A system for grounding a mask using a grounding component are provided. Some embodiments of the system include a grounding component comprising a base and an extension protruding from the base and comprising a conductive prong configured to contact a conductive layer of the mask. Some embodiments of the system include a plurality of conductive prongs configured to contact multiple positions of a conductive layer of the mask. Some other embodiments of the system include an extension comprising various shapes.

A high-quality image is acquired while maintaining an improvement in throughput of image acquisition (measurement (length measurement)) in a charged particle beam system including a charged particle beam device and a computer system configured to control the charged particle beam device. The charged particle beam device includes an objective lens, a sample stage, and a backscattered electron detector that is disposed between the objective lens and the sample stage and that adjusts a focus of a charged particle beam with which a sample is irradiated. The computer system adjusts a value of an electric field on the sample in accordance with a change in a voltage applied to the backscattered electron detector.

A multi-beam charged particle microscope system, having a mirror mode of operation, can be operated to record a stack of images in a mirror imaging mode. The stack of images comprises at least two images of two different settings of at least on multi-aperture element, for example a focus stack, which allows the multi-beam charged particle microscope system to be inspected and recalibrated thoroughly. Related methods computer program products are disclosed.

According to one aspect of the present invention, an electron beam apparatus includes charge amount distribution operation processing circuitry that operates a charge amount distribution of an irradiation region in a case that a substrate is irradiated with an electron beam using a combined function combining a first exponential function having an inflection point and at least one of a first-order proportional function and a second exponential function that converges and depending on a pattern area density; positional displacement operation processing circuitry that operates a positional displacement of an irradiation pattern formed due to irradiation of the electron beam using the charge amount distribution obtained; correction processing circuitry that corrects an irradiation position using the positional displacement; and an electron beam column including an emission source that emits the electron beam and a deflector that deflects the electron beam to irradiate a corrected irradiation position with the electron beam.

A charged particle beam apparatus includes a charged particle source, a separator, a charged particle beam irradiation switch, and a control device. The separator is inserted into a charged particle optical system and deflects a traveling direction of a charged particle beam out of an optical axis of the charged particle optical system or deflects the traveling direction in the optical axis of the charged particle optical system. The charged particle beam irradiation switch absorbs the charged particle beam deflected out of the optical axis of the charged particle optical system or reflects the charged particle beam toward the separator. The control device controls a charged particle beam irradiation switch.

A charged-particle beam exposure method includes providing a sample that has patterns having shot densities different from each other, using the sample to obtain pattern drift values correlated with the shot densities, and irradiating the sample with a charged-particle beam to perform an exposure process on the sample. The irradiating of the sample with the charged-particle beam is carried out while a deflection voltage, which is applied to the charged-particle beam to deflect the charged-particle beam, is corrected based on the pattern drift value corresponding to a shot density of a pattern to be formed on the sample.

The invention comprises a method and apparatus for slowing positively charged particles, comprising the steps of: (1) transporting the positively charged particles from an accelerator, along a beam transport line, and into a nozzle system; (2) placing a first liquid in a first chamber in a beam path of the positively charged particles; (3) placing a second liquid in a second chamber in the beam path of the positively charged particles; (4) moving the first and second chamber with the nozzle system; (5) slowing the positively charged particles using the first liquid and the second liquid; (6) moving the first chamber in a first direction to yield a longer first pathlength of the positively charged particles through the first chamber; and (7) moving the second chamber opposite the first direction to yield a longer second pathlength of the positively charged particles through the second chamber.

Described is a method comprising directing an ultra-low voltage electron beam to a surface of a first insulating layer. The first insulating layer is disposed on a second insulating layer. The method includes modifying, by the application of the ultra-low voltage electron beam, the surface of the first insulating layer to selectively switch an interface between a first state having a first electronic property and a second state having a second electronic property.

Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.