The present disclosure relates to a semiconductor device manufacturing system. The semiconductor device manufacturing system can include a chamber and an ion source in the chamber. The ion source can include an outlet. The ion source can be configured to generate a particle beam. The semiconductor device manufacturing system can further include a grid structure proximate to the outlet of the ion source and configured to manipulate the particle beam. A first portion of the grid structure can be electrically insulated from a second portion of the grid structure.

A semiconductor process system includes a process chamber with a lid. The system includes a heater positioned on the lid and a controller configured to control the heater. The controller operates the heater to provide a selected temperature distribution of the lid.

A power supply system includes a RF generator, a matching network, and a control module. The matching network includes at least one mechanically variable impedance element and at least one electrically variable impedance element. The control module is coupled to the matching network and configured to generate one or more signals to adjust at least one of an impedance of the mechanically variable impedance element or an impedance of the electrically variable impedance element to vary an impedance match between the generator and a load. In other examples, a hybrid variable impedance module includes at least one mechanically variable impedance element, at least one electrically variable impedance element, and a control module. The control module is configured to generate one or more signals to adjust at least one of an impedance of the mechanically variable impedance element or an impedance of the electrically variable impedance element.

A plasma processing apparatus includes: a reaction tube provided in a processing container; a boat that holds a substrate, and is carried into and out from the reaction tube in order to form a film on the substrate; a plasma generation tube that communicates with the reaction tube, and generates plasma from a gas; a gas supply that supplies the gas to the plasma generation tube; electrode installation columns provided to sandwich the plasma generation tube therebetween, and including electrodes, respectively; an RF power supply that is connected to the electrodes, and supplies a radio frequency to the electrodes; a coil provided to be spaced apart from the electrodes in the electrode installation columns; and a DC power supply that is connected to the coil, and supplies a direct current to the coil.

There is a plasma processing apparatus comprising: a chamber; a substrate support configured to support a substrate and an edge ring; high-frequency power supply configured to generate first high-frequency power via the substrate and second high-frequency power via the edge ring; and bias power supply configured to generate first electric bias energy supplied to the substrate and second electric bias energy supplied to the edge ring, wherein the first electric bias energy and the second electric bias energy have a waveform repeatedly at a cycle, the cycle includes a first period in which voltage of each of the first and second electric bias energies has a positive level with respect to an average value of the voltage within the cycle, and a second period in which the voltage of each of the first and second electric bias energies has a negative level with respect to the average value.

A control circuit for generating a primary alternating current (AC) voltage signal provided to a dielectric barrier discharge (DBD) disk of a three-dimensional printer includes a switching regulator receiving a direct current (DC) voltage signal. The switching regulator modulates the DC voltage signal based on a variable duty cycle to create a modulated DC signal. The control circuit also includes a modulation circuit in electrical communication with the switching regulator. The modulation circuit introduces a frequency component to the modulated DC signal, where the primary AC voltage signal includes a variable duty cycle and a set frequency, and the frequency component introduced into the modulated DC signal is representative of the set frequency of the primary AC voltage.

An ARC evaporator comprising: a cathode assembly comprising a cooling plate (11), a target (1) as cathode element, an electrode arranged for enabling that an arc between the electrode and the front surface (1A) of the target (1) can be established—a magnetic guidance system placed in front of the back surface (1 B) of the target (i) comprising means for generating one or more magnetic whereas: —the borders of the cathode assembly comprise a surrounding shield (15) made of ferromagnetic material, wherein the surrounding shield (15) has a total height (H) in the transversal direction, said total height (H) including a component (C) for causing a shielding effect of magnetic field lines extending in any longitudinal directions, establishing in this manner the borders of the cathode assembly as limit of the extension of the magnetic field lines in any longitudinal direction.

The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.

Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

Embodiments of process kits are provided herein. In some embodiments, a process kit, includes: a deposition ring configured to be disposed on a substrate support, the deposition ring comprising: an annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, and wherein an outer surface of the inner lip extends radially outward and downward from an upper surface of the inner lip to the upper surface of the annular band; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.