A liquid sample carrier includes a first base that includes a first carrying portion having a first sample holding surface, and a second base that is connectable to the first base and that includes a second carrying portion, a support layer, and a second sample holding surface. The second carrying portion is stackable on the first carrying portion, and has a surrounding wall defining a through hole. The support layer is connected to the second carrying portion and has a window area corresponding to the through hole, and a peripheral area surrounding the window area. The second sample holding surface is connected to the support layer. A sample receiving area is formed between the first and second sample holding surfaces.

An object of the present invention is to provide a charged particle beam device that suppresses the influence of an external electromagnetic wave, even when a shielding member, such as a vacuum valve, is in the open state. To achieve the above object, a charged particle beam device including a vacuum chamber (111) having an opening (104) that surrounds a sample delivery path is proposed. The charged particle beam device includes a conductive material (118) surrounding the opening (104) for conduction between the vacuum chamber (111) and a conductive member (106) disposed on the atmosphere side. According to an embodiment of the present invention, it is possible to restrict an electromagnetic wave (117) from reaching the sample chamber via the delivery path.

A detector includes a semiconductor layer included in a detection region and a peripheral region, and having a first surface and a second surface opposite to the first surface, and a wiring structure included in at least the detection region, and disposed between a space on the first surface side with respect to the semiconductor layer and a space on the second surface side with respect to the semiconductor layer, wherein a thickness of the semiconductor layer in at least a part of the detection region is smaller than a thickness of the peripheral region including the semiconductor layer, and the thickness of the semiconductor layer is larger than a distance between the first surface in the detection region and the space on the first surface side, and a distance between the second surface in the detection region and the space on the second surface side.

An object of the present invention is to provide a charged particle beam device capable of correcting an image drift caused by stage deformation or the like during imaging immediately after stage movement. In order to achieve the above object, proposed is a charged particle beam device including: a sample chamber; a sample stage arranged in the sample chamber; a charged particle beam source which releases a charged particle beam; a deflector which deflects the charged particle beam released from the charged particle beam source; a focusing lens which focuses the charged particle beam; and a control device that controls the sample stage and the deflector, in which the control device calculates a deflection signal to be supplied to the deflector based on a thrust information when driving of the sample stage and a coefficient assigned for each position of the sample stage.

The purpose of the present disclosure is to provide a high-voltage insulating structure capable of reducing an electric field around a conductor to which a high voltage is applied. In this high-voltage insulating structure, an electrically conductive part, to which a high voltage is applied and which extends in an axial direction, is surrounded by an insulator, wherein the insulator comprises a first insulator 105, a second insulator 203 positioned on the opposite side from the first insulator in the axial direction, and a third insulator 205 positioned between the first and second insulators. The electrical resistivity of the third insulator 205 is smaller than the electrical resistivities of the first and second insulators. As for the thickness of the third insulator 205 in the axial direction, a first thickness at the outer side farther from the electrically conductive part is less than a second thickness at the inner side closer to the electrically conductive part.

A method to, is provided for collecting an image from a sample. The method includes selecting a radiation level for a first probe to meet a desired radiation dosage, and providing, with the first probe, a radiation at a selected point within a region of the sample. The method includes identifying a second selected point within the region of the sample based on a down sampling scheme, and providing a second radiation amount at the second selected point within the region of the sample. The method also includes interpolating a first datum and a second datum based on an up sampling scheme to obtain a plurality of data, and forming an image of the region of the sample with the plurality of data. A system to perform the above method and including the first probe is also provided.

Disclosed herein is an image sensor comprising: a plurality of packages arranged in a plurality of layers; wherein each of the packages comprises an X-ray detector mounted on a printed circuit board (PCB); wherein the packages are mounted on one or more system PCBs; wherein within an area encompassing a plurality of the X-ray detectors in the plurality of packages, a dead zone of the packages in each of the plurality of layers is shadowed by the packages in the other layers.

A sample stage includes a sample holder that accommodates a sample and a first drive module, a second drive module, and a third drive module that are radially connected to the sample holder and allow the sample holder to have translational degrees of freedom in three directions and rotational degrees of freedom in at least two directions.

The invention relates to a photon detector (10), in particular an x-ray detector, in the form of a measurement finger, which extends along a detector axis (23) and has a detector head (11) at a first end of the measurement finger, wherein the detector head (11) comprises a plurality of at least two detector modules (22), each comprising a sensor chip (12) sensitive to photon radiation (14), in particular x-radiation, said sensor chip having an exposed end face (13) and a face facing away from the end face (13), wherein the detector modules (22) are arranged around the detector axis (23) in a plane (24) extending orthogonally to the detector axis (23).

A method of electron microscopy imaging of samples, using an electron microscope (100) having a microscope column (10) and a transfer device (11) with a grid carriage (12), comprises the steps of preparing multiple samples (1) on a single electron microscopy grid (2), including dispensing the samples (1) with a dispenser device (30) on distinct positions on the grid (2), introducing the grid (1) with the transfer device (11) into the microscope column (10), and electron microscopy imaging of the samples (1), wherein the preparing step includes holding the grid (2) on the grid carriage (12) of the transfer device (11) or on a grid holder device (20) provided at the electron microscope (100) and dispensing the samples (1) on the grid (2) while holding it on the grid carriage (12) or on the grid holder device (20). Furthermore, an electron microscope (100) for electron microscopy imaging of samples is described.