An object of the invention is to accurately correct a deviation in position or angle between observation regions in an imaging device that acquires images of a plurality of sample sections. The imaging device according to the invention identifies a correspondence relationship between the observation regions between the sample sections using a feature point on a first image, corrects a deviation between the sample sections using a second image in a narrower range than the first image, and after reflecting a correction result, acquires a third image having a higher resolution than the second image (see FIG. 6B).

An aberration value estimator has a learned estimation model for estimating an aberration value set based on a Ronchigram. In a machine learning sub-system, a simulation is repeatedly executed while changing a simulation condition, and calculated Ronchigrams are generated in a wide variety and in a large number. By machine learning using the calculated Ronchigrams, the learned estimation model is generated.

Wafer inspection with stable nuisance rates and defect of interest capture rates are disclosed. This technique can be used for discovery of newly appearing defects that occur during the manufacturing process. Based on a first wafer, defects of interest are identified based on the classified filtered inspection results. For each remaining wafer, the defect classifier is updated and defects of interest in the next wafer are identified based on the classified filtered inspection results.

The present invention proposes a pattern measurement tool characterized by being provided with: a charged-particle beam sub-system having a tilt deflector; and a computer sub-system which is connected to the charged-particle beam sub-system and which is for executing measurement of a pattern on the basis of a signal obtained by said charged-particle beam sub-system, wherein the charged-particle beam sub-system acquires at least two signal profiles by scanning beams having at least two incidence angles, the computer sub-system measures the dimension between one end and the other end of the pattern on the basis of the at least two signal profiles, calculates the difference between the two measurements, and calculates the height of the pattern by inputting the difference value determined by said calculation into a relational formula indicating the relation between the height of the pattern and said difference value.

Diffraction patterns of a sample at various tilt angles are acquired by irradiating a region of interest using a first charged particle beam. Sample images are acquired by irradiating the region of interest using a second charged particle beam. The first and second charged particle beams are formed by splitting charged particles generated by a charged particle source.

An edge detection system is disclosed. The edge detection system includes an imaging device configured for imaging a pattern structure to form a first image, wherein the pattern structure includes a predetermined feature, and the imaging device images the pattern structure to generate measured linescan information that includes image noise. The edge detection system includes a processor, coupled to the imaging device, configured to receive the measured linescan information including image noise from the imaging device, wherein the processor is configured to: apply the measured linescan information to an inverse linescan model that relates the measured linescan information to feature geometry information, determine, from the inverse linescan model, feature geometry information that describes feature edge positions of the predetermined feature corresponding to the measured linescan information, determine from the feature geometry information at least one metric that describes a property of the edge detection system.

A wafer topography measurement system can be paired with a scanning electron microscope. A topography threshold can be applied to wafer topography data about the wafer, which was obtained with the wafer topography measurement system. A metrology sampling plan can be generated for the wafer. This metrology sampling plan can include locations in the wafer topography data above the topography threshold. The scanning electron microscope can scan the wafer using the metrology sampling plan and identify defects.

The purpose of the present invention is to provide a charged-particle beam device capable of stable performance of processes such as a measurement or test, independent of fluctuations in sample electric electric potential or the like. To this end, this charged-particle beam device comprises an energy filter for filtering the energy of charged particles released from the sample and a deflector for deflecting the charged particles released from the sample toward the energy filter. A control device generates a first image on the basis of the output of a detector, adjusts the voltage applied to the energy filter so that the first image reaches a prescribed state, and calculates deflection conditions for the deflector on the basis of the post-adjustment voltage applied to the energy filter.

A scanning electron microscope includes a first detector for detecting electrons, a second detector for detecting X-rays, and an image processor section for causing first markers indicative of imaging positions and second markers indicative of analysis positions to be displayed on a display device such that the first and second markers are placed on a whole image of a sample. The image processor section alters the magnification of the whole image based on instructions for altering the magnification of the whole image displayed on the display device. The image processor section displays new first markers of the same size as the first markers placed on the unaltered magnification whole image such that the new first markers are placed on the altered magnification whole image. The image processor section causes new second markers of the same size as the second markers placed on the unaltered magnification whole image to be placed on the altered magnification whole image.

There is provided a primary beam scanning apparatus capable of producing data having a bit depth higher than the resolution of an analog-to-digital converter. The primary beam scanning apparatus is capable of controlling a scan rate of a primary beam for scanning a specimen. The scanning apparatus includes a detector for detecting signals generated in response to irradiation of the specimen with the primary beam and providing an analog output signal, an analog-to-digital converter for sampling the analog signal and converting it into a digital signal, and an arithmetic section for averaging the digital signal.