An antimicrobial device, such as a flashlight, lantern, or lamp, is discussed herein. The antimicrobial device produces light in the ultraviolet (UV) spectrum (i.e., 150-250 nm), including 200-230 nm. The antimicrobial device includes an electron source, an extractor, and a target material. The electron source provides the electrons of sufficient energy to cause a photon to be released, whether by a target or by the electron itself. The extractor extracts the electrons from the electron source. The target material is a component at which the electron is directed. The target material can release a photon having a desired wavelength or within a desired wavelength range or cause the electron to release a photon having a desired wavelength or within a desired wavelength range.

The present invention generally relates to a field emission light source and specifically to a field emission light source adapted to emit ultraviolet (UV) light. The light source has a UV emission member provided with an electron-excitable UV emitting material. The material is at least one of LuPO.sub.3:Pr.sup.3+, Lu.sub.2Si.sub.2O.sub.2:Pr.sup.3+, LaPO.sub.4:Pr.sup.3+, YBO.sub.3:Pr.sup.3+ and YPO.sub.4:Bi.sup.3+.

The present invention generally relates to a field emission light source and specifically to a field emission light source adapted to emit ultraviolet (UV) light. The light source has a UV emission member provided with an electron-excitable UV emitting material. The material is at least one of LuPO.sub.3:Pr.sup.3+, Lu.sub.2Si.sub.2O.sub.2:Pr.sup.3+, LaPO.sub.4:Pr.sup.3+, YBO.sub.3:Pr.sup.3+ and YPO.sub.4:Bi.sup.3+.

A display has a screen which incorporates a light modulator. The screen may be a front projection screen or a rear-projection screen. The screen is illuminated with light from a light source comprising an array of controllable light-emitters. The controllable-emitters and elements of the light modulator may be controlled to adjust the intensity of light emanating from corresponding areas on the screen. The display may provide a high dynamic range.

A display has a screen which incorporates a light modulator. The screen may be a front projection screen or a rear-projection screen. The screen is illuminated with light from a light source comprising an array of controllable light-emitters. The controllable-emitters and elements of the light modulator may be controlled to adjust the intensity of light emanating from corresponding areas on the screen. The display may provide a high dynamic range.

A target for ultraviolet light generation 20A includes a sapphire substrate 21 that transmits ultraviolet light UV, an interlayer 22 that is in contact with the sapphire substrate 21, includes oxygen atoms and aluminum atoms in a composition, and transmits ultraviolet light UV, and a luminous layer 23 that is provided on the interlayer 22, includes oxide crystals containing rare earth elements to which an activator agent is added, and receives electron beams EB so as to generate ultraviolet light UV.

A target for ultraviolet light generation 20A includes a sapphire substrate 21 that transmits ultraviolet light UV, an interlayer 22 that is in contact with the sapphire substrate 21, includes oxygen atoms and aluminum atoms in a composition, and transmits ultraviolet light UV, and a luminous layer 23 that is provided on the interlayer 22, includes oxide crystals containing rare earth elements to which an activator agent is added, and receives electron beams EB so as to generate ultraviolet light UV.

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.