A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.

A charged particle beam device is described, which includes: a beam source configured to generate a charged particle beam propagating along an optical axis (A); an aperture device with a plurality of apertures configured to create a plurality of beamlets from the charged particle beam; and a field curvature corrector. The field curvature corrector includes: a first multi-aperture electrode with a first plurality of openings having diameters that vary as a function of a distance from the optical axis (A); a second multi-aperture electrode with a second plurality of openings; and an adjustment device configured to adjust at least one of a first electrical potential (U1) of the first multi-aperture electrode and a second electrical potential (U2) of the second multi-aperture electrode. Further, a field curvature corrector and methods of operating a charged particle beam device are described.

An optical system used in a charged particle beam inspection system. The optical system includes one or more optical lenses, and a compensation lens configured to compensate a drift of a focal length of a combination of the one or more optical lenses from a first medium to a second medium.

An apparatus for generating a multiplicity of particle beams includes a particle source, a first multi-aperture plate with a multiplicity of openings, a second multi-aperture plate with a multiplicity of openings, a first particle lens, a second particle lens, a third particle lens 23, and a controller, which supplies each of the first particle lens, the second particle lens and the third particle lens with an adjustable excitation.

A placing table includes an edge ring disposed to surround a substrate; an electrostatic chuck having a first placing surface on which the substrate is placed and a second placing surface on which the edge ring is placed; and an elastic member placed at a position lower than the first placing surface within a gap between an inner circumferential surface of the edge ring and a side surface of the electrostatic chuck between the first placing surface and the second placing surface.

A multi-charged particle beam writing apparatus according to one aspect of the present invention includes a region setting unit configured to set, as an irradiation region for a beam array to be used, the region of the central portion of an irradiation region for all of multiple beams of charged particle beams implemented to be emittable by a multiple beam irradiation mechanism, and a writing mechanism, including the multiple beam irradiation mechanism, configured to write a pattern on a target object with the beam array in the region of the central portion having been set in the multiple beams implemented.

A charged particle beam device is described, which includes: a beam source configured to generate a charged particle beam propagating along an optical axis (A); an aperture device with a plurality of apertures configured to create a plurality of beamlets from the charged particle beam; and a field curvature corrector. The field curvature corrector includes: a first multi-aperture electrode with a first plurality of openings having diameters that vary as a function of a distance from the optical axis (A); a second multi-aperture electrode with a second plurality of openings; and an adjustment device configured to adjust at least one of a first electrical potential (U1) of the first multi-aperture electrode and a second electrical potential (U2) of the second multi-aperture electrode. Further, a field curvature corrector and methods of operating a charged particle beam device are described.

An object of the invention is to correct an aberration or a defocus of an electron beam for irradiation, and control an influence on a deflector by a fluctuation in an electric field of an electrostatic lens. The invention provides a charged particle beam apparatus including a deflector that deflects a charged particle beam with which a specimen is irradiated, an objective lens that focuses the charged particle beam on the specimen, an electrostatic lens that includes a part of the objective lens and to which a voltage for correcting the aberration or the defocus of the charged particle beam is applied, and an constant electric field applying electrode that is provided between the deflector and the electrostatic lens and to which a constant voltage having a same sign with the voltage applied to the electrostatic lens is applied.

A system is disclosed. The system includes a stage assembly configured to receive a specimen and maintain a height of the specimen at a first working distance height during a first characterization mode and an additional working distance height during an additional characterization mode. The system further includes an illumination source configured to generate an illumination beam. The system further includes an illumination arm including a set of optical elements configured to direct a portion of the illumination beam including illumination of a first wavelength to the specimen during the first characterization mode, and direct a portion of the illumination beam including illumination of an additional wavelength to the specimen during the additional characterization mode. The system further includes a detector assembly configured to receive illumination emanated from the specimen, and a controller configured to determine a specimen height value based on the illumination received by the detector assembly.

Assessment systems and methods are disclosed. In one arrangement, charged particles are directed in sub-beams arranged in a multi-beam towards a sample. A plurality of control electrodes define a control lens array. Each control lens in the control lens array is aligned with a sub-beam path of a respective sub-beam of the multi-beam and configured to operate on the respective sub-beam. A plurality of objective electrodes define an objective lens array that directs the sub-beams onto a sample. Objective lenses are aligned with a sub-beam path aligned with a respective control lens. Selectable landing energies are implemented for a sub-beam of the multi-beam by applying corresponding potentials to the control electrodes and the objective electrodes. A controller is configured to select corresponding potentials so a spatial relationship between an image plane of the system and all control electrodes and objective electrodes is the same for each selectable landing energy.