According to one embodiment, an atom probe inspection device includes one or more processors configured to change a two-dimensional position of a detected ion, detect two-dimensional position information of the ion and a flying time of the ion, identify a type of an element of the ion, generate first information under a first condition and second information under a second condition, and generate a reconstruction image of the sample from the first information and the second information.

A multiple electron beam inspection apparatus includes a correction circuit that corrects a partial secondary electron image of partial secondary electron images configuring a secondary electron image and obtained by irradiation with a corresponding primary electron beam of the multiple primary electron beams such that the partial secondary electron image becomes close to a uniform beam partial image when an irradiation region of a primary electron beam corresponding to the partial secondary electron image is irradiated with a uniform beam obtained by equalizing shapes and sizes of all primary electron beams, by using a function for individual correction of each primary electron beam, for each of the plural partial secondary electron images, and an inspection circuit that performs inspection using plural partial secondary electron images each corrected.

A multi-beam inspection apparatus including an improved source conversion unit is disclosed. The improved source conversion unit may comprise a micro-structure deflector array including a plurality of multipole structures. The micro-deflector deflector array may comprise a first multipole structure having a first radial shift from a central axis of the array and a second multipole structure having a second radial shift from the central axis of the array. The first radial shift is larger than the second radial shift, and the first multipole structure comprises a greater number of pole electrodes than the second multipole structure to reduce deflection aberrations when the plurality of multipole structures deflects a plurality of charged particle beams.

According to one aspect of the present invention, a multiple electron beam inspection apparatus includes a reference image generation circuit generating reference images corresponding to the secondary electron images, in accordance with an image generation characteristic of a secondary electron image by irradiation of one beam; and a correction circuit generating corrected reference images in which, on the basis of deviation information between a figure pattern of the secondary electron image by irradiation of the one beam of the multiple primary electron beams and a figure pattern of a secondary electron image by irradiation of another beam different from the one beam of the multiple primary electron beams, a shape of a figure pattern of a reference image corresponding to the figure pattern of the secondary electron image by the irradiation of the another beam in the reference images is corrected.

There is provided a charged particle beam apparatus including: a charged particle source; a condenser lens and an object lens for converging a charged particle beam from the charged particle source and irradiating the converged charged particle beam to a specimen; and plural image shift deflectors for deflecting the charged particle beam. In the charged particle beam apparatus, the deflection of the charged particle beam is controlled using first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes through the center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam to a second optical axis having a predefined incident angle different from the incident angle of the first optical axis.

A multi-electron beam image acquisition apparatus includes a first electrostatic lens and a second electrostatic lens configured to, using one of a table and an approximate expression, dynamically correct the focus position deviation amount deviated from the reference position because of a change of a height position of a surface of a substrate changed along with movement of a stage, and correct one of a rotation change amount and a magnification change amount depending on a focus position deviation amount by interaction; and an image processing circuit configured to, using the one of the table and the approximate expression, correct another of the rotation change amount and the magnification change amount depending on the focus position deviation amount, with respect to a secondary electron image based on a detection signal of multiple secondary electron beams having been detected.

In one embodiment, a data processing method is for processing data in a writing apparatus performing multiple writing by using multiple beams. The data is for controlling an irradiation amount for each beam. The method includes generating irradiation amount data for each of a plurality of layers, the irradiation amount data defining an irradiation amount for each of a plurality of irradiation position, and the plurality of layers corresponding to writing paths in multiple writing, performing a correction process on the irradiation amounts defined in the irradiation amount data provided for each layer, calculating a sum of the irradiation amounts for the respective irradiation positions defined in the corrected irradiation amount data, comparing the sums between the plurality of layers, and determining whether or not an error has occurred in the correction process based on the comparison result.

Disclosed herein is charged particle beam device and a a method of operating a charged particle beam device, comprising forming a plurality of focused charged particle beamlets. Charged particles are directed from a charged particle source to a multi-aperture plate. A plurality of beamlets are passed through a plurality of apertures of the multi-aperture plate. The beamlets include an inner beamlet of charged particles and a plurality of outer beamlets of charged particles. The outer beamlets are focused to form a plurality of outer focal points on a virtual ring having a center along an optical axis, the outer beamlets subjected to a field curvature aberration, such that the virtual ring is axially displaced relative to a virtual focal point of an uncompensated inner beamlet. A compensated inner beamlet is focused to a compensated focal point. The inner beamlet is compensated to form the compensated inner beamlet; and the compensated focal point is coplanar with the virtual ring.

Systems and methods to focus and align multiple electron beams are disclosed. A camera produces image data of light from electron beams that is projected at a fiber optics array with multiple targets. An image processing module determines an adjustment to a voltage applied to a relay lens, a field lens, or a multi-pole array based on the image data. The adjustment minimizes at least one of a displacement, a defocus, or an aberration of one of the electron beams. Using a control module, the voltage is applied to the relay lens, the field lens, or the multi-pole array.

There is provided a method which is for use in a charged particle beam system including an illumination system equipped with an aberration corrector having a plurality of stages of multipole elements and a transfer lens system disposed between the multipole elements, the method being capable of correcting distortion in a shadow of an aperture of the illumination system. The method involves varying excitations of the transfer lens system to correct distortion in the shadow of the aperture of the illumination system.