Patent classifications
H01J2237/18
Charged Particle Beam System and Method of Controlling Charged Particle Beam System
A charged particle beam system includes a sample chamber; a pre-evacuation chamber that is connected to the sample chamber; a first evacuation pump that has a first port connected to the sample chamber, and a second port connected to the pre-evacuation chamber; a second evacuation pump that is connected to the pre-evacuation chamber, an evacuation port, and the sample chamber; and a controller. The controller performs when a sample is introduced into the pre-evacuation chamber, a process of causing the second evacuation pump to evacuate the pre-evacuation chamber; a process of making a determination of whether a vacuum degree inside the pre-evacuation chamber has reached a first vacuum degree, based on power of the second evacuation pump; and a process of causing the first evacuation pump to evacuate the pre-evacuation chamber when the vacuum degree inside the pre-evacuation chamber is determined to have reached the first vacuum degree.
Plasma processing apparatus and semiconductor device manufacturing method
A plasma processing apparatus includes a chamber having an upper wall with a plurality of through holes and a lower wall with an exhaust hole, the chamber defining a plasma processing space; a substrate stage disposed within the chamber, the substrate stage having a seating surface, wherein a substrate is seated on the seating surface; a baffle plate disposed between the upper wall and the substrate stage, the baffle plate having gas distribution holes; a gas supply configured to supply gas into the chamber through the through holes; a pumping device having an exhaust pipe, the exhaust pipe connected to the exhaust hole to control pressure inside the chamber; and a plasma generator configured to generate a first plasma using the gas supplied into the chamber through at least one of the through holes formed in the upper wall.