The invention relates to a method for producing a sample on an object using a material processing device. The invention further relates to a computer program product and a material processing device for carrying out the method. The method comprises guiding a light beam over a surface of the object in a first direction along a first line, with material of the object being ablated when the light beam is guided over the surface of the object, changing the first direction into a second direction, guiding the light beam over the surface of the object in the second direction along a second line, with material of the object being ablated when the light beam is guided over the surface of the object along the second line, wherein the light beam is provided in pulsed fashion and is guided onto the surface of the object in such a way that the light beam ablates material from the object in a first operational state of the light beam device and that the light beam is not guided onto the object in a second operational state, and wherein the sample is produced in the first operational state by ablating material from the object.

A carrier grid with integrated gas delivery system for use in a charged particle beam system (CPB). The carrier grid has a body with an internal reservoir for storing a gas. A post extends from the body with an end for supporting a sample to be operated upon, and an outlet tip extends from the end of the post. A channel extends from the reservoir, through the post and ends in the outlet tip, where the outlet tip seals the stored gas in the body. Cutting the outlet tip near its base, with a focused ion beam (FIB) by example, will open the channel to the CPB chamber, allowing the prestored gas within the reservoir to escape. A FIB or electron beam directed at the junction of the sample positioned near the post will cause deposition and subsequent attachment of the sample to the post in presence of the gas.

A system, method, and apparatus for heating and cooling a component in chamber enclosing a chamber volume. Vacuum and purge gas ports are in fluid communication with the chamber volume. A heater apparatus selectively heats the heated apparatus to a process temperature. A vacuum valve provides selective fluid communication between a vacuum source and the vacuum port. A purge gas valve provides selective fluid communication between a purge gas source for a purge gas and the purge gas port. A controller controls the heater apparatus, vacuum and purge gas valves and to selectively flow the purge gas to the chamber volume when an equipment-safe temperature is reached. When an operator-safe temperature is reached, access to the chamber volume through an access port by an operator is permitted.

An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.

A fluid metering system for gas independent pressure and flow control through an electron microscope sample holder includes: a pressure control system that supplies gas; an inlet line providing gas from the pressure control system to the sample holder; an outlet line receiving gas from the sample holder; and a variable leak valve that controls gas flow in the outlet line. The gas flows from an upstream tank of the pressure control system through the sample holder and variable leak valve to a downstream tank of the pressure control system due to the pressure difference of the two tanks as the variable leak valve meters flow in the outlet line. Flow rates are established by monitoring pressure changes at source and collection tanks of known volumes with gas independent pressure gauges. A method of directing the gas flow to a residual gas analyzer (RGA) is also presented.

The invention relates to a method for ablating a material (1) from a material unit (502) and for arranging the material (1) on an object (125), the object (125) being arranged in a particle beam apparatus. Further, the invention relates to a computer program product, and to a particle beam apparatus for carrying out the method. The method comprises feeding a particle beam with charged particles onto the material (1), wherein the material (1) is arranged on the material unit (502) and/or wherein the material unit (502) is formed from the material (1), wherein the material (1) is ablatable from the material unit (502) and wherein the material (1) is arranged on the material unit (502) at a distance from the object (125).

Further, the method comprises ablating the ablatable material (1) arranged on the material unit (502) from the material unit (502) using the particle beam, and arranging the ablated material (514) on the object (125).

A method and system for fluorine ion implantation is described, where a fluorine compound capable of forming multiple fluorine ionic species is introduced into an ion implanter at a predetermined flow rate. Fluorine ionic species are generated at a predetermined arc power and source magnetic field, providing an optimized beam current for the desired fluorine ionic specie. The desired fluorine ionic specie, such as one having multiple fluorine atoms, is implanted into the substrate under the selected operating conditions.

A gas feed device includes a feed unit that feeds a gaseous state of a first precursor and/or a gaseous state of a second precursor, a first line device that conducts the gaseous state of the first precursor to the feed unit and a second line device that conducts the gaseous state of the second precursor to the feed unit. A first valve is arranged between the first line device and the feed unit. A second valve is arranged between the second line device and the feed unit. A control valve is connected to the first valve and is arranged between the first valve and the feed unit. The control valve is connected to the second valve and is arranged between the second valve and the feed unit. The first valve, the second valve and/or the control valve may be magnetic valve(s).

An ion source for extracting a ribbon ion beam with improved height uniformity is disclosed. Gas nozzles are disposed in the chamber proximate the extraction aperture. The gas that is introduced near the extraction aperture serves to shape the ribbon ion beam as it is being extracted. For example, the height of the ribbon ion beam may be reduced by injecting gas above and below the ion beam so as to compress the extracted ion beam in the height direction. In some embodiments, the feedgas is introduced near the extraction aperture. In other embodiments, a shield gas, such as an inert gas, is introduced near the extraction aperture.

A gas feed device is operated, including displaying a functional parameter of the gas feed device. A gas feed device may carry out the operation, and a particle beam apparatus may include the gas feed device. A method may include predetermining and/or measuring a current temperature of a precursor reservoir of the gas feed device using a temperature measuring unit, where the precursor reservoir contains a precursor to be fed onto an object, loading a flow rate of the precursor through an outlet of the precursor reservoir from a database into a control unit, said flow rate being associated with the current temperature of the precursor reservoir, and (i) displaying the flow rate on the display unit and/or (ii) determining the functional parameter of the precursor reservoir depending on the flow rate using the control unit and informing a user of the gas feed device about the determined functional parameter.