Methods for using electron diffraction holography to investigate a sample, according to the present disclosure include the initial steps of emitting a plurality of electrons toward the sample, forming the plurality of electrons into a first electron beam and a second electron beam, and modifying the focal properties of at least one of the two beams such that the two beams have different focal planes. Once the two beams have different focal planes, the methods include focusing the first electron beam such that it has a focal plane at or near the sample, and focusing the second electron beam so that it is incident on the sample, and has a focal plane in the diffraction plane. An interference pattern of the first electron beam and the diffracted second electron beam is then detected in the diffraction plane, and then used to generate a diffraction holograph.

A charged particle beam apparatus acquires an image that is not affected by movement of a stage at a high speed. The apparatus includes: a charged particle source for irradiating a sample with a charged particle beam; a stage on which the sample is placed; a measurement unit for measuring a movement amount of the stage; a deflector; a deflector offset control unit, which is a feedback control unit for adjusting a deflection amount of the deflector according to the movement amount of the stage; a plurality of detectors for detecting secondary charged particles emitted from the sample by irradiation of the charged particle beam; a composition ratio calculation unit that calculates composition ratios of signals output from the detectors based on the deflection amount adjusted by the feedback control unit; and an image generation unit for generating a composite image by compositing the signals using the composition ratio.

A fast method of imaging a 3D sample with a multi-beam particle microscope includes the following steps: providing a layer of the 3D sample; determining a feature size of features included in the layer; determining a pixel size based on the determined feature size in the layer; determining a beam pitch size between individual beams in the layer based on the determined pixel size; and imaging the layer of the 3D sample with a setting of the multi-beam particle microscope based on the determined pixel size and based on the determined beam pitch size.

Methods for using electron diffraction holography to investigate a sample, according to the present disclosure include the initial steps of emitting a plurality of electrons toward the sample, forming the plurality of electrons into a first electron beam and a second electron beam, and modifying the focal properties of at least one of the two beams such that the two beams have different focal planes. Once the two beams have different focal planes, the methods include focusing the first electron beam such that it has a focal plane at or near the sample, and focusing the second electron beam so that it is incident on the sample, and has a focal plane in the diffraction plane. An interference pattern of the first electron beam and the diffracted second electron beam is then detected in the diffraction plane, and then used to generate a diffraction holograph.

Methods and systems for investigating a sample using a dual beam bifocal charged particle microscope, according to the present disclosure include emitting a plurality of charged particles toward the sample, forming the plurality of charged particles into a first charged particle beam and a second charged particle beam, and modifying the focal properties of at least one of the first charged particle beam and the second charged particle beam. The focal properties of at least one of the first charged particle beam and the second charged particle beam is modified such that the corresponding focal planes of the first charged particle beam and the second charged particle beam are different.

Methods for using a single electron microscope system for investigating a sample with TEM and STEM techniques include the steps of emitting electrons toward the sample, forming the electrons into a two beams, and then modifying the focal properties of at least one of the two beams such that they have different focal planes. Once the two beams have different focal planes, the first electron beam is focused such that it acts as a STEM beam that is focused at the sample, and the second electron beam is focused so that it acts as a TEM beam that is parallel beam when incident on the sample. Emissions resultant from the STEM beam and the TEM beam being incident on the sample can then be detected by a single detector or detector array and used to generate a TEM image and a STEM image.

An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

There is provided an ultrafast electron diffraction apparatus including: a photoelectron gun configured to emit an electron beam; a bending portion for emitting the electron beam emitted from the photoelectron gun by changing a travel direction of the electron beam by a predetermined angle; and a sample portion including a sample to be analyzed by the electron beam emitted from the bending portion. The electron beam reaches the sample portion in a state that a pulse of the electron beam is compressed and the timing jitter between the pumping light and probe electron pulse is completely reduced as the travel direction of the electron beam is changed by the predetermined angle through the bending portion.

A test control port (TCP) includes a state machine SM, an instruction register IR, data registers DRs, a gating circuit and a TDO MX. The SM inputs TCI signals and outputs control signals to the IR and to the DR. During instruction or data scans, the IR or DRs are enabled to input data from TDI and output data to the TDO MX and the top surface TDO signal. The bottom surface TCI inputs may be coupled to the top surface TCO signals via the gating circuit. The top surface TDI signal may be coupled to the bottom surface TDO signal via TDO MX. This allows concatenating or daisy-chaining the IR and DR of a TCP of a lower die with an IR and DR of a TCP of a die stacked on top of the lower die.

In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (12), scanning deflectors (17 and 18) configured to scan a charged particle beam (20) emitted from the charged particle gun (12) onto a sample (21), detectors (40 and 41) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit (42) configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller (45) configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.