Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

The system described herein relates to a gas feed device having a first precursor reservoir that receives a first precursor and having a second precursor reservoir that receives a second precursor, a feed unit that feeds a gaseous state of the first precursor and/or a gaseous state of the second precursor onto a surface of an object. A first line device is arranged between the first precursor reservoir and the feed unit. A second line device is arranged between the second precursor reservoir and the feed unit. A first valve is arranged between the first line device and the feed unit. A second valve is arranged between the second line device and the feed unit. A control valve for the feed of the gaseous state of the first precursor and/or the gaseous state of the second precursor is connected to the first valve, the second valve and the feed unit.

Provided is a substrate support unit including an electrostatic chuck configured to fix a wafer, an insulating isolation unit, which is arranged below the electrostatic chuck and is configured to insulate the electrostatic chuck, and a ground plate arranged below the insulating isolation unit, wherein the electrostatic chuck, the insulating isolation unit, and the ground plate are spaced apart from each other in a vertical direction, and a lower surface of the electrostatic chuck, a surface of the insulating isolation unit, or a surface of the ground plate has hydrophobicity.

The inventive concept provides a substrate support unit. The substrate support unit includes a susceptor supporting the substrate and having a pinhole formed vertically; and a lift pin unit configured to load and unload the substrate on the susceptor, and wherein the lift pin unit includes: a lift pin vertically movable along the pinhole; a support vertically movable by a driving unit; a pin holder connecting the support and the lift pin, and wherein the lift pin is pivotably connected to the pin holder and the pin holder is laterally movable with respect to the support.

Disclosed herein is a temperature actuated valve, including a stationary member and a movable member, wherein the stationary member is configured to receive the movable member. A first flow path is defined between an outer surface of the stationary member and an inner surface of a housing and a second flow path defined by and within the movable member. The temperature actuated valve further includes at least one temperature actuated member having a first end seated against a base of the stationary member and a second end seated against a base of the movable member. The temperature actuated valve further includes a bias member having a first end connected to the base of the stationary member and a second end connected to the base of the movable member, the at least one temperature actuated member configured to compress at a first temperature and expand at a second temperature.

Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

A plasma processing apparatus including a processing chamber having one or more sidewalls and a dome is provided. The plasma processing apparatus includes a workpiece support disposed in the processing chamber configured to support a workpiece during processing, an induction coil assembly for producing a plasma in the processing chamber, a Faraday shield disposed between the induction coil assembly and the dome, the Faraday shield comprising an inner portion and an outer portion, and a thermal management system. The thermal management system including one or more heating elements configured to heat the dome, and one or more thermal pads disposed between an outer surface of the dome and the heating elements, wherein the one or more thermal pads are configured to facilitate heat transfer between the one or more heating elements and the dome. Thermal management systems and methods for processing workpieces are also provided.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing a treating space; a support unit supporting a substrate at the treating space; a gas supply unit configured to introduce a gas to the treating space; a plasma source configured to provide an energy for exciting a gas introduced to the treating space to a plasma; an exhaust unit configured to exhaust an atmosphere within the treating space to an outside of the treating space; and a heating source positioned above the support unit, and wherein the heating source applies a heating energy in a pulse form to the substrate.

A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.

A sample holder (19) includes a base portion (41), a sample carrying portion (42), a rotation guide portion (43), a cooling stage (46), a connection member (47), a first support portion, and a fixing guide portion (48). The base portion (41) is configured to be fixed to a stage (12), which is configured to be driven to rotate by a stage driving mechanism (13). The rotation guide portion (43) is configured to guide synchronous rotation of the base portion (41) and the sample carrying portion (42). The cooling stage (46) is configured to cool a sample (S). The connection member (47) is configured to be connected to the cooling stage (46). The first support portion is configured to support the base portion (41), which is configured to be driven to rotate by the stage (12).