The charged particle beam apparatus according to the present invention obtains an ion beam observation image while passing a current to a first coil constituting the objective lens, and performs an operation of reducing the image shift by passing a current to a second coil with a plurality of current values, and determines a current to be passed to the second coil based on a difference between the operations.

An apparatus for characterizing a focused charged beam is provided. The apparatus includes a plurality of parallel conducting channels and at least one current sensing unit configured to measure current across each of the plurality of parallel conducting channels.

An apparatus for characterizing a focused charged beam is provided. The apparatus includes a plurality of parallel conducting channels and at least one current sensing unit configured to measure current across each of the plurality of parallel conducting channels.