An ion implantation system including an ion implanter, a dopant source gas supply system and a monitoring system is provided. The ion implanter is inside a housing and includes an ion source unit. The dopant source gas supply system includes a first and a second dopant source gas storage cylinder in a gas cabinet outside of the housing and configured to supply a dopant source gas to the ion source unit, and a first and a second dopant source gas supply pipe coupled to respective first and second dopant source gas storage cylinders. Each of the first and second dopant source gas supply pipes includes an inner pipe and an outer pipe enclosing the inner pipe. The monitoring system is coupled to the outer pipe of each of the first and the second dopant source gas supply pipes.

Some embodiments provide a magnetron sputtering apparatus including a vacuum chamber within which a controlled environment may be established, a target comprising one or more sputterable materials, wherein the target includes a racetrack-shaped sputtering zone that extends longitudinally along a longitudinal axis and comprises a straightaway area sandwiched between a first turnaround area and a second turnaround area, a gas distribution system that supplies a first gas mixture to the first turnaround area and/or the second turnaround area and supplies a second gas mixture to the straightaway area, wherein the first gas mixture reduces a sputtering rate relative to the second gas mixture. In some cases, the first gas mixture includes inert gas having a first atomic weight and the second gas mixture includes inert gas having a second atomic weight, wherein the second atomic weight is heavier than the first atomic weight.

The invention provides an electron beam apparatus that reduces a time required for an electron gun chamber to which a sputter ion pump and a non-evaporable getter pump are connected to reach an extreme high vacuum state. The electron beam apparatus includes an electron gun configured to emit an electron beam and the electron gun chamber to which the sputter ion pump and the non-evaporable getter pump are connected. The electron beam apparatus further includes a gas supply unit configured to supply at least one of hydrogen, oxygen, carbon monoxide, and carbon dioxide to the electron gun chamber.

Disclosed herein are specimen imaging systems, comprising: a sample stage in a vacuum environment, the sample stage configured to support a specimen; an electron beam generator configured to focus an electron beam on a first predetermined location on the specimen; a nanospray dispenser configured to dispense a nanospray onto a second predetermined location on the specimen; a mass spectrometer; and an extraction conduit configured to extract a plume of charged particles generated as a result of contact between the nanospray and the specimen and deliver the charged particles to the mass spectrometer. The system can create a topological and chemical map of the specimen by analyzing at least a portion of the specimen with a mass spectrometer to determine a chemical composition of the specimen at the second predetermined location and analyzing at least a portion of the specimen with the electron beam to determine a surface topology.

A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.

Described herein is a technique capable of suppressing an adhesion of deposits to an inside of a reaction vessel of a substrate processing apparatus. According to one aspect, there is provided a substrate processing apparatus including: a substrate retainer provided with a substrate support region; a heat insulator provided below the substrate support region; and a reaction vessel of a cylindrical shape in which the substrate retainer and the heat insulator are accommodated, wherein the reaction vessel includes: an auxiliary chamber protruding outward in a radial direction of the reaction vessel and extending along an extending direction from at least a position below an upper end of the heat insulator to a position facing the substrate support region; and a first cover provided in the auxiliary chamber along a plane perpendicular to the extending direction of the auxiliary chamber so as to divide an inner space of the auxiliary chamber.

The device for observing permeation and diffusion path of observation target gas includes: a scanning electron microscope 15; an observation target ion detecting unit 20; an observation target gas supply unit 19; a diaphragm-type sample holder 12, to which the sample is mounted in attachable/detachable state, as a diaphragm dividing between the analysis chamber 11 and the observation target gas pipe 14; and a control unit 50. The control unit acquires a SEM image and at the same time detects the observation target gas, which diffuses within the sample and is discharged to the surface of the sample, by electron stimulated desorption, in a state where stress is applied to the sample due to differential pressure generated between the analysis chamber and the observation target gas pipe by supplying the observation target gas, and obtains an ESD image of the observation target ions.

A plasma etching method of an embodiment includes performing etching on a silicon-containing film by using plasma of a fluorocarbon gas. The fluorocarbon gas used in the plasma etching method has a composition, regarding carbon and fluorine, represented by C.sub.xF.sub.y, wherein x and y are numbers satisfying x≥7 and y≥x, and includes a benzene ring structure composed of six carbon atoms.

The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.

A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.