Electron Energy Loss Spectrometer including a correction circuit for fundamental and third harmonic line noise is described. Various circuits for creating the correction signals are also described. A method of correcting for fundamental and third harmonic line noise is also described.

An e-beam apparatus is disclosed, the tool comprising an electron optics system configured to project an e-beam onto an object, an object table to hold the object, and a positioning device configured to move the object table relative to the electron optics system. The positioning device comprises a short stroke stage configured to move the object table relative to the electron optics system and a long stroke stage configured to move the short stroke stage relative to the electron optics system. The e-beam apparatus further comprises a magnetic shield to shield the electron optics system from a magnetic disturbance generated by the positioning device. The magnetic shield may be arranged between the positioning device and the electron optics system.

In order to provide an aberration correction system that realizes a charged particle beam of which the anisotropy is reduced or eliminated on a sample surface even in the case where there is magnetic interference between pole stages of an aberration corrector, an correction system includes a line cross position control device (209) which controls a line cross position in the aberration corrector of the charged particle beam so that a designed value and an actually measured value of the line cross position are equal to each other, an image shift amount extraction device (210), and a feedback determination device (211) which determines whether or not changing an excitation amount of the aberration corrector is necessary whether or not changing an excitation amount is necessary from an extracted image shift amount.

The purpose of the present invention is to provide a charged particle radiation device capable of performing appropriate vibration suppression control in accordance with a device condition. To achieve the purpose, proposed is a charged particle radiation device provided with: a sample stage for supporting a sample irradiated with a charged particle beam emitted from a charged particle source; and a vacuum chamber for placing the atmosphere in which the sample is disposed in a vacuum state. The charged particle radiation device is provided with: a sensor for detecting vibrations transmitted to the charged particle radiation device; a vibration addition mechanism for vibrating the charged particle radiation device; and a control device for performing feedback control for the vibration addition mechanism in accordance with detection by the sensor, wherein the control device changes a feedback gain of the feedback control in accordance with the type of instruction in a control sequence of the charged particle radiation device.

Methods and systems for determining one or more characteristics for defects detected on a specimen are provided. One system includes one or more computer subsystems configured for identifying a first defect that was detected on a specimen by an inspection system with a first mode but was not detected with one or more other modes. The computer subsystem(s) are also configured for acquiring, from the storage medium, one or more images generated with the one or more other modes at a location on the specimen corresponding to the first defect. In addition, the computer subsystem(s) are configured for determining one or more characteristics of the acquired one or more images and determining one or more characteristics of the first defect based on the one or more characteristics of the acquired one or more images.

The present invention is to provide an electron microscope capable of being activated to an appropriate temperature by disposing an NEG at an extraction electrode around an electron source. The present invention is an electron microscope provided with an electron gun, in which the electron gun includes an electron source, an extraction electrode, and an accelerating tube, the accelerating tube is connected to the extraction electrode at a connection portion, the extraction electrode includes a first heater and a first NEG, and the first heater and the first NEG are spaced apart in an axial direction of an electron beam emitted from the electron source.

A sample chip for electron microscope includes a first substrate having a film layer, a buffer layer, and a body layer, a spacing layer positioned below the first substrate, and a second substrate positioned below the spacing layer. The buffer layer is positioned on the film layer and has a buffer opening corresponding to an area of the film layer, the body layer is positioned on the buffer layer and has a body opening corresponding to the buffer opening of the buffer layer to expose the area of the film layer corresponding to the buffer opening, the body layer has a thickness of 10 m-800 m, and etching properties of the film layer, the buffer layer, and the body layer are different. A specimen accommodating space is defined in the spacing layer to correspond to the area of the film layer corresponding to the buffer opening.

A Wien filter to be disposed inside a lens barrel made of a magnetic material includes: a plurality of electromagnetic poles disposed at equal angular intervals about a center axis of the lens barrel; a first magnetic shield disposed so as to cover the area around the plurality of electromagnetic poles; and a second magnetic shield disposed so as to cover the area around the first magnetic shield. The first magnetic shield is supported by a first support member made of a non-magnetic material provided at an inner surface of the second magnetic shield. The second magnetic shield is supported by a second support member made of a magnetic material provided at an inner surface of the lens barrel.

The invention relates to an aberration correcting device for correcting aberrations of focusing lenses in an electron microscope. The device comprises a first and a second electron mirror, each comprising an electron beam reflecting face. Between said mirrors an intermediate space is arranged. The intermediate space comprises an input side and an exit side. The first and second electron mirrors are arranged at opposite sides of the intermediate space, wherein the reflective face of the first and second mirror are arranged facing said intermediate space. The first mirror is arranged at the exit side and the second mirror is arranged at the input side of the intermediate space. In use, the first mirror receives the electron beam coming from the input side and reflects said beam via the intermediate space towards the second mirror. The second mirror receives the electron beam coming from the first mirror, and reflects the electron beam via the intermediate space towards the exit side. The incoming electron beam passes said second mirror at a position spaced apart from the reflection position on the second mirror. At least one of the electron mirrors is arranged to provide a correcting aberration to a reflected electron beam.

An automated workpiece processing apparatus including a processing section including a processing module configured for processing a workpiece at a process location, a transport module including a first shuttle stage, a second shuttle stage independent of the first stage, and an end effector connected to at least one of the first and second stages, the end effector being configured to hold and transport the workpiece into and out of the processing module, and having a range of motion, defined by a combination of the first and second stage, extending from a workpiece holding station outside the processing module to the processing location inside the processing module so the end effector defines a processing stage of the processing module, and an automated loading and transport section including a load port module through which workpieces are loaded into the automated loading and transport section, and being communicably connected to the transport module.