A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EU mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

In order to control a charge amount on a sample surface to a desired value before calculating a frame integration image, the invention provides a charged particle beam device including: a charged particle beam source configured to irradiate a sample with a charged particle beam; a deflector configured to scan an observation region of the sample with the charged particle beam; a detector configured to detect a charged particle emitted from the sample due to scanning with the charged particle beam; an image generation unit configured to generate a frame image of the observation region based on an observation signal output from the detector; and a scanning suspension time setting unit configured to set a scanning suspension time, which is a time during which scanning of the observation region with the charged particle beam is suspended after a frame image is generated, in which the image generation unit calculates a frame integration image by integrating frame images generated with the scanning suspension time interposed.

To provide a functional membrane for ion beam transmission capable of enhancing ion beam transmittance and improving beam emittance. A functional membrane for ion beam transmission according to the present invention is used in a beam line device through which an ion beam traveling in one direction passes and has a channel. The axis of the channel is substantially parallel to the travel direction of the ion beam.

A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.

The purpose of the present invention is to provide a charged-particle beam device capable of stable performance of processes such as a measurement or test, independent of fluctuations in sample electric electric potential or the like. To this end, this charged-particle beam device comprises an energy filter for filtering the energy of charged particles released from the sample and a deflector for deflecting the charged particles released from the sample toward the energy filter. A control device generates a first image on the basis of the output of a detector, adjusts the voltage applied to the energy filter so that the first image reaches a prescribed state, and calculates deflection conditions for the deflector on the basis of the post-adjustment voltage applied to the energy filter.

Methods and a system of an ion implantation system are configured for increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Ions having a first charge state are provided from an ion source and are selected into a first RF accelerator and accelerated in to a first energy. The ions are stripped to convert them to ions having various charge states. A charge selector receives the ions of various charge states and selects a final charge state at the first energy. A second RF accelerator accelerates the ions to final energy spectrum. A final energy filter filters the ions to provide the ions at a final charge state at a final energy to a workpiece.

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

To provide a charged particle beam device which enables observation and evaluation of the surface and the inside of a sample with low damage to the sample, the charged particle beam device has: a charged particle beam source 2; a sample table 9 in which the sample 210 is placed; a charged particle beam optical system which pulsates a charged particle beam 100 and irradiates the charged particle beam to the sample at an acceleration voltage within a range of 0 kV to 5 kV; a split distance selector 125 for selecting a measurement object of the sample; and a split distance setting unit 124 for setting a split distance in one line scanning of the charged particle beam on the sample.

A method of generating a result image of an object using a particle beam system includes recording multiple primary images of a region of the object using the particle beam system. Recording of each of the primary images includes scanning the primary particle beam along a scan direction across the region and detecting secondary particles generated thereby. The scan directions used for recording at least one pair of two of the primary images differ at least by a first threshold value of at least 10. The method also includes generating, based on the multiple primary images, the result image representing the region of the object.

A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.