The present invention relates to an apparatus and method for analyzing the energy of backscattered electrons generated from a specimen. The apparatus includes: an electron beam source (101) for generating a primary electron beam; an electron optical system (102, 105, 112) configured to direct the primary electron beam to a specimen while focusing and deflecting the primary electron beam; and an energy analyzing system configured to detect an energy spectrum of backscattered electrons emitted from the specimen. The energy analyzing system includes: a Wien filter (108) configured to disperse the backscattered electrons; a detector (107) configured to measure the energy spectrum of the backscattered electrons dispersed by the Wien filter (108); and an operation controller (150) configured to change an intensity of a quadrupole field of the Wien filter (108), while moving a detecting position of the detector (107) for the backscattered electrons in synchronization with the change in the intensity of the quadrupole field.

An apparatus includes: a structure having a lumen for accommodating a beam (e.g., electron beam, proton beam, or a charged particle beam), wherein the structure is a component of a medical radiation machine having a target for interaction with the beam to generate radiation; and a first beam position monitor comprising a first electrode and a second electrode, the first electrode being mounted to a first side of the structure, the second electrode being mounted to a second side of the structure, the second side being opposite from the first side; wherein the first beam position monitor is located upstream with respect to the target.

A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.

A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.

A charged particle beam writing method includes acquiring the deviation amount of the deflection position per unit tracking deflection amount with respect to each tracking coefficient of a plurality of tracking coefficients having been set for adjusting the tracking amount to shift the deflection position of a charged particle beam on the writing target substrate in order to follow movement of the stage on which the writing target substrate is placed, extracting a tracking coefficient based on which the deviation amount of the deflection position per the unit tracking deflection amount is closest to zero among the plurality of tracking coefficients, and writing a pattern on the writing target substrate with the charged particle beam while performing tracking control in which the tracking amount has been adjusted using the tracking coefficient extracted.

The purpose of the present invention is to provide a charged-particle beam device capable of stable performance of processes such as a measurement or test, independent of fluctuations in sample electric electric potential or the like. To this end, this charged-particle beam device comprises an energy filter for filtering the energy of charged particles released from the sample and a deflector for deflecting the charged particles released from the sample toward the energy filter. A control device generates a first image on the basis of the output of a detector, adjusts the voltage applied to the energy filter so that the first image reaches a prescribed state, and calculates deflection conditions for the deflector on the basis of the post-adjustment voltage applied to the energy filter.

An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

A fast method of imaging a 3D sample with a multi-beam particle microscope includes the following steps: providing a layer of the 3D sample; determining a feature size of features included in the layer; determining a pixel size based on the determined feature size in the layer; determining a beam pitch size between individual beams in the layer based on the determined pixel size; and imaging the layer of the 3D sample with a setting of the multi-beam particle microscope based on the determined pixel size and based on the determined beam pitch size.

According to one embodiment, provided is a deflection sensitivity calculation method for calculating deflection sensitivity of a deflector in an electron beam irradiation apparatus that irradiates an irradiation object on a stage with an electron beam by causing the deflector to deflect the electron beam, the deflection sensitivity calculation method including: irradiating an area that covers an adjustment plate with an electron beam by scanning a deflection parameter that controls deflection of the deflector in a predetermined width; detecting a current value detected from the adjustment plate; forming an image corresponding to the detected current value, a number of pixels of the image being known; calculating the number of pixels of a portion corresponding to the adjustment plate in the formed image; and calculating the deflection sensitivity of the deflector.

Embodiments herein provide systems and methods for multi-area selecting etching. In some embodiments, a system may include a plasma source delivering a plurality of angled ion beams to a substrate, the substrate including a plurality of devices. Each of the plurality of devices may include a first angled grating and a second angled grating. The system may further include a plurality of blocking masks positionable between the plasma source and the substrate. A first blocking mask of the plurality of blocking masks may include a first set of openings permitting the angled ion beams to pass therethrough to form the first angled gratings of each of the plurality of devices. A second blocking mask of the plurality of blocking masks may include a second set of openings permitting the angled ion beams to pass therethrough to form the second angled gratings of each of the plurality of devices.