A charge carrier multiplier structure for a light sensor, in particular an ultraviolet light sensor, is described. The charge carrier multiplier structure comprises a dielectric sheet having first and second opposite faces and having an array of holes traversing the dielectric sheet between the first and second faces, at least two photocathodes supported on the first face of the dielectric sheet that are electrically isolated from each other and which define at least two sensing regions, each photocathode having a respective work function and quantum yield and having a respective area and at least one anode supported on the second face of the dielectric sheet.

An electron tube includes a photoelectric surface, an avalanche photodiode, a focusing electrode part that accelerates and focuses the electrons E from the photoelectric surface toward the avalanche photodiode, and a casing including a stem provided with the avalanche photodiode. The stem is provided with a light incident hole through which the light is transmitted, and the periphery of the light incident hole is light-shielded by the stem. The focusing electrode part includes a first region provided with a light passage hole, and a second region provided with an electron passage hole that guides the electrons to the avalanche photodiode. The first region is formed on an axial line that connects the light incident hole and the photoelectric surface. The second region is formed on an axial line that connects the photoelectric surface and the avalanche photodiode.

The present invention improves sensitivity of the ultraviolet band of a photoelectric surface. A photoelectric surface includes a window material that transmits ultraviolet rays, a conductive film that is formed on the window material and has conductivity, an intermediate film 4 that is formed on the conductive film and is formed of MgF.sub.2, and a photoelectric conversion film that is formed on the intermediate film 4 and is formed of CsTe. Since the photoelectric surface includes the intermediate film 4 formed of MgF.sub.2, the sensitivity of the ultraviolet band is improved.

The present invention improves sensitivity of the ultraviolet band of a photoelectric surface. A photoelectric surface includes a window material that transmits ultraviolet rays, a conductive film that is formed on the window material and has conductivity, an intermediate film 4 that is formed on the conductive film and is formed of MgF.sub.2, and a photoelectric conversion film that is formed on the intermediate film 4 and is formed of CsTe. Since the photoelectric surface includes the intermediate film 4 formed of MgF.sub.2, the sensitivity of the ultraviolet band is improved.

A method of controlling the performance of a night vision device includes supplying, by a power supply, to a microchannel plate of a light intensifier tube, a control voltage that controls a gain of the microchannel plate, determining an amount of compensation to apply to the control voltage based on a change to the control voltage attributed to a change in temperature of an operating environment of the night vision device, adjusting the control voltage in accordance with the amount of compensation to obtain a compensated control voltage, and supplying, by the power supply, the compensated control voltage to the microchannel plate of the light intensifier tube. The method may further include determining whether the night vision device has been used for a predetermined amount of time, and only after that predetermined amount of time, is the method configured to supply the compensated control voltage.

A method of controlling the performance of a night vision device includes supplying, by a power supply, to a microchannel plate of a light intensifier tube, a control voltage that controls a gain of the microchannel plate, determining an amount of compensation to apply to the control voltage based on a change to the control voltage attributed to a change in temperature of an operating environment of the night vision device, adjusting the control voltage in accordance with the amount of compensation to obtain a compensated control voltage, and supplying, by the power supply, the compensated control voltage to the microchannel plate of the light intensifier tube. The method may further include determining whether the night vision device has been used for a predetermined amount of time, and only after that predetermined amount of time, is the method configured to supply the compensated control voltage.

A secondary electron emissive layer resistant to infiltration and fouling. A barrier layer is formed by atomic layer deposition. The barrier layer may be an emissive layer and/or an interlayer. The barrier layer may form an interlayer that is a part of an electron amplifier positioned between an emissive layer and a resistive layer. The barrier layer is resistive to fluorine migration from either the emissive layer or the resistive layer.

A secondary electron emissive layer resistant to infiltration and fouling. A barrier layer is formed by atomic layer deposition. The barrier layer may be an emissive layer and/or an interlayer. The barrier layer may form an interlayer that is a part of an electron amplifier positioned between an emissive layer and a resistive layer. The barrier layer is resistive to fluorine migration from either the emissive layer or the resistive layer.

A photoelectric tube includes a housing including a light transmitting portion, an electron emitting portion held by a recess provided in the housing, the electron emitting portion including a concave photoelectric surface facing a light transmitting portion side inside the housing, and an electron capturing portion disposed between the light transmitting portion and the photoelectric surface inside the housing. At least a part of the electron capturing portion is located inside a region on an inside of the photoelectric surface.

A photoelectric tube includes a housing including a light transmitting portion, an electron emitting portion held by a recess provided in the housing, the electron emitting portion including a concave photoelectric surface facing a light transmitting portion side inside the housing, and an electron capturing portion disposed between the light transmitting portion and the photoelectric surface inside the housing. At least a part of the electron capturing portion is located inside a region on an inside of the photoelectric surface.