The invention relates to a method for analyzing an analogue signal comprising randomly spaced events having an event height. The method includes irradiating a sample with a focused beam of energetic electrons, detecting emission from the sample in response to such irradiation, and converting an analog signal of the emissions to a stationary time signal. The method further includes determining an estimated noise contribution for the stationary time signal, and determining an estimated event height of an event based on the stationary time signal and the estimated noise contribution for the stationary time signal, and determining, based on the estimated event height, an energy of the emission detected by the detector. This method is particularly useful for X-ray detectors, such as Silicon Drift Detectors, used in a SEM. By estimating the noise contribution to the signal, the step height is estimated with improved accuracy.

Provided herein are portable ultraviolet (UV) devices, systems, and methods of use and manufacturing same. Methods of use include methods for UV disinfection and sterilization, more specifically, methods for UV disinfection and sterilization of a container, a room, a space or a defined environment. The portable UV devices, systems and methods are particularly useful for the UV disinfection and sterilization of a container, a room, a space or defined environment used in various industries. Provided are also portable UV devices, systems, and methods for inhibiting the growth of one or more species of microorganisms present in a container, a room, a space or a defined environment, preferably for inhibiting the growth of one or more species of microorganisms present on an interior surface of a container, a room, a space or a defined environment.

The embodiments disclosed herein can enable a target on a semiconductor wafer to be reconstructed and/or imaged. A surface of a target on a semiconductor wafer is measured using a wafer metrology tool. A voxel map of the surface is fixed to match geometry measurements and using scattering density of expected materials. Uniform scaling of the scattering density of all fixed surface voxels can occur.

A microscope system includes a microscope with at least one microscope sensor. Each microscope sensor has a measurement device for recording sample signals; an analog-to-digital converter for converting recorded sample signals to digital data; a data compression device which produces a compressed data stream from the digital data; and a data output interface, which outputs the compressed data stream and a raw data stream that comprises digital data that were not compressed. The microscope system additionally includes a user computer to which the compressed data stream is transmitted and also a data memory to which the raw data stream is transmitted. The user computer calculates real-time images from the compressed data stream and reads and processes the raw data stream from the data memory for subsequent data analysis. In addition, a method for operating such a microscope system is described.

A scanning electron microscope includes a first detector for detecting electrons, a second detector for detecting X-rays, and an image processor section for causing first markers indicative of imaging positions and second markers indicative of analysis positions to be displayed on a display device such that the first and second markers are placed on a whole image of a sample. The image processor section alters the magnification of the whole image based on instructions for altering the magnification of the whole image displayed on the display device. The image processor section displays new first markers of the same size as the first markers placed on the unaltered magnification whole image such that the new first markers are placed on the altered magnification whole image. The image processor section causes new second markers of the same size as the second markers placed on the unaltered magnification whole image to be placed on the altered magnification whole image.

A method of operating a charged particle microscope comprising: Providing a specimen on a specimen holder; Using a source to produce a beam of charged particles, and irradiating the specimen with said beam; Using a detector to detect X-ray radiation emanating from the specimen in response to said irradiation, and to produce a spectrum comprising X-ray characteristic peaks on a Bremsstrahlung background, comprising the following additional steps: Using an elemental decomposition algorithm to analyze the characteristic peaks in said spectrum, thereby determining a reference group of major chemical elements contributing to the spectrum; Calculating an average atomic number for said reference group, and using this in a predictive model to generate a calculated Bremsstrahlung profile for the reference group; Fitting said calculated Bremsstrahlung profile to the Bremsstrahlung background in said spectrum, and attributing a discrepancy between the latter and the former to a residual element absent from, or incorrectly quantified in, said reference group.

The present invention is to provide an electron microscope capable of being activated to an appropriate temperature by disposing an NEG at an extraction electrode around an electron source. The present invention is an electron microscope provided with an electron gun, in which the electron gun includes an electron source, an extraction electrode, and an accelerating tube, the accelerating tube is connected to the extraction electrode at a connection portion, the extraction electrode includes a first heater and a first NEG, and the first heater and the first NEG are spaced apart in an axial direction of an electron beam emitted from the electron source.

There is provided a primary beam scanning apparatus capable of producing data having a bit depth higher than the resolution of an analog-to-digital converter. The primary beam scanning apparatus is capable of controlling a scan rate of a primary beam for scanning a specimen. The scanning apparatus includes a detector for detecting signals generated in response to irradiation of the specimen with the primary beam and providing an analog output signal, an analog-to-digital converter for sampling the analog signal and converting it into a digital signal, and an arithmetic section for averaging the digital signal.

The embodiments disclosed herein can enable a target on a semiconductor wafer to be reconstructed and/or imaged. A surface of a target on a semiconductor wafer is measured using a wafer metrology tool. A voxel map of the surface is fixed to match geometry measurements and using scattering density of expected materials. Uniform scaling of the scattering density of all fixed surface voxels can occur.

There is provided a crystal orientation figure creating device for use in a charged particle beam device for making a charged particle beam irradiated to a surface of a sample, the crystal orientation figure creating device being configured to create a crystal orientation figure, which is a figure representing a crystal coordinate system of a crystal at a position selected on the surface with respect to an incident direction of the charged particle beam, the crystal orientation figure creating device including: an orientation information acquiring unit configured to acquire crystal orientation information with respect to the incident direction at the selected position; an incident direction information acquiring unit configured to acquire information relating to an incident direction of the charged particle beam with respect to the sample; and a crystal orientation figure creating unit configured to create a crystal orientation figure in a changed incident direction at the selected position, based on the crystal orientation information acquired by the orientation information acquiring unit, and the information relating to the incident direction at the time when the crystal orientation information is acquired and the information relating to the changed incident direction, acquired by the incident direction information acquiring unit.