The invention relates to an image capture assembly and method for use in an electron backscatter diffraction (EBSD) system. An image capture assembly comprises a scintillation screen (10) including a predefined screen region (11), an image sensor (20) comprising an array of photo sensors and a lens assembly (30). The image capture assembly is configured to operate in at least a first configuration or a second configuration. In the first configuration the lens assembly (30) projects the predefined region (11) of the scintillation screen (10) onto the array and in the second configuration the lens assembly (30) projects the predefined region (11) of the scintillation screen (10) onto a sub-region (21) of the array. In each of the first and second configurations the field of view of the lens assembly (30) is the same.

A high-quality image is acquired while maintaining an improvement in throughput of image acquisition (measurement (length measurement)) in a charged particle beam system including a charged particle beam device and a computer system configured to control the charged particle beam device. The charged particle beam device includes an objective lens, a sample stage, and a backscattered electron detector that is disposed between the objective lens and the sample stage and that adjusts a focus of a charged particle beam with which a sample is irradiated. The computer system adjusts a value of an electric field on the sample in accordance with a change in a voltage applied to the backscattered electron detector.

Embodiments comprise a system created through fabricating a lens array through which lasers are emitted. The lens array may be fabricated in the semiconductor substrate used for fabricating the lasers or may be a separate substrate of other transparent material that would be aligned to the lasers. In some embodiments, more lenses may be produced than will eventually be used by the lasers. The inner portion of the substrate may be formed with the lenses that will be used for emitting lasers, and the outer portion of the substrate may be formed with lenses that will not be used for emitting lasersrather, through etching these additional lenses, the inner lenses may be created with a higher quality.

A beam current transmission system and method are disclosed. The beam current transmission system comprises an extraction device, a mass analyzer, a divergent element, a collimation element and a speed change and turning element, wherein an analysis plane of the mass analyzer is perpendicular to a convergent plane of the extracted beam, and after entering an entrance, the beam is converged on a convergent point in a plane perpendicular to the analysis plane, and then is diverged from the convergent point and transmitted to the divergent element from an exit; the collimation element is used for parallelizing the beam in a transmission plane of the beam; and the speed change and turning element is used for enabling the beam to change speed so as to achieve a target energy while the beam is deflected so that the transmission direction of the beam changes by a first pre-set angle. Through the coordinated cooperation among a plurality of beam current optical elements, a relatively wider distribution can be formed in a vertical plane, so the invention is suitable to the processing of a wafer with a large size and also ensure better injection uniformity on the premise of avoiding energy contamination.

A focused ion beam system is offered which can make a focal adjustment without relying on the structure of a sample while suppressing damage to the sample to a minimum. Also, a method of making this focal adjustment is offered. The focused ion beam system has an ion source for producing an ion beam, a lens system for focusing the beam onto the sample, a detector for detecting secondary electrons emanating from the sample, and a controller for controlling the lens system. The controller is operative to provide control such that the sample is irradiated with the ion beam without scanning the beam and that a focus of the ion beam is varied by varying the intensity of the objective lens during the ion beam irradiation. Also, the controller measures the intensity of a signal indicating secondary electrons emanating from the sample while the intensity of the objective lens is being varied. Furthermore, the controller makes a focal adjustment of the ion beam on the basis of the intensity of the objective lens obtained when the measured intensity of the signal indicating secondary electrons is minimal.

A beam current transmission system and method are disclosed. The beam current transmission system comprises an extraction device, a mass analyzer, a divergent element, a collimation element and a speed change and turning element, wherein an analysis plane of the mass analyzer is perpendicular to a convergent plane of the extracted beam, and after entering an entrance, the beam is converged on a convergent point in a plane perpendicular to the analysis plane, and then is diverged from the convergent point and transmitted to the divergent element from an exit; the collimation element is used for parallelizing the beam in a transmission plane of the beam; and the speed change and turning element is used for enabling the beam to change speed so as to achieve a target energy while the beam is deflected so that the transmission direction of the beam changes by a first pre-set angle. Through the coordinated cooperation among a plurality of beam current optical elements, a relatively wider distribution can be formed in a vertical plane, so the invention is suitable to the processing of a wafer with a large size and also ensure better injection uniformity on the premise of avoiding energy contamination.

A radiation analyzer includes a primary ray source that generates primary rays, an optical system applies the primary rays emitted from the primary ray source to a sample, an energy-dispersive radiation detector that detects radiation that has been generated from the sample when the primary rays have been applied to the sample, and a support that supports the radiation detector so that the tilt of the center axis (C) of the radiation detector with respect to the optical axis (Z) of the optical system can be changed.

A multi-electron beam writing apparatus includes a light source array to include plural light sources and generate plural first lights, a multi-lens array to include plural first lenses, and to divide the plural first lights into plural second lights by that each of the plural first lights illuminates a corresponding lens set of plural lens sets each composed of plural second lenses being a portion of the plural first lenses and by that each of lenses, being at least a part of the plural second lenses, is irradiated with two or more first lights of the plural first lights, a photoemissive surface to receive the plural second lights through its upper surface, and emit multiple photoelectron beams from its back surface, and a blanking aperture array mechanism to perform an individual blanking control by individually switching between ON and OFF of each of the multiple photoelectron beams.

Systems and methods of measuring of optimizing collection efficiency of secondary charged particles include a multi-beam inspection apparatus configured to scan a sample and including a lens, a detector configured to receive a plurality of secondary charged-particle beams in response to scanning the sample, and a controller including circuitry communicatively coupled to the multi-beam inspection apparatus and the detector, configured to: focus the lens to adjust sizes of secondary beam spots, wherein the secondary beam spots are formed by the plurality of secondary charged-particle beams on the detector; cause, for each secondary charged-particle beam of the plurality of secondary charged-particle beams, outlier charged particles of the each secondary charged-particle beam to not be detected by the detector; and refocus the lens to adjust currents of a portion of the plurality of secondary charged-particle beams detected by the detector, wherein the outlier charged particles do not contribute to the currents.