A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask.

This composite charged particle beam device comprises a first charged particle beam column (6), a second charged particle beam column (1) which is equipped with a deceleration system, and is equipped with a detector (3) inside the column, a test piece stage (10) on which a test piece (9) is placed, and an electric field correction electrode (13) which is provided around the tip of the first charged particle beam column, wherein the electric field correction electrode is an electrode that corrects the electric field distribution formed in the vicinity of the test piece, and the electric field correction electrode is positioned between the test piece and the first charged particle beam column, and on the opposite side from the second charged particle beam column with respect to the optical axis of the first charged particle beam column.

A method of imaging an object in a first material having a different charge density to the object is provided, the method comprising: focusing a charged particle beam to a virtual charged particle beam source in the first material; moving the virtual charged particle beam source in and around the object to provide at least one charged particle reflected object beam or at least one charged particle refracted object beam and at least one charged particle bypass beam, wherein the charged particle reflected object beam or the charged particle refracted object beam and the charged particle bypass beam intercept one another to form an interference zone; and defocusing the interference zone to provide a Fresnel fringe, the Fresnel fringe forming an image of the object; or focusing the virtual charged particle beam source on the object to provide a first lower energy charged particle beam and a second lower energy charged particle beam, wherein the first lower energy charged particle beam and the second lower energy charged particle beam intercept one another to form a self-interference zone; defocusing the self-interference zone to provide a Fresnel fringe, the Fresnel fringe forming an image of the object.

A scanning microscope includes: a charged particle beam source configured to output a charged particle beam to be emitted to a sample; a detector configured to detect charged particles from the sample; and a controller configured to control the charged particle beam source and the detector, wherein the controller changes one or more variable parameters to determine a plurality of different parameter value sets, acquires a measurement result of a temporal change of absorption current in a target sample material under each of the plurality of different parameter value sets, and, based on the measurement results, selects a parameter value set for use in measurement of the target sample from the plurality of different parameter value sets.

A system and method for controlling an ion implantation system as a function of sampling ion beam current and uniformity thereof. The ion implantation system includes a plurality of ion beam optical elements configured to selectively steer and/or shape the ion beam as it is transported toward a workpiece, wherein the ion beam is sampled at a high frequency to provide a plurality of ion beam current samples, which are then analyzed to detect fluctuations and/or nonuniformities or unpredicted variations amongst the plurality of ion beam current samples. Beam current samples are compared against predetermined threshold levels, and/or predicted nonuniformity levels to generate a control signal when a detected nonuniformity in the plurality of ion beam current density samples exceeds a predetermined threshold. A control system can be configured to generate a control signal for interlocking the ion beam transport in the ion implantation system or for varying an input to at least one beam optical element to control variations in beam current.

This composite charged particle beam device comprises a first charged particle beam column (6), a second charged particle beam column (1) which is equipped with a deceleration system, and is equipped with a detector (3) inside the column, a test piece stage (10) on which a test piece (9) is placed, and an electric field correction electrode (13) which is provided around the tip of the first charged particle beam column, wherein the electric field correction electrode is an electrode that corrects the electric field distribution formed in the vicinity of the test piece, and the electric field correction electrode is positioned between the test piece and the first charged particle beam column, and on the opposite side from the second charged particle beam column with respect to the optical axis of the first charged particle beam column.

An ion implantation system measurement system has a scan arm that rotates about an axis and a workpiece support to translate a workpiece through the ion beam. A first measurement component downstream of the scan arm provides a first signal from the ion beam. A second measurement component with a mask is coupled to the scan arm to provide a second signal from the ion beam with the rotation of the scan arm. The mask permits varying amounts of the ion radiation from the ion beam to enter a Faraday cup based on an angular orientation between the mask and the ion beam. A blocking plate selectively blocks the ion beam to the first faraday based on the rotation of the scan arm. A controller determines an angle and vertical size of the ion beam based on the first signal, second signal, and orientation between the mask and ion beam as the second measurement component rotates.

Systems and methods for arc handling in plasma processing operations are disclosed. The method includes providing current with a power supply to a plasma load at a first voltage polarity and energizing an energy storage device so when it is energized, the energy storage device applies a reverse polarity voltage that has a magnitude that is as least as great as the first voltage polarity. When an arc is detected, power is applied from the energy storage device to the plasma load with a reverse polarity voltage that has a polarity that is opposite of the first voltage polarity, the application of the reverse polarity voltage to the plasma load decreases a level of the current that is provided to the plasma load.

Systems and methods for arc handling in plasma processing operations are disclosed. The method includes providing current with a power supply to a plasma load at a first voltage polarity and energizing an energy storage device so when it is energized, the energy storage device applies a reverse polarity voltage that has a magnitude that is as least as great as the first voltage polarity. When an arc is detected, power is applied from the energy storage device to the plasma load with a reverse polarity voltage that has a polarity that is opposite of the first voltage polarity, the application of the reverse polarity voltage to the plasma load decreases a level of the current that is provided to the plasma load.

Embodiments disclosed herein include a processing tool for measuring neutral radical concentrations. In an embodiment, the processing tool comprises a processing chamber, and a neutral radical mass spectrometry (NRMS) analyzer fluidically coupled to the processing chamber. In an embodiment, the NRMS analyzer comprises a first chamber fluidically coupled to the processing chamber, where the first chamber comprises a modulator, and a second chamber fluidically coupled to the first chamber, where the second chamber is a residual gas analyzer or a mass spectrometer. In an embodiment, an unobstructed line of sight passes from the processing chamber to the second chamber.