Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.

Provided is an electron emission source including a substrate, a fixed structure provided on the substrate, and an electron emission yarn provided between the substrate and the fixed structure. The fixed structure includes a first portion having a first width and a second portion having a second width greater than the first width, and the electron emission yarn extends on a first sidewall of the first portion of the fixed structure from between the fixed structure and the substrate.

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.

Provided is a linearly polarized ultra-short terahertz wave generating device which has a parabolic barrel mirror installed at one side of a multiple thin film, to generate an ultra-short terahertz wave having single linear-polarized light and uniformly formed output distribution.

Provided is a linearly polarized ultra-short terahertz wave generating device which has a parabolic barrel mirror installed at one side of a multiple thin film, to generate an ultra-short terahertz wave having single linear-polarized light and uniformly formed output distribution.

The present invention generally relates to a field emission light source and specifically to a miniaturized field emission light source that is possible to manufacture in large volumes at low cost using the concept of wafer level manufacturing, i.e., a similar approach as used by integrated circuits (IC) and microelectromechanical systems (MEMS). The invention also relates to a lighting arrangement comprising at least one field emission light source.

The present invention generally relates to a field emission light source and specifically to a miniaturized field emission light source that is possible to manufacture in large volumes at low cost using the concept of wafer level manufacturing, i.e., a similar approach as used by integrated circuits (IC) and microelectromechanical systems (MEMS). The invention also relates to a lighting arrangement comprising at least one field emission light source.

The invention relates to an electron antenna as an anode for a micro- or nano-focus X-ray generation comprising an antenna base and an antenna element arranged on the antenna base such that the antenna element protrudes from a front surface of the antenna base, wherein the antenna is arranged to guide and attract the electrons in its vicinity to the top the antenna element.

The invention relates to an electron antenna as an anode for a micro- or nano-focus X-ray generation comprising an antenna base and an antenna element arranged on the antenna base such that the antenna element protrudes from a front surface of the antenna base, wherein the antenna is arranged to guide and attract the electrons in its vicinity to the top the antenna element.